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Preparation method of three-dimensional photocatalytic materials supported by graphene nanobelts

A technology of graphene nanobelts and photocatalytic materials is applied in the field of preparation of three-dimensional photocatalytic materials to achieve the effects of improving activity and photocatalytic performance and simple preparation process

Active Publication Date: 2018-03-09
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, when preparing graphene nanoribbons in the experiment, due to the influence of other external factors, the prepared graphene nanoribbons are not so perfect, more or less there will be some deformation or defects

Method used

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  • Preparation method of three-dimensional photocatalytic materials supported by graphene nanobelts
  • Preparation method of three-dimensional photocatalytic materials supported by graphene nanobelts
  • Preparation method of three-dimensional photocatalytic materials supported by graphene nanobelts

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Experimental program
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Effect test

Embodiment 1

[0027] Graphene nanoribbon loaded semiconductor material GNR-TiO 2 / C 3 N 4 , containing C, H, Ti, O and H elements.

[0028] The above-mentioned graphene nanobelt loaded semiconductor material specifically includes the following steps:

[0029] (1) Preparation of graphene nanobelts

[0030] Graphene nanoribbons (GNR) were prepared by the following method: weigh 1.5 g of multi-walled carbon nanotubes, add 150 mL of concentrated sulfuric acid, and stir for 1 h. Under ice-bath conditions, slowly add 9 g of potassium permanganate, and stir for 2 h at 25° C. Then in an oil bath at 75 °C for 80 min. Under ice bath conditions, add 25mL of distilled water, then pour the above solution into a large beaker filled with 300-400mL of distilled water, and then add 5mL of hydrogen peroxide. The product GNR was obtained by centrifugation.

[0031] (2) Preparation of graphene nanobelt-supported semiconductor materials carbon nitride and titanium dioxide

[0032] Weigh 0.3g of titanium d...

Embodiment 2

[0044] A three-dimensional photocatalytic material GNR-TiO supported by graphene nanoribbons 2 / Bi 2 WO 6 . Contains C, Ti, O, H, Bi, W elements.

[0045] (1) Preparation of graphene nanobelts

[0046] Graphene nanoribbons (GNR) were prepared by the following method: weigh 1.5 g of multi-walled carbon nanotubes, add 150 mL of concentrated sulfuric acid, and stir for 1 h. Under ice-bath conditions, slowly add 9 g of potassium permanganate, and stir for 2 h at 25° C. Then in an oil bath at 75 °C for 80 min. Under ice bath conditions, add 25mL of distilled water, then pour the above solution into a large beaker filled with 300-400mL of distilled water, and then add 5mL of hydrogen peroxide. The product GNR was obtained by centrifugation.

[0047] (2) Preparation of graphene nanobelt-supported semiconductor titanium dioxide and bismuth tungstate.

[0048] Weigh 0.3g of titanium dioxide precursor, add 24mL of hydrogen peroxide solution and 5mL of ammonia water, and stir unt...

Embodiment 3

[0051] A three-dimensional photocatalytic material GNR-TiO supported by graphene nanoribbons 2 / C 3 N 4 . Contains C, N, Ti, O, H elements.

[0052] (1) Preparation of graphene nanobelts

[0053]Graphene nanoribbons (GNR) were prepared by the following method: weigh 1.5 g of multi-walled carbon nanotubes, add 150 mL of concentrated sulfuric acid, and stir for 1 h. Under ice-bath conditions, slowly add 9 g of potassium permanganate, and stir for 2 h at 25° C. Then in an oil bath at 75 °C for 80 min. Under ice bath conditions, add 25mL of distilled water, then pour the above solution into a large beaker filled with 300-400mL of distilled water, and then add 5mL of hydrogen peroxide. The product GNR was obtained by centrifugation.

[0054] (2) Preparation of graphene nanobelt-supported semiconductor titanium dioxide and carbon nitride

[0055] Weigh 0.3g of titanium dioxide precursor, add 24mL of hydrogen peroxide solution and 5mL of ammonia water, and stir until the solu...

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Abstract

The invention relates to a method for preparing three-dimensional photocatalytic materials with graphene nanoribbon-supported semiconductors. The titanium dioxide precursor is dissolved in a mixed solution of hydrogen peroxide and ammonia water, stirred until the solution is yellow and clear, and carbon nitride is added. When the solution becomes turbid, it is centrifuged and washed. Then add deionized water and ultrasonic-treated graphene nanoribbons, stir and react in the reactor, then centrifuge, wash, and dry, and then calcine in a nitrogen atmosphere to obtain the graphene nanoribbon load. Semiconductor three-dimensional photocatalytic materials. Compared with the existing technology, the present invention has a simple preparation process and effectively improves the activity and photocatalytic performance of the catalyst. The addition of graphene nanoribbons makes the material have an obvious response in the visible light region.

Description

technical field [0001] The invention relates to the technical field of preparation of catalyst materials for photocatalytic degradation of pollutants, in particular to a preparation method of a three-dimensional photocatalytic material supported by graphene nanobelts on semiconductors. Background technique [0002] In terms of energy conversion and environmental purification, photocatalytic technology is considered as a green technology that can effectively utilize solar energy. Titanium dioxide (TiO 2 ) as an important catalyst has many advantages: low cost, easy to obtain, strong physical and chemical stability, etc. However, the band gap of titanium dioxide is 3.2 eV, so that it can only absorb ultraviolet light, resulting in insufficient utilization of sunlight. In order to be able to synthesize photocatalytic materials with visible light response, we synthesized carbon nitride (C 3 N 4 ) into consideration. As a new metal-free polymeric semiconductor with a band ga...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01J23/31
CPCB01J23/002B01J23/31B01J27/24B01J2523/00B01J35/39B01J2523/47B01J2523/54B01J2523/69
Inventor 闵宇霖周凡琪李涛涛
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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