Algan/gan high electron mobility transistor with multi-channel side gate structure
A high electron mobility, multi-channel technology, applied in the field of AlGaN/GaN high electron mobility transistors, can solve the problems of transconductance decrease, channel control ability weakening, barrier layer thickness increase, etc., to improve transconductance and linearity Degree, reduction of off-state leakage current and quiescent power consumption, effect of increase in saturation current
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Embodiment 1
[0034] Embodiment 1: An AlGaN / GaN high electron mobility transistor with a double-channel side-gate structure with a gate fin width of 50 nm was fabricated.
[0035] Step 1. Using the MOCVD process, epitaxially grow the double heterojunction.
[0036] 1.1) On the SiC substrate, grow an intrinsic GaN layer with a thickness of 1 μm;
[0037] 1.2) A 15nm-thick AlGaN barrier layer is grown on the intrinsic GaN layer, wherein the Al composition is 35%, and a two-dimensional electron gas is formed at the contact position between the intrinsic GaN layer and the AlGaN barrier layer, and the first layer of AlGaN / GaN heterojunction;
[0038] 1.3) regrowing a second intrinsic GaN layer with a thickness of 20 nm on the 15 nm thick AlGaN barrier layer;
[0039] 1.4) A second 15nm-thick AlGaN barrier layer is grown on the second intrinsic GaN layer, wherein the Al composition is 35%, to obtain a second layer of AlGaN / GaN heterojunction.
[0040] The process condition of this step is: wi...
Embodiment 2
[0059] Embodiment 2: An AlGaN / GaN high electron mobility transistor with a double-channel side-gate structure with a gate fin width of 40 nm was fabricated.
[0060] Step A. Using the MOCVD process, epitaxially grow the double heterojunction.
[0061] in NH 3 N source, MO source is Ga source, under the process condition of growth temperature of 1000°C, first grow the intrinsic GaN layer with a thickness of 1.5 μm on the SiC substrate;
[0062] On the intrinsic GaN layer, a 20nm-thick AlGaN barrier layer is grown, in which the Al composition is 30%, and a two-dimensional electron gas is formed at the contact position between the intrinsic GaN layer and the AlGaN barrier layer, and the first layer of AlGaN / GaN heterojunction;
[0063] Then grow a second intrinsic GaN layer with a thickness of 25 nm on the 20 nm thick AlGaN barrier layer;
[0064] Finally, a second layer of 20nm-thick AlGaN barrier layer is grown on the second intrinsic GaN layer, wherein the Al composition i...
Embodiment 3
[0080] Embodiment 3: Fabricate an AlGaN / GaN high electron mobility transistor with a triple-channel side-gate structure with a gate fin width of 30 nm.
[0081] Step 1. Using the MOCVD process, epitaxially grow the triple heterojunction.
[0082] 1a) On a sapphire substrate, with NH 3 is the N source, the MO source is the Ga source, the growth temperature is 1000°C, and the intrinsic GaN layer with a thickness of 2 μm is grown;
[0083] 1b) On the intrinsic GaN layer, grow a 25nm-thick AlGaN barrier layer, in which the Al composition is 25%, and form a two-dimensional electron gas at the contact position between the intrinsic GaN layer and the AlGaN barrier layer, and obtain the first layer of AlGaN / GaN heterojunction;
[0084] 1c) growing a second intrinsic GaN layer with a thickness of 30 nm on the first AlGaN barrier layer with a thickness of 25 nm;
[0085] 1d) growing a second 25nm-thick AlGaN barrier layer on the second intrinsic GaN layer, wherein the Al composition...
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