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Cathode modification type plane perovskite solar cell and preparation method thereof

A solar cell and cathode modification technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as potential barrier difference and hinder the effective transmission of electrons, and achieve the effect of increasing open circuit voltage, promoting effective transmission and collection, and low cost.

Inactive Publication Date: 2016-03-16
HENAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cathode electrode of flat perovskite solar cells is generally silver and electron transport layer, and there is a large potential barrier difference between the electron transport layer and the silver electrode, which hinders the effective transport of electrons.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Preparation of the anode modification layer, spin-coat poly-3,4-ethylenedioxythiophene and polystyrene sulfonate (PEDOT:PSS) solution on the ITO conductive glass substrate, and spin at a speed of 4500rpm for 40s , and then annealed in air at 140°C for 20 minutes to form a uniform anode modification layer;

[0023] (2) Preparation of the perovskite layer. Dissolve methylamine iodide and lead chloride in N,N-dimethylformamide solvent at a molar ratio of 3:1, and stir for 5 hours to prepare perovskite with a mass concentration of 30%. Spin-coat the perovskite precursor solution on the anode modification layer, and then anneal at 100°C for 30 minutes to obtain a uniformly cured perovskite layer;

[0024] (3) Preparation of the electron transport layer, spin-coat the o-dichlorobenzene solution of [6,6]-phenyl-C61-butyric acid methyl ester on the perovskite layer, accelerate to 2000rpm and rotate for 40s to form a uniform Electron transport layer;

[0025] (4) Preparati...

Embodiment 2

[0028] (1) Preparation of the anode modification layer, spin-coat poly-3,4-ethylenedioxythiophene and polystyrene sulfonate (PEDOT:PSS) solution on the ITO conductive glass substrate, and spin at a speed of 4500rpm for 40s , and then annealed in air at 140°C for 20 minutes to form a uniform anode modification layer;

[0029] (2) Preparation of the perovskite layer. Dissolve methylamine iodide and lead chloride in N,N-dimethylformamide solvent at a molar ratio of 3:1, and stir for 5 hours to prepare perovskite with a mass concentration of 30%. Spin-coat the perovskite precursor solution on the anode modification layer, and then anneal at 100°C for 30 minutes to obtain a uniformly cured perovskite layer;

[0030] (3) Preparation of the electron transport layer, spin-coat the o-dichlorobenzene solution of [6,6]-phenyl-C61-butyric acid methyl ester on the perovskite layer, accelerate to 2000rpm and rotate for 40s to form a uniform Electron transport layer;

[0031] (4) Preparati...

Embodiment 3

[0034] (1) Preparation of the anode modification layer, spin-coat poly-3,4-ethylenedioxythiophene and polystyrene sulfonate (PEDOT:PSS) solution on the AZO conductive glass substrate, and spin at a speed of 4500rpm for 40s , and then annealed in air at 100°C for 30 minutes to form a uniform anode modification layer;

[0035] (2) Preparation of the perovskite layer. Dissolve methylamine iodide and lead chloride in N,N-dimethylformamide solvent at a molar ratio of 3:1, and stir for 5 hours to prepare perovskite with a mass concentration of 30%. Spin-coat the perovskite precursor solution on the anode modification layer, and then anneal at 100°C for 30 minutes to obtain a uniformly cured perovskite layer;

[0036] (3) Preparation of the electron transport layer, spin-coat the o-dichlorobenzene solution of [6,6]-phenyl-C61-butyric acid methyl ester on the perovskite layer, accelerate to 2000rpm and rotate for 40s to form a uniform Electron transport layer;

[0037] (4) Preparati...

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Abstract

The invention discloses a cathode modification type plane perovskite solar cell and a preparation method thereof, and belongs to the technical field of a plane perovskite solar cell. Key points of the technical scheme are in that the cathode modification type plane perovskite solar cell successively comprises a substrate, an anode modification layer, a perovskite layer, an electron transmission layer, a cathode modification layer and a cathode layer from bottom to top, and the material of the cathode modification layer is cesium carbonate or molybdenum trioxide doped cesium carbonate. The invention further discloses a preparation method of the cathode modification type plane perovskite solar cell. The cesium carbonate or the molybdenum trioxide doped cesium carbonate is adopted to be taken as the cathode modification layer, a contact potential barrier between a cathode and the electron transmission layer is reduced to some extent, series resistance is reduced, a filling factor and an open-circuit voltage are improved to a great extent, and energy conversion efficiency is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of planar perovskite solar cells, and in particular relates to a cathode-modified planar perovskite solar cell and a preparation method thereof. Background technique [0002] At present, silicon-based solar cells, which dominate the application field of photovoltaic technology, have provided us with products with an installed capacity of more than 10GW. Solar cells in solar cells continue to be questioned. Perovskite solar cells have attracted the attention of many researchers due to their low cost and simple structure. Since 2009, new solar cells based on organic-inorganic perovskite materials have received widespread attention. In just a few years, their energy conversion efficiency has rapidly increased from 3% to more than 15%, showing great potential. Application prospect. In order to further realize the needs of its industrialization, high-efficiency and stable perovskite solar cells have become the...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42H01L51/44H01L51/46
CPCH10K30/81H10K30/00H10K2102/00Y02E10/549
Inventor 蒋玉荣尚淑英秦瑞平马恒
Owner HENAN NORMAL UNIV
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