Germanium antimony selenium infrared glass with antireflection film and preparation method thereof

A technology of infrared glass and anti-reflection film, which is applied to optical components, optics, instruments, etc., can solve the problems of excessive film material, film layer shedding, and great difference in physical and chemical properties, and meet the requirements of transmission and low residual reflectivity , good adhesion effect

Active Publication Date: 2017-06-23
CHINA BUILDING MATERIALS ACAD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But this film system exists to adopt too much film material, the shortcomings such as number of layers and thickness are large; In addition, GASIR1 infrared glass is a Ge-As-Se system, which is different from germanium antimony selenium infrared glass in physical and chemical properties, and the film system structure and preparation method are different. Suitable for germanium antimony selenium infrared glass
Compared with infrared crystal materials such as germanium, germanium antimony selenium infrared glass has a low transition temperature, high brittleness, and poor physical and chemical properties. The film layer prepared by conventional film layer preparation technology is prone to problems such as film layer peeling
The physical and chemical properties of germanium antimony selenium infrared glass and Ge-As-Se system and its elemental germanium are very different. Report on Antireflection of Selenium Infrared Glass

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Germanium antimony selenium infrared glass with antireflection film and preparation method thereof
  • Germanium antimony selenium infrared glass with antireflection film and preparation method thereof
  • Germanium antimony selenium infrared glass with antireflection film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The preparation method of the germanium antimony selenium infrared glass with antireflection coating comprises the following steps:

[0038] (1) Cleaning and preheating: Ultrasonic cleaning is performed on the infrared glass substrate with a mixture of acetone and alcohol ether, the cleaning time is 15 minutes each, and finally, the substrate is dried in an oven; after drying, quickly clamp the substrate Place in a vacuum chamber and draw a vacuum. Vacuum up to 5.0×10 -3 pa, adjust the output voltage of the baking lamp, the heating rate is: room temperature -60°C, 30min, 60°C-100°C, 30min, after reaching the temperature, keep warm for 1.2h.

[0039] What needs to be explained here is that germanium antimony selenium infrared glass is a brittle material, and gradient heating can prevent glass breakage caused by drastic temperature changes.

[0040] (2) Ion-assisted cleaning, turn on the ion source, fill the volume of argon gas with 35 sccm, and the pressure of the vacu...

Embodiment 2

[0053] The infrared glass substrates were ultrasonically cleaned with acetone and alcohol ether mixtures for 13 minutes and 16 minutes respectively, and finally, the substrates were dried in an oven.

[0054] After the drying is completed, the quick clamping substrate is put into the vacuum chamber, and the vacuum is drawn; the vacuum reaches 8.0×10 -3 pa, adjust the output voltage of the baking lamp, and the heating rate is: room temperature-60°C, 30min, 60°C-120°C, 40min; after reaching the temperature, keep warm for 1.5 hours.

[0055] Filled with argon gas 40sccm, the pressure of the vacuum chamber is 8.0×10 -3 pa, turn on the ion source, and adjust the ion source parameters as follows: anode voltage 100V, anode current 2A, workpiece disk rotation speed 10rpm.

[0056] Plating the first YbF 3 film, the vacuum chamber pressure during evaporation is 1.0×10 -2 pa, the deposition rate is 0.15nm / s, the crystal oscillator is used to control the deposition rate, the deposition...

Embodiment 3

[0065] The infrared glass substrates were ultrasonically cleaned with acetone and alcohol ether mixtures for 18 minutes and 12 minutes respectively, and finally, the substrates were dried in an oven.

[0066] After the drying is completed, the quick clamping substrate is put into the vacuum chamber, and the vacuum is drawn; the vacuum reaches 1.0×10 -2 pa, adjust the output voltage of the baking lamp, and the heating rate is: room temperature-60°C, 30min, 60°C-120°C, 40min; after reaching the temperature, keep warm for 1.5 hours.

[0067] Filled with argon gas 40sccm, the pressure of the vacuum chamber is 2.0×10 -2 pa, turn on the ion source, and adjust the ion source parameters as follows: anode voltage 150V, anode current 1A, workpiece disk rotation speed 20rpm.

[0068] Plating the first YbF 3 film, the vacuum chamber pressure during evaporation is 2.0×10 -2 pa, the deposition rate is 0.15nm / s, the deposition rate is controlled by a crystal oscillator, the deposition opt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses Ge-As-Se infrared glass with an anti-reflection film and a preparation method thereof. The Ge-As-Se infrared glass with the anti-reflection film comprises a Ge-As-Se infrared glass base layer, the Ge-As-Se infrared glass base layer is composed of 12% of Ge, 28% of As and 60% of Se by weight, and a first ytterbium fluoride layer, a first zinc sulfide layer, a second ytterbium fluoride layer and a second zinc sulfide layer are deposited on the Ge-As-Se infrared glass base layer successively. The Ge-As-Se infrared glass of the invention can effectively prevent the anti-reflection film from falloff, and the reflectivity of the infrared glass is reduced.

Description

technical field [0001] The invention relates to the field of glass processing, in particular to a germanium-antimony-selenide infrared glass with an antireflection film and a preparation method thereof. Background technique [0002] Germanium antimony selenium infrared glass is a class of infrared optical materials with excellent performance, but its high brittleness and high residual reflectivity on the surface cannot be used directly. [0003] The commonly used means of reducing the reflectivity of glass material at present is to coat anti-reflection film on the surface of glass material, and patent CN104459835A has introduced a kind of infrared glass GASIR1 anti-reflection film, and it adopts 4 kinds of film materials, and the number of film layers is 13 ± 2 layers, total The thickness reaches 4000±200nm, and the residual reflectance of the surface can be reduced to less than 1% after design. [0004] But this film system exists to adopt too much film material, the short...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/115
CPCG02B1/115
Inventor 金扬利祖成奎赵华刘永华韩滨赵慧峰王衍行陈江何坤
Owner CHINA BUILDING MATERIALS ACAD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap