Poly(aryl ether ketone) resin with main chain containing polyhedral oligomeric silsesquioxane double-deck structure, and preparation method thereof

A technology of silsesquioxane and polyaryletherketone, which is applied in the field of low-dielectric hydrophobic polyaryletherketone resin and its preparation, can solve the problems of limited application, poor hydrophobicity and dielectric constant, etc., and achieve simple synthesis route, Excellent overall performance and broad application prospects

Active Publication Date: 2016-03-16
重庆沃特智华新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional polyaryletherketone resin is difficult to dissolve in common organic solvents due to its high crystallinity, and at the same time, its hydrophobicity is poor and the dielectric constant needs to be further improved, thus limiting its application in the field of microelectronics

Method used

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  • Poly(aryl ether ketone) resin with main chain containing polyhedral oligomeric silsesquioxane double-deck structure, and preparation method thereof
  • Poly(aryl ether ketone) resin with main chain containing polyhedral oligomeric silsesquioxane double-deck structure, and preparation method thereof
  • Poly(aryl ether ketone) resin with main chain containing polyhedral oligomeric silsesquioxane double-deck structure, and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Under nitrogen protection, add 1.4822g (0.001mol) 2OH-DDSQ, 0.2182g (0.001mol) 4,4′-difluorobenzophenone and 0.166g (0.0012mol) potassium carbonate, 6.8mL sulfolane as solvent, and 3.4mL toluene as water-carrying agent. Raise the temperature to 140°C, and react with water to form a salt for 3 hours. Sequentially raise the temperature to 170°C, react at 190°C and 220°C for 2 hours each, and then precipitate out in deionized water. After pulverizing, wash 3 times with deionized water and methanol respectively, dry, then obtain the polyarylether ketone that main chain contains cage type silsesquioxane double plywood structure, product structural formula is shown in (1), and yield is 89.3%.

Embodiment 2

[0021] Under nitrogen protection, add 1.4822g (0.001mol) 2OH-DDSQ, 0.2182g (0.001mol) 4,4′-difluorobenzophenone and 0.166g (0.0012mol) potassium carbonate, 8.5mL sulfolane, and 4.3mL toluene are water-carrying agents. Raise the temperature to 140°C, and react with water to form a salt for 3 hours. Sequentially raise the temperature to 170°C, react at 190°C and 220°C for 2 hours each, and then precipitate out in deionized water. After pulverizing, wash 3 times with deionized water and methanol respectively, dry, then obtain the polyarylether ketone that main chain contains cage type silsesquioxane double plywood structure, product structural formula is shown in (1), and yield is 92.5%.

Embodiment 3

[0023] Under nitrogen protection, add 1.4822g (0.001mol) 2OH-DDSQ, 0.2182g (0.001mol) 4,4′-difluorobenzophenone and 0.138g (0.001mol) potassium carbonate, 8.5mL sulfolane, and 4.3mL toluene are water-carrying agents. Raise the temperature to 140°C, and react with water to form a salt for 3 hours. Sequentially raise the temperature to 170°C, react at 190°C and 220°C for 2 hours each, and then precipitate out in deionized water. After pulverizing, wash 3 times with deionized water and methanol respectively, dry, then obtain the polyarylether ketone that main chain contains cage type silsesquioxane double plywood structure, product structural formula is shown in (1), and yield is 87.2%.

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Abstract

The invention discloses a poly(aryl ether ketone) resin with a main chain containing a polyhedral oligomeric silsesquioxane double-deck structure, and a preparation method thereof, and belongs to the technical field of high molecular material. According to the invention, 3,13-di(2-methoxy-4-propylphenol) octaphenyl polyhedral oligomeric silsesquioxane is taken as a raw material, and is reacted with difluoroketone monomers such as 4,4'-difluoro diphenylmethanone, 1,4-(4-fluoro-benzoyl)-phenyl or 4,4'-(4-fluoro-benzoyl)-1,1'-biphenyl so as to prepare the low-dielectric constant hydrophobic poly(aryl ether ketone) resin with a main chain containing a polyhedral oligomeric silsesquioxane double-deck structure. Compared with conventional poly(aryl ether ketone), the poly(aryl ether ketone) resin with a main chain containing a polyhedral oligomeric silsesquioxane double-deck structure possesses following characteristics because of introduction of polyhedral oligomeric silsesquioxane that water contact angle is increased obviously, and the largest water contact angle can be 100 DEG, dielectric constant is reduced obviously, and the smallest dielectric constant can be 1.95. The synthetic route of the preparation method is simple; and the poly(aryl ether ketone) resin with a main chain containing a polyhedral oligomeric silsesquioxane double-deck structure possesses excellent hydrophobic performance and low dielectric constant, and is a high-molecular material with excellent comprehensive properties and a promising application prospect.

Description

technical field [0001] The invention belongs to the technical field of polymer materials, and in particular relates to a low-dielectric hydrophobic polyaryletherketone resin with a cage-type silsesquioxane double deck structure in the main chain and a preparation method thereof. Background technique [0002] Polyaryletherketone resin is a kind of high-performance special engineering plastics. Due to its excellent properties such as high strength, insulation, fatigue resistance, aging resistance, radiation resistance, and low water absorption, it is widely used in aerospace, electronics, automobiles, machinery and Medical and other fields. The traditional polyaryletherketone resin is difficult to dissolve in common organic solvents due to its high crystallinity, and at the same time, its hydrophobicity is poor and the dielectric constant needs to be further improved, thus limiting its application in the field of microelectronics. In recent years, the synthesis of new polyary...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G65/40C08G65/46
CPCC08G65/4068C08G65/46
Inventor 牟建新郝金梦魏艳凤姜蕲烊
Owner 重庆沃特智华新材料科技有限公司
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