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A kind of semiconductor element etchant and preparation method thereof

A technology of etching liquid and semiconductor, which is applied in the field of etching liquid, can solve the problems of non-stop stirring, etc., and achieve the effects of saving time, high etching precision, and strong etching uniformity

Active Publication Date: 2018-01-12
江苏守航实业有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are certain temperature requirements for acidic and alkaline copper chloride etching, which are generally controlled within the range of 45~55°C; the ferric chloride etching solution needs to be continuously stirred and other disadvantages

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] An etching solution for a semiconductor element, comprising: 1.5 parts by weight, 1.5 parts of iodine, 5 parts of sodium iodide, 5 parts of ammonium iodide, 1 part of carboxymethyl chitosan, 1 part of pentaerythritol, 1 part of sorbitol, 2 parts of ammonium carbonate 10 parts of n-butanol, 10 parts of ethanol, 0.1 part of vitamin C, 0.1 part of BHT, 0.1 part of potassium sorbate, and 5 parts of water.

[0016] The preparation method of above-mentioned semiconductor element etchant is: first iodine, pentaerythritol, sorbitol, BHT, n-butanol and ethanol were mixed and stirred for 5 minutes to obtain solution A; then sodium iodide, ammonium iodide, carboxymethyl chitosan , ammonium carbonate, vitamins, potassium sorbate and water were mixed and stirred for 5 minutes to obtain solution B; solution A and B were mixed, heated to 30°C, and stirred for 20 minutes.

Embodiment 2

[0018] An etching solution for a semiconductor element, comprising in parts by weight: 2 parts of iodine, 6 parts of sodium iodide, 6 parts of ammonium iodide, 1.2 parts of carboxymethyl chitosan, 1.2 parts of pentaerythritol, 1.2 parts of sorbitol, ammonium bisulfate 3 parts, 12 parts of n-butanol, 12 parts of ethanol, 0.2 parts of vitamin C, 0.12 parts of BHT, 0.12 parts of potassium sorbate, 6 parts of water.

[0019] The preparation method of above-mentioned semiconductor element etchant is: first iodine, pentaerythritol, sorbitol, BHT, n-butanol and ethanol are mixed and stirred for 6 minutes to obtain solution A; then sodium iodide, ammonium iodide, carboxymethyl chitosan , ammonium bisulfate, vitamins, potassium sorbate and water were mixed and stirred for 6 minutes to obtain solution B; mixed solutions A and B, heated to 32°C, and stirred for 22 minutes.

Embodiment 3

[0021] An etching solution for a semiconductor element, comprising in parts by weight: 2.5 parts of iodine, 9 parts of sodium iodide, 9 parts of ammonium iodide, 1.8 parts of carboxymethyl chitosan, 1.8 parts of pentaerythritol, 1.8 parts of sorbitol, and ammonium chloride 4 parts, 18 parts of n-butanol, 18 parts of ethanol, 0.4 parts of vitamin C, 0.18 parts of BHT, 0.18 parts of potassium sorbate, and 9 parts of water.

[0022] The preparation method of above-mentioned semiconductor element etchant is: first iodine, pentaerythritol, sorbitol, BHT, n-butanol and ethanol are mixed and stirred for 9 minutes to obtain solution A; then sodium iodide, ammonium iodide, carboxymethyl chitosan , ammonium chloride, vitamins, potassium sorbate and water were mixed and stirred for 9 minutes to obtain solution B; the solutions A and B were mixed, heated to 38°C, and stirred for 28 minutes.

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PUM

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Abstract

The invention provides a semiconductor element etching solution and a preparation method thereof. The etching solution comprises the following components: iodine, sodium iodide, ammonium iodide, carboxymethyl chitosan, pentaerythritol, sorbitol, ammonium salt, n butanol, ethanol, vitamin C, BHT, potassium sorbate, and water. The preparation method comprises the steps of firstly, mixing up iodine, pentaerythritol, sorbitol, BHT, n butanol and ethanol and stirring the mixture for 5-10 minutes to obtain a solution A; secondly, mixing up sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium salt, vitamin, potassium sorbate and water and stirring the mixture for 5-10 minutes to obtain a solution B; thirdly, mixing up the solution A and the solution B, heating the mixed solution at 30-40 DEG C and stirring the solution 20-30 minutes to obtain the semiconductor element etching solution. According to the technical scheme of the invention, the etching solution is fast in etching speed, high in precision and strong in etching uniformity. The preparation method is simple, easy to control, easy in industrial production, and low in production cost.

Description

technical field [0001] The invention relates to the field of etching liquid, in particular to an etching liquid for semiconductor elements and a preparation method thereof. Background technique [0002] A semiconductor element is an electronic device whose conductivity is between a good conductor and an insulator, and uses the special electrical properties of semiconductor materials to complete specific functions. With the advancement of technology, the application of semiconductor components is becoming more and more extensive, and the quality of semiconductor etching directly determines the overall product quality of semiconductors. There are six main types of etching solutions currently in use: ⑴acid copper chloride ⑵basic copper chloride ⑶ferric chloride ⑷ammonium persulfate ⑸sulfuric acid / chromic acid ⑹sulfuric acid / hydrogen peroxide etching solution. There are certain temperature requirements for acidic and alkaline copper chloride etching, which are generally control...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306
CPCH01L21/30608
Inventor 郑春秋
Owner 江苏守航实业有限公司
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