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A preparation method of an inorganic film for repairing surface defects of a carrier

A carrier surface and defect technology, applied in chemical instruments and methods, membrane technology, semi-permeable membrane separation, etc., can solve problems such as unfavorable flat surface, rough carrier surface, defects, etc., and achieve the effect of low price

Active Publication Date: 2018-07-03
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of preparation method of the inorganic membrane of repairing carrier surface defect, to overcome the rough and difficult surface of the carrier of the inorganic membrane that is used for hydrogen separation in the prior art. Defects, problems that do not contribute to the formation of a flat surface

Method used

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  • A preparation method of an inorganic film for repairing surface defects of a carrier
  • A preparation method of an inorganic film for repairing surface defects of a carrier
  • A preparation method of an inorganic film for repairing surface defects of a carrier

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preparation example Construction

[0042] A method for preparing an inorganic film for repairing surface defects of a carrier, comprising the following steps:

[0043] 1) dispersing graphene oxide in different concentrations in aqueous solution;

[0044] 2) adding a certain concentration of surfactant to the graphene oxide aqueous solution;

[0045] 3) Utilize the dip coating method to prepare the graphene oxide film on the defects on the rough carrier surface;

[0046] 4) Thermal reduction curing of the coating;

[0047] 5) Prepare an inorganic membrane on the repaired carrier by physical and chemical methods.

Embodiment 1

[0049] A 0.5 mg / mL graphene oxide aqueous solution and a 5 mmol / L cetyltrimethylammonium bromide solution were used to modify the surface of the porous stainless steel support. In this embodiment, graphene oxide is prepared by using the Hummers method.

[0050] Add 24mg of graphene oxide and 108mg of 1,4-benzenediboronic acid into 45mL of methanol solvent (the mass ratio of graphene oxide and 1,4-benzenediboronic acid is 1:5), at 90°C and 1000rpm For solvothermal reaction 60h. At room temperature, centrifuge at 10,000 rpm for 20 minutes to remove the supernatant; add a certain amount of methanol to the precipitate, and use a sonicator to sonicate for 10 minutes, and centrifuge the sonicated solution under the same conditions as before to obtain the precipitate And adding methanol, ultrasonic crushing and other operations cycled three times. The obtained precipitate was dried in a vacuum oven at 45°C. The precipitate was dissolved in deionized water to prepare a 0.5 mg / mL gr...

Embodiment 2

[0054] A 0.5 mg / mL graphene oxide aqueous solution and a 0.05 mmol / L cetyltrimethylammonium bromide solution were used to modify the surface of the porous stainless steel carrier. In this example, graphene oxide was prepared by the Brodie method.

[0055] The difference from Example 1 is that the concentration of the surfactant cetyltrimethylammonium bromide is 0.05mmol / L. All the other steps are the same as in Example 1.

[0056] figure 2 It is a scanning electron micrograph of the graphene oxide film formed on the porous stainless steel surface modified by this method. It can be seen that the pores on the surface of the porous stainless steel are partially covered with a layer of graphene oxide film, and the surface defects of the porous stainless steel are modified.

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Abstract

The invention discloses a method for remedying carrier surface detects and relates to a preparation method of an inorganic membrane for remedying the carrier surface detects. The preparation method includes following steps: 1), dispersing graphene oxide in a water solution to obtain a graphene oxide water solution; 2), adding a surfactant of certain concentration into the graphene oxide water solution to obtain remedying liquid; 3), utilizing a dip-coating lifting method to prepare the remedying liquid on a defect of the surface of a carrier to form a coating; 4), performing thermal reduction solidifying on the coating; 5), selecting one or multiple of a ceramic membrane pipe or a porous stainless steel pipe as the carrier. The dip-coating lifting method is utilized to prepare a graphene membrane on the defect of the surface of the carrier, and thermal reduction solidifying is performed on the coating, so that the objective of modifying the defect on the surface of the carrier is achieved. Convenience is brought to adopting physical and chemical methods to prepare the inorganic membrane on the carrier after being remedied.

Description

technical field [0001] The invention relates to the field of inorganic film preparation, in particular to a preparation method of an inorganic film for repairing surface defects of a carrier. Background technique [0002] The characteristic of modern petrochemical and oil refining industry is that in some large-scale processes, hydrogen is an important by-product, such as in the reforming and cracking process, and at the same time, hydrogen is an important raw material, such as in the synthesis of ammonia, synthesis of methanol, hydrogenation During refining and hydrocracking. The petrochemical industry is a large hydrogen consumer. Over the years, in the petrochemical industry, the supply of hydrogen has been in short supply. With the increase of raw oil and the increase of octane number requirements, the supply and demand of hydrogen will become more prominent. [0003] Among gas membrane separation technologies, hydrogen membrane separation technology is the membrane sep...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01D71/02B01D69/10B01D67/00
CPCB01D67/0039B01D69/105B01D71/021B01D71/022B01D71/024B01D71/028
Inventor 曾高峰戚本郁何晓帆李桂花张延风孙予罕
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI