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Method for preparing nitrogen oxide sensor element based on tungsten oxide nanometer blocks

A sensor element, nitrogen oxide technology, applied in the field of gas sensor, can solve the problem of high working temperature, and achieve the effect of high gas sensitivity, excellent repeatability and good stability

Inactive Publication Date: 2016-04-13
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems existing in the prior art, the present invention provides a method for preparing a nitrogen oxide sensor element based on tungsten oxide nanoblocks, which overcomes the problem of high working temperature of the tungsten oxide gas sensor in the prior art

Method used

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  • Method for preparing nitrogen oxide sensor element based on tungsten oxide nanometer blocks
  • Method for preparing nitrogen oxide sensor element based on tungsten oxide nanometer blocks
  • Method for preparing nitrogen oxide sensor element based on tungsten oxide nanometer blocks

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Cleaning of the ceramic substrate:

[0028] A ceramic sheet (1 cm × 2 cm) was used as the substrate, and the ceramic sheet substrate was placed in acetone solvent and absolute ethanol for 15 min and ultrasonically oscillated for 15 min to remove surface organic impurities. and dried in an infrared oven.

[0029] (2) Preparation of Pt interdigitated electrodes:

[0030] The ceramic substrate is placed in the vacuum chamber of the DPS-Ⅲ type high-vacuum target magnetron sputtering equipment, using platinum with a mass purity of 99.99% as the target material, and argon gas with a mass purity of 99.999% as the working gas, sputtering The working pressure is 2.0Pa, the sputtering power is 85W, the sputtering time is 10min, the substrate temperature is room temperature, and interdigitated platinum electrodes are formed on the surface of the alumina substrate.

[0031] (3) Prepare reaction solution:

[0032] First prepare a 0.05M tungsten hexachloride solution, weigh 1....

Embodiment 2

[0045] The difference between this embodiment and Embodiment 1 is that: the concentration of tungsten hexachloride in the solvothermal reaction liquid configured in step (3) is 0.025M, and the gas sensor element of the prepared tungsten oxide nano-block structure is at 100 lppmNO at ℃ 2 The sensitivity for gas is 9.72.

Embodiment 3

[0047]The difference between this embodiment and Example 1 is: the concentration of tungsten hexachloride in the solvothermal reaction liquid configured in step (3) is 0.075M, and the gas sensor element of the prepared tungsten oxide nano-block structure is at 100 lppmNO at ℃ 2 Gas has a sensitivity of 18.34.

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Abstract

The invention discloses a method for preparing a nitrogen oxide sensor element based on tungsten oxide nanometer blocks. The method comprises the steps of 1, cleaning a ceramic wafer substrate; 2, preparing a Pt interdigital electrode; 3, preparing a reaction solution; 4, preparing an air-sensitive sensor; 5, cleaning an aluminum oxide substrate obtained after reaction; 6, conducting heat treatment on the air-sensitive sensor element. A tungsten trioxide nanometer block structure is prepared on the ceramic wafer substrate with the solvothermal method, and has a huge specific surface area and high surface activity. After the nanometer block structure is applied to the field of air-sensitive sensors, results show that nitrogen oxide can be effectively detected by the tungsten trioxide nanometer block air-sensitive material at low temperatures around 100 DEG C, air sensitivity is high, repeatability is excellent, and stability is high.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a method for preparing a nitrogen oxide sensor element based on tungsten oxide nanoblocks. Background technique [0002] Nitrogen oxides (NO x ) is a poisonous and harmful gas that causes environmental problems such as acid rain and photochemical smog and poses a huge threat to human beings. Research on high-performance gas-sensing materials and devices for accurate detection and monitoring of nitrogen oxides is crucial to human health. Tungsten oxide is a wide bandgap N-type semiconductor material, which is widely used in the field of gas sensors. As a high-performance gas-sensing material, tungsten oxide can be widely used in various toxic and harmful gases such as NO X , SO 2 , NH 3 Wait for testing. However, WO 3 The disadvantage of high working temperature (about 250°C) of gas-sensing materials brings complexity and instability to the integration of sensing system...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
CPCG01N27/00
Inventor 胡明王自帅王毅斐刘相承袁琳
Owner TIANJIN UNIV
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