Method for preparing rGO-loaded petal-shaped MoS2 heterostructure

A heterostructure, petal-shaped technology, applied in the field of preparation of rGO-supported petal-shaped MoS2 heterostructures, can solve the problems of unfavorable photocatalytic efficiency, inability to effectively inhibit the recombination of photogenerated electrons and holes, and achieve enhanced light absorption and photocatalysis. Performance, good interfacial bonding, effect of increasing catalytic sites

Inactive Publication Date: 2016-06-01
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But a single MoS 2 It cannot effectively inhibit the recombination of photogenera

Method used

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  • Method for preparing rGO-loaded petal-shaped MoS2 heterostructure
  • Method for preparing rGO-loaded petal-shaped MoS2 heterostructure
  • Method for preparing rGO-loaded petal-shaped MoS2 heterostructure

Examples

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preparation example Construction

[0027] The present invention uses a one-step hydrothermal method to prepare rGO-loaded petal-like MoS 2 Composite structure; MoS under vacuum or argon atmosphere 2 / rGO composite structure powder is annealed to further improve its crystallinity; adjust the type of precursor, the amount of graphene oxide added and the reaction time during the reaction process to achieve the MoS 2 Alteration and control of cluster geometry. MoS of the present invention 2 The preparation method of / rGO heterostructure comprises the following steps:

[0028] (1) Sodium molybdate dihydrate and thiourea are selected as reactants, and graphene oxide is used as a precursor, and the mixed solution is fully mixed to uniformly disperse the suspended mixture.

[0029] The molar ratio of sodium molybdate dihydrate and thiourea is 1:5, the amount of graphene oxide added is controlled within the range of 0% to 10% of sodium molybdate dihydrate, and the above reactants are added to 60mL deionized water to o...

Embodiment 1

[0037] Sodium molybdate dihydrate and thiourea were used as reactants, the molar ratio of sodium molybdate dihydrate and thiourea was 1:5, graphene oxide was used as precursor, graphene oxide was not added, and MoS was synthesized by hydrothermal reaction 2 clusters. The hydrothermal reaction temperature is 210°C, and the reaction time is 24h. The annealing treatment was carried out under the condition of Ar atmosphere, the annealing temperature was 450°C, the heating rate was 5°C / min, the holding time was 2h, and the furnace was cooled.

[0038] Such as figure 1 As shown, the MoS prepared in this example 2 The diameter of the cluster is 2.34 μm, and some MoS can be clearly seen on the surface of the cluster 2 Lamellar, poor dispersion of clusters.

Embodiment 2

[0040] Using sodium molybdate dihydrate and thiourea as reactants, the molar ratio of sodium molybdate dihydrate and thiourea is 1:5, graphene oxide is the precursor, and the amount of graphene oxide added is 1% of sodium molybdate dihydrate. %, MoS synthesized by hydrothermal reaction 2 / rGO composites. The hydrothermal reaction temperature is 210°C, and the reaction time is 24h. Annealing treatment under Ar atmosphere, the annealing temperature is 450°C, the heating rate is 5°C / min, the holding time is 2h, and it is cooled with the furnace.

[0041] MoS prepared in this example 2 Petal-like MoS in rGO composites 2 The diameter of the cluster is 1.31 μm, and MoS is clearly visible on the surface of the cluster 2 Sheets, clusters are tightly combined with graphene sheets.

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Abstract

The invention discloses a method for preparing rGO-loaded petal-shaped MoS2 heterostructure, and aims to improve the efficiency of photocatalytic degradation of organic dye. The method is a treatment method for increasing the crystallization degree through one-step hydrothermal reaction synthesis and annealing treatment, a heterogeneous composite structure that petal-shaped MoS2 clusters and rGO clusters are twined mutually can be formed, adsorption of organic pollutants can be remarkably improved due to the large specific surface area of a two-dimensional material, photo-induced electrons can be prompted to be rapidly transferred to a graphene lamella due to a heterogeneous interface of the two-dimensional material, photo-induced holes with oxidability in an MoS2 valence band is engaged in organic pollutant degradation, and thus the photocatalysis property of the material can be greatly improved. Moreover, the MoS2/rGO heterostructure plays a prompting role in improving the response of the material within a visible light range. The method is simple and clear in technical idea, and the degradation efficiency of the composite material to the organic dye is remarkably improved. The invention further discloses the technical idea for preparing semiconductor heterostructure by using a hydrothermal method and improving the efficiency of photocatalytic degradation of the organic dye.

Description

【Technical field】 [0001] The invention belongs to the field of semiconductor photocatalytic degradation of organic dyes, and relates to an rGO-loaded petal-shaped MoS 2 Methods for the preparation of heterostructures. 【Background technique】 [0002] Environmental pollution and energy crisis have become the key issues restricting the rapid development of the current society. Semiconductor photocatalytic degradation of organic matter can not only effectively utilize sunlight, but also control the increasingly serious environmental pollution problem, which has become a hot spot in the current academic and industrial circles. As a semiconductor photocatalyst, there are three basic requirements: first, the selected semiconductor material should have a suitable band gap to increase the absorption rate of visible light as much as possible; The degraded organic matter is fully combined and adsorbed; third, the photogenerated electrons and holes are separated in time to avoid recom...

Claims

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Application Information

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IPC IPC(8): B01J27/051
CPCB01J21/18B01J27/051
Inventor 马飞孙兰张龙徐可为
Owner XI AN JIAOTONG UNIV
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