Method for preparing hollow porous composite silicon-carbon material

A silicon carbon material, hollow technology, applied in the field of electrochemistry, can solve the problems of poor conductivity of silicon materials, unstable SEI film, loss of electrical contact, etc., achieve good cycle performance and specific capacity, cheap and easy to obtain raw materials, and simple synthesis method Effect

Inactive Publication Date: 2016-06-01
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the silicon material has poor conductivity, and due to the huge volume change (400%) during the cycle process, it is easy to pulverize, crack, and lose electrical contact.
What's more, since the silicon constantly exposes new surfaces during the volume change, the side reaction with the electrolyte is always going on, that is, the SEI film is unstable.

Method used

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  • Method for preparing hollow porous composite silicon-carbon material
  • Method for preparing hollow porous composite silicon-carbon material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Dissolve 50mg of PVP in 2ml of deionized water, add 5mg of commercial nano-silicon particles, ultrasonicate for 10min, and centrifuge to obtain PVP-coated nano-silicon particles; in 5ml of 0.1M CuCl 2 Add 0.1 mg of the above nano-silicon particles to the deionized aqueous solution, and then add 2.5 ml of 0.5 M NaOH aqueous solution and 2 ml of 0.1 M NH 2 OHHCl aqueous solution, shake the solution to mix the solution evenly. Stand at room temperature for 4h until the solution turns from yellowish brown to brownish green. Centrifuge, wash twice with methanol; dissolve 10mg of Zn(NO 3 ) 2 And stir quickly under the ice bath, then add 2ml of Pd-Cu 2 To a methanolic suspension (0.1 M) of O particles was added 30 mg of 2-methylimidazole, and the two solutions were mixed rapidly. Stir under ice bath for 2 hours, then at room temperature for 1 hour. Wash with 3% methanol solution of ammonium hydroxide to remove residual cuprous oxide. At this time, the solution returns to ...

Embodiment 2

[0026] Dissolve 100mg of CTAB in 2ml of deionized water, add 10mg of commercial nano-silicon particles, ultrasonicate for 10min, and centrifuge to obtain CTAB-coated nano-silicon particles; in 5ml of 0.1M CuCl 2 Add 0.3mg of the above nano-silicon particles to the deionized aqueous solution, and then add 4ml of 0.5M NaOH aqueous solution and 6ml of 0.1M NH 2 OH?HCl aqueous solution, shake the solution to mix the solution evenly. Stand at room temperature for 3h until the solution turns from yellowish brown to brownish green. Centrifuge, wash twice with ethanol; dissolve 10 mg of Zn(NO 3 ) 2 And stir quickly under the ice bath, then add 8ml of Pd-Cu 2 To an ethanol suspension (1 M) of O particles was added 80 mg of 2-methylimidazole, and the two solutions were mixed rapidly. Stir for 3 hours in the ice bath, then for 1 hour at room temperature. Wash with 3% ethanol solution of ammonium hydroxide to remove residual cuprous oxide, at this time the solution returns to yellowi...

Embodiment 3

[0028] Dissolve 100mg of PVP in 2ml of deionized water, add 20mg of commercial nano-silicon particles, ultrasonicate for 60min, and centrifuge to obtain PVP-coated nano-silicon particles; in 5ml of 2M CuCl 2 Add 0.6mg of the above nano-silicon particles to the deionized aqueous solution, and then add 8ml of 1.5M NaOH aqueous solution and 12ml of 0.9M NH 2 OH?HCl aqueous solution, shake the solution to mix the solution evenly. Stand at room temperature for 5h until the solution turns from yellowish brown to brownish green. Centrifuge, wash twice with tetrahydrofuran; dissolve 9 mg of Zn(NO 3 ) 2 And stir quickly under the ice bath, then add 14ml of Pd-Cu 2 To an ethanol suspension (1.5 M) of O particles was added 90 mg of 2-methylimidazole, and the two solutions were mixed rapidly. Stir for 3 hours in the ice bath, then 1.5 hours at room temperature. Wash with 3% methanol solution of ammonium hydroxide to remove residual cuprous oxide, at this time the solution returns to ...

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Abstract

The invention discloses a method for preparing a hollow porous composite silicon-carbon material. With cuprous oxide as a sacrificial template, a three-dimensional zeolite imidazole framework grows on a cuprous oxide-coated nano-silicon particle surface; silicon monoxide is synchronously etched away; and then a silicon-carbon composite material with a hollow porous yolk-shell three-dimensional structure is obtained. According to the prepared hollow porous silicon-carbon material, a space for nano-silicon particles for expansion and shrinkage is reserved in a pyrolytic carbon shell, so that the condition that nano particles are not agglomerated is ensured; and most of SEI is formed outside the carbon shell and is relatively stable. The carbon shell formed by ZiF-8 pyrolysis has a lot of holes, so that the rate capability of the material is facilitated. Compared with the reported method for synthesizing the silicon-carbon material, the method disclosed by the invention has the advantages that the synthesis method is simple; the raw materials are cheap and available; and the prepared hollow porous silicon-carbon material has relatively good cycle performance and specific capacity.

Description

technical field [0001] The invention belongs to the field of electrochemistry and relates to a new method for preparing a hollow porous composite silicon-carbon material. Background technique [0002] Silicon material due to its ultra-high theoretical capacity (4200mAhg -1 ), known as the most potential anode material for next-generation lithium-ion batteries. However, the silicon material has poor conductivity, and due to the huge volume change (400%) during the cycle process, it is prone to pulverization, cracking and loss of electrical contact. More importantly, since the silicon constantly exposes new surfaces during the process of volume change, the side reaction with the electrolyte is always going on, that is, the SEI film is unstable. Contents of the invention [0003] In order to improve the poor cycle performance of traditional silicon materials, the present invention provides a method for preparing hollow porous composite silicon-carbon materials. The holes f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/38H01M4/587H01M10/0525B82Y30/00
CPCB82Y30/00H01M4/366H01M4/386H01M4/587H01M10/0525Y02E60/10
Inventor 尹鸽平金继凯左朋建张瀚潘庆瑞
Owner HARBIN INST OF TECH
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