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A kind of preparation method of bismuth layered compound superlattice

A superlattice and compound technology, applied in the manufacture/processing of thermoelectric devices, electrical components, circuits, etc., can solve problems such as high thermal conductivity, non-insulation, and unfavorable expansion research and application of superlattice devices

Active Publication Date: 2017-12-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the technology must first deposit In on the Si(111) surface 2 Se 3 The buffer layer can successfully realize the Bi 2 Se 3 / In 2 Se 3 Superlattice growth; in order to meet the needs of high-temperature cracking of metal-organic compounds and low-temperature growth of bismuth compounds at the same time, a specially designed MOCVD growth device must be used, and the substrate material used is GaAs, which is expensive
In addition, Si and GaAs substrates have the disadvantages of high thermal conductivity, non-insulation, and opacity, which are not conducive to the extended research and development of superlattice devices grown on them in the fields of thermoelectric conversion, thermal detection, quantum transport, and optics. application

Method used

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  • A kind of preparation method of bismuth layered compound superlattice
  • A kind of preparation method of bismuth layered compound superlattice
  • A kind of preparation method of bismuth layered compound superlattice

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Embodiment 1

[0020] Embodiment 1: The periodic structure prepared on the muscovite substrate is Bi 2 Se 3 / In 2 Se 3 (8nm / 2nm) superlattice method is:

[0021]Step (1)——Using magnetron sputtering or electron beam evaporation to carry out molybdenum plating on the back of the muscovite sheet substrate; immerse the molybdenum-plated substrate in acetone and absolute ethanol solution in turn for ultrasonic cleaning, and The solution was washed for 3 minutes, and the cleaning was repeated 2 to 3 times; the surface of the muscovite was blown clean with high-purity nitrogen, and then the front side of the muscovite substrate was stuck on the tape, and then the tweezers were used to clamp the muscovite substrate along the direction perpendicular to the muscovite. The surface direction is quickly and evenly torn off to obtain the muscovite substrate;

[0022] Step (2)—Introduce the muscovite substrate into the molecular beam epitaxy system, heat it to 350-450°C to degas it, until the backgroun...

Embodiment 2

[0029] Example 2: The periodic structure prepared on the fluorine phlogopite substrate is Bi 2 Se 3 / In 2 Se 3 (8nm / 2nm) superlattice method is:

[0030] Step (1)—Using magnetron sputtering or electron beam evaporation to carry out molybdenum plating on the back of the fluorphlogopite sheet substrate; soak the molybdenum-plated substrate in acetone and absolute ethanol solutions for ultrasonic cleaning, and Wash in each solution for 3 minutes, and wash repeatedly 2 to 3 times; blow off the surface of fluorphlogopite with high-purity nitrogen, then stick the front side of the fluorphlogopite substrate on the tape, and then use tweezers to clamp the fluorphlogopite substrate along the Quickly and evenly tear it off perpendicular to the surface of fluorphlogopite to obtain a fluorphlogopite substrate;

[0031] Step (2)—Introduce the fluorine phlogopite substrate into the molecular beam epitaxy system, and heat it to 350-450°C to degas it until the background vacuum reaches 10...

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Abstract

The invention relates to a method for preparing a bismuth layered compound superlattice. In the method, the mica substrate is conventionally chemically cleaned and cleaved in the atmosphere, and then introduced into a vacuum system for heating and degassing; A superlattice thin film composed of bismuth compound thin layer and barrier material is grown. That is, first, a layer of bismuth compound is slowly deposited on the mica surface as a lattice mismatch buffer layer, and then a layer of barrier material is grown at the same temperature and rate to further improve the surface quality, and then keep the growth temperature constant and increase the growth rate to alternately grow bismuth Compound layer and barrier layer, until the growth of the set number of superlattice periods is completed. The invention ensures that each layer of material in the product superlattice grows in an ideal two-dimensional layered mode, achieves the rapid growth of the bismuth layered compound superlattice on the mica substrate and keeps the superlattice interface flat, and obtains Technical effects of period-tunable superlattice films.

Description

technical field [0001] The invention relates to a method for preparing a bismuth layered compound superlattice. Background technique [0002] Bismuth layered compound (hereinafter referred to as bismuth compound) Bi 2 Se 3 with Bi 2 Te 3 It is not only a strong topological insulator (topological insulator is a newly discovered class of material morphology, their bulk electronic state is an insulator with energy gap, the surface is a metal state without energy gap, and these surface states are spin-polarized), and It is an excellent medium and low temperature thermoelectric conversion material. By ultra-thin Bi 2 Se 3 or Bi 2 Te 3 The superlattice structure composed of layers and other suitable barrier materials has been proved to have more novel topological quantum properties and greater thermoelectric conversion figure of merit than its bulk materials, such as Bi 2 Se 3 with Bi 2 Te 3 The formed superlattice thermoelectric figure of merit ZT≈2.4, much higher tha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/00H01L35/34H01L35/16H01L35/18H10N10/00H10N10/01H10N10/852H10N10/853
CPCH10N10/853H10N10/00H10N10/852H10N10/01
Inventor 李含冬任武洋高磊张忠阳龙城佳李勇姬海宁戴丽萍周志华牛晓滨王志明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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