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Application of tungsten oxide-vanadium oxide heterojunction nanowire array as gas sensitive material

A technology of tungsten oxide nanowires and nanowire arrays, which is applied in the analysis of materials, material analysis through electromagnetic means, coupling of optical waveguides, etc., can solve the problems that cannot meet the requirements of marketization and integrated applications, and achieve process parameters Easy to control, convenient to operate, improve the effect of sensitivity and response speed

Inactive Publication Date: 2016-02-10
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The experimental results prove that the one-dimensional nanowire structure of tungsten oxide does improve the sensitivity of gas detection, but this still cannot meet the requirements of marketization and integrated applications

Method used

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  • Application of tungsten oxide-vanadium oxide heterojunction nanowire array as gas sensitive material
  • Application of tungsten oxide-vanadium oxide heterojunction nanowire array as gas sensitive material
  • Application of tungsten oxide-vanadium oxide heterojunction nanowire array as gas sensitive material

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Experimental program
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Effect test

Embodiment 1

[0034] Step 1. Deposit a tungsten thin film material layer on the single-sided polished silicon wafer of the substrate by magnetron sputtering on the target. Metal tungsten is used as the target material, argon is used as the sputtering gas, the working pressure of the sputtering is 2.0Pa, and the sputtering power 80W, sputtering time is 20min;

[0035] Step 2: Crystallize and grow tungsten oxide nanowires on the tungsten film prepared in step 1 in a vacuum high-temperature tube furnace. The ambient atmosphere is a mixed gas of oxygen and argon. During the growth process of tungsten oxide nanowires, oxygen and argon are controlled The flow rate is 0.1sccm and 35sccm respectively, the growth pressure in the furnace is controlled to be 140Pa, the tube furnace is raised from room temperature 25 degrees Celsius to 700 degrees Celsius, the heating rate is 5 degrees Celsius / min, the temperature is kept at 700 degrees Celsius for 1 hour, and then the temperature is lowered to 400 degr...

Embodiment 2

[0040] Step 1: Deposit a tungsten thin film material layer on the single-sided polished silicon wafer of the substrate by magnetron sputtering on the target, use metal tungsten as the target material, use argon as the sputtering gas, and the sputtering working pressure is 1.0Pa, and the sputtering power 80W, sputtering time is 20min;

[0041] Step 2: Crystallize and grow tungsten oxide nanowires on the tungsten film prepared in step 1 in a vacuum high-temperature tube furnace. The ambient atmosphere is a mixed gas of oxygen and argon. During the growth process of tungsten oxide nanowires, oxygen and argon are controlled The flow rate is 0.1sccm and 50sccm respectively, the growth pressure in the furnace is controlled to be 150Pa, the tube furnace is raised from room temperature 25 degrees Celsius to 600 degrees Celsius, the heating rate is 5 degrees Celsius / min, the temperature is kept at 600 degrees Celsius for 1.5 hours, and then the temperature is lowered to 350 degrees Cels...

Embodiment 3

[0046] Step 1: Deposit a tungsten film material layer on the base alumina ceramic sheet by magnetron sputtering on the target, use metal tungsten as the target material, use argon as the sputtering gas, the sputtering working pressure is 2.0Pa, and the sputtering power is 80W , the sputtering time is 20min;

[0047] Step 2: Crystallize and grow tungsten oxide nanowires on the tungsten film prepared in step 1 in a vacuum high-temperature tube furnace. The ambient atmosphere is a mixed gas of oxygen and argon. During the growth process of tungsten oxide nanowires, oxygen and argon are controlled The flow rate is 0.1sccm and 40sccm respectively, the growth pressure in the furnace is controlled to be 160Pa, the tube furnace is raised from room temperature 20 degrees Celsius to 650 degrees Celsius, the heating rate is 5 degrees Celsius / min, the temperature is kept at 650 degrees Celsius for 2 hours, and then the temperature is lowered to 300 degrees Celsius for 1 hour. Finally, nat...

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Abstract

The invention discloses application of a tungsten oxide-vanadium oxide heterojunction nanowire array as a gas sensitive material. The application is characterized in that the oxide-vanadium oxide heterojunction nanowire array comprises oxide-vanadium oxide heterojunction nanowires which are 300 to 800 nm in length; the diameters of tungsten oxide nanowires are 10 to 20 nm; the tungsten oxide nanowires are uniformly wrapped by vanadium oxide which is 20 to 30 nm thick; tungsten oxide and vanadium oxide form a coaxial core-shell heterostructure; the tungsten oxide-vanadium oxide heterojunction nanowire array is applied to detection of nitrogen dioxide gas at room temperature. The application has the advantages that the response sensitivity, to nitrogen dioxide gas of a 5-ppm level, of the tungsten oxide-vanadium oxide heterojunction nanowire array is 7 to 9 times of that of pure tungsten oxide nanowires; the response time is shorter than 3 seconds.

Description

[0001] The application of the present invention is a divisional application of the parent application "a tungsten oxide / vanadium oxide heterojunction nanoarray and its preparation method". The application number of the parent application is 2014106197649, and the filing date of the parent application is November 2014 5th. technical field [0002] The invention belongs to the field of preparation of functional materials, and more specifically relates to the application of a tungsten oxide / vanadium oxide heterojunction nanowire array in detecting nitrogen dioxide. Background technique [0003] In the 21st century, the level of industrialization has developed rapidly, but the natural environment and ecology that human beings depend on have been severely damaged, and there are a lot of toxic and harmful gases (such as NO 2 , NO, H 2 S, CO, SO 2 and many more). Toxic gases such as NOx can form acid rain to corrode buildings and skin, and can also produce chemical smog, which c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00B81B7/04
Inventor 秦玉香柳杨谢威威刘成胡明
Owner TIANJIN UNIV