C-direction sapphire polishing solution and preparation method thereof

A polishing liquid and sapphire technology, which is applied in the field of sapphire polishing, can solve the problems of increasing the workload of the production line, high consumption of 1,000 pieces, affecting the quality of sapphire, etc., and achieves the effect of easy control of process parameters and simplified process steps.

Inactive Publication Date: 2016-04-06
LENS TECH CHANGSHA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of C-oriented sapphire polishing liquid has a high dosage of 1,000 pieces, and the crystallization is serious during the polishing process,

Method used

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  • C-direction sapphire polishing solution and preparation method thereof
  • C-direction sapphire polishing solution and preparation method thereof
  • C-direction sapphire polishing solution and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0023] A novel sapphire C-direction polishing liquid is made from the following raw materials in parts by weight:

[0024] 92 parts of silica sol, 0.3 part of polishing aid, 0.5 part of complexing agent, 0.08 part of oxidizing agent, 0.5 part of surfactant, 5 parts of humectant, 0.5 part of pH regulator and 1.62 parts of deionized water.

[0025] The particle diameter of the silica sol is 50nm, and its concentration is 40%.

[0026] The polishing aid is prepared by mixing potassium chloride, potassium iodide and sodium fluoride in a weight ratio of 1:1:1.

[0027] The complexing agent is prepared by mixing diethylenetriamine and dihydroxyethylethylenediamine according to a weight ratio of 2:1.

[0028] The oxidant is prepared by mixing sodium hypochlorite, sodium perborate, peracetic acid and potassium perborate in a weight ratio of 1:2:2:1.

[0029] The surfactant is prepared by mixing octylphenol polyoxyethylene ether, sodium polyacrylate and sodium dodecylbenzenesulfonate...

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Abstract

The invention firstly aims at providing a C-direction sapphire polishing solution. The C-direction sapphire polishing solution comprises silica sol, an auxiliary polishing agent, a complexing agent, oxidant, surfactant, humectant, a pH adjusting agent and water. The C-direction sapphire polishing solution has the advantages that the wafer surface is oxidized into a soft oxidation layer through the oxidant; the soft oxidation layer formed on the wafer surface is removed through the silica sol, and polishing efficiency is improved; roughness of the wafer surface is lowered through the auxiliary polishing agent; contamination of impurity irons is reduced through the complexing agent; the surfactant facilitates cleaning and removal; crystallization generated in the polishing process is greatly reduced through the humectant; the PH value of a polishing solution system and chemical action in the polishing process are adjusted through the pH adjusting agent. The invention secondly aims at providing a preparation method of the C-direction sapphire polishing solution. The C-direction sapphire polishing solution and the preparation method thereof have the advantages that the process steps are simple, the process parameters are easy to control, and the C-direction sapphire polishing solution and the preparation method thereof are suitable for mass production.

Description

technical field [0001] The invention relates to the technical field of sapphire polishing, in particular to a C-direction sapphire polishing liquid and a preparation method thereof. Background technique [0002] Sapphire, also known as white gem, is a man-made single crystal material, the main component is Al 2 o 3 , for the hexagonal crystal structure. The hardness of sapphire is extremely high (Mohs hardness 9.2-9.4), and sapphire has the properties of high temperature resistance, wear resistance, corrosion resistance and wide light transmission band, and is a high-quality optical functional material. [0003] CMP (Chemical Mechanical Polishing) technology combines the dual advantages of chemical polishing and mechanical polishing, that is, it can obtain a high polishing rate and a perfect surface at the same time. At present, 60-95% of the CMP polishing liquid is water, the freight is high, and the service life of the polishing liquid is short. The company has previou...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 周群飞饶桥兵许立军
Owner LENS TECH CHANGSHA
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