Semiconductor element and preparation method thereof

Abstract

The invention provides a semiconductor element. Formation of an amorphous layer on the surface of a silicon substrate can be avoided by growth of a metal protection layer and a metal oxide protection layer on the substrate; and crystal lattice difference of the metal oxide protection layer and a III-IV family buffer layer is reduced by a transition layer so that crystal quality of the III-IV family buffer layer is enhanced. The invention also provides a preparation method. Formation of the amorphous layer near the interface of the silicon substrate can be avoided by the method, and generation of cracks can be avoided. Meanwhile, a high-quality multilayer buffer structure deposited by a PVD method, and a gallium nitride or indium gallium nitrogen or aluminum gallium nitride epitaxial layer grown on the high-quality multilayer buffer structure are fully utilized to manufacture a light-emitting diode element or a transistor element.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a semiconductor element and a preparation method thereof. Background technique [0002] The physical vapor deposition method (PVD method) has the characteristics of simple process, less environmental pollution, less raw material consumption, uniform and dense film formation, and strong bonding with the substrate. It is currently being increasingly used in the preparation of semiconductor components. Among them, it is usually used for the preparation of the bottom layer, such as depositing an aluminum nitride layer as a buffer layer, which can reduce and buffer defects and stresses caused by lattice mismatch and thermal mismatch between the substrate and the epitaxial layer, and improve semiconductor performance. Component quality. [0003] Compared with chemical vapor deposition, the atoms sputtered by PVD method have higher energy (generally 10~20eV) and stronger migrati...

AI Technical Summary

Problems solved by technology

However, at present, the physical vapor deposition method is used to directly grow aluminum nitride on the surface of silicon substrates, and it is easy to form an amorphous silicon oxide layer at the interface between the substrate and aluminum nitride, resulting in the deterioration of the quality of the subsequently formed aluminum nitride layer, resulting in the following Problem: The aluminum nitride layer is used as a stress buffer layer, and its ability to release stress is inconsistent, and the stress is concentrated on the amorphous silicon nitride layer on the interface, which is easy to cause cracks and destroy the quality of the entire semiconductor device; the aluminum nitride layer The densification becomes poor, and pores are formed. Then, when the gallium-containing nitride is deposited in the chemical vapor phase, the gallium element directly corrodes the silicon substrate through the pores, forming pits, and destroying the performance of the entire semiconductor device.

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