Boron nitride-coated carbon nanotube, and preparation method and application thereof

Abstract

The invention relates to a boron nitride-coated carbon nanotube, and a preparation method and application thereof, belonging to the fields of nano-materials and preparation technology. According to the invention, in virtue of film in-situ reaction technology, the outer surface of a carbon nanotube is coated with a boron nitride film with controllable thickness through solution volatilization deposition of boron oxide and chemical gas phase reaction on the premise that the geometric structure of the carbon nanotube is not changed, so the surface properties of the carbon nanotube are not changed; and thus, field emission performance of the carbon nanotube is improved.

Description

technical field [0001] The invention relates to a boron nitride-coated carbon nanotube, a preparation method and application thereof, and belongs to the field of nanomaterial preparation technology and application. Background technique [0002] Since carbon nanotubes were first discovered by Iijima of the NEC laboratory in 1991, they have attracted widespread attention from scientists for their unique properties and are predicted to cause revolutionary changes in many fields. Carbon nanotubes have high mechanical strength (100-1000 times that of steel), good electrical and thermal conductivity, large aspect ratio and extremely small tip curvature radius, stable chemical properties, and both metallic and semiconducting properties. , has low turn-on field strength and threshold field strength, so it is an ideal source of field emission electrons. However, for the commercial application of carbon nanotubes, the emission current density, emission stability and uniformity are st...

AI Technical Summary

Problems solved by technology

Compared with pure carbon nanotubes, nitrogen-doped carbon nanotubes can exhibit higher current density and stable emission current at a lower threshold voltage; carbon nanotubes pass through alkali metals (potassium, rubidium, cesium) After doping, the geometric structure is almost unchanged, but the electronic state near the Fermi surface changes significantly, the metallic carbon nanotubes and semiconducting carbon nanotubes cannot be distinguished, and the field strength factor increases, resulting in a decrease in the turn-on field strength and an increase in the emission current. Large, and the launch is relatively stable

However, this method can only change the local electronic structure of carbon nanotubes, and will introduce structural defects, and there is no way to accurately control the doping position and concentration, which is not suitable for industrial applications and popularization.

Images