Strained thin film used for thin film pressure sensor, preparation method thereof, core body of thin film pressure sensor

A strained thin film and thin film pressure technology, applied in the field of sensors, can solve the problems of changing the resistance value of the strain resistance of the sensor, reducing the reliability of measuring strain, and limiting the sensitivity of the sensor, etc., to achieve the reduction of the temperature coefficient of resistance, high sensitivity coefficient and resistivity, and low Effect of Temperature Coefficient

Active Publication Date: 2019-01-01
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the main strain material used for the core of thin-film pressure sensors is nickel-chromium alloy, but because the strain factor of nickel-chromium alloy is lower than 2.5, the sensitivity of the sensor is limited, and because nickel-chromium alloy is exposed to air and water vapor for a long time, the alloy The chromium in the component is easily oxidized to chromium oxide, which changes the resistance value of the strain resistance of the sensor, thus reducing the reliability of measuring strain in harsh environments, and is not suitable for measuring strain in harsh environments

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A strained thin film used for a thin film pressure sensor according to the present invention is a tantalum nitride thin film.

[0026] In this embodiment, the composition of the tantalum nitride film is TaN 0.56 .

[0027] In this embodiment, the thickness of the tantalum nitride thin film is 350nm.

[0028] Different forms of tantalum nitride have different properties. The experimental results show that the closer the composition of tantalum nitride film is to Ta 2 N, the more in line with the requirements of the strained film used in the film pressure sensor. The tantalum nitride thin film of this embodiment has a gauge factor of 3.5, a sheet resistance of 12Ω / □, and a temperature coefficient of resistance of -40ppm when the film thickness is 350nm. These characteristics are the key to the preparation of a high-sensitivity, harsh-environment resistant thin-film pressure sensor parameter.

[0029] A method for preparing a strained thin film for a thin film pressure...

Embodiment 2

[0039] A thin-film pressure sensor core body of the present invention comprises an elastic substrate, on which a thin-film functional layer is provided, and the thin-film functional layer comprises a buffer layer, an insulating layer and nitrogen formed from strained materials for the thin-film pressure sensor of embodiment 1. The tantalum oxide thin film resistance layer, the buffer layer, the insulating layer and the tantalum nitride thin film resistance layer are sequentially arranged on the elastic base.

[0040] In this embodiment, the buffer layer is a tantalum oxide film with a thickness of 0.5 μm.

[0041] In this embodiment, the insulating layer is a silicon dioxide film with a thickness of 3 μm.

[0042] A method for preparing the thin film pressure sensor core of the present embodiment, comprising the following steps:

[0043] (1) A stainless steel elastic substrate is selected as the elastic substrate in this embodiment, and the planarization treatment of the stai...

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Abstract

The invention discloses a strain thin film for a thin film pressure sensor, a preparation method of a strain thin film, a thin film pressure sensor core. The strain thin film is a tantalum nitride thin film. The preparation method includes the following steps that: (1) an ion beam sputtering deposition method is adopted to bombard tantalum nitride targets, a tantalum nitride thin film preparation layer can be deposited on an elastic substrate required by a thin film sensor; and (2) annealing treatment is carried out, and the strain thin film for the thin film pressure sensor can be obtained. The thin film pressure sensor core comprises a buffer layer, an insulating layer and a tantalum nitride thin film resistance layer which are sequentially arranged on the elastic substrate. The strain thin film for the thin film pressure sensor and the strain thin film prepared by the preparation method of the invention have the advantages of high strain factor, low resistance temperature coefficient and excellent electrical conductivity. The thin film pressure sensor core has the advantages of high sensitivity and high reliability in a harsh environment.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a strained film used for a film pressure sensor and a preparation method thereof, and also relates to a core body of a film pressure sensor. Background technique [0002] Thin-film sensors are called third-generation sensors. Because thin-film pressure sensors are prepared by physical vapor deposition, they can be used in harsh environments such as high temperature, humidity, corrosion, and vibration. Due to its excellent stability and adaptability to harsh environments, thin-film pressure sensors have been widely used in the fields of aviation, aerospace, petroleum industry, and automobiles. [0003] At present, the main strain material used for the core of thin-film pressure sensors is nickel-chromium alloy, but because the strain factor of nickel-chromium alloy is lower than 2.5, the sensitivity of the sensor is limited, and because nickel-chromium alloy is exposed...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/22
CPCG01L1/22
Inventor 周国方景涛何峰龚星
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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