Dual perovskite/copper-indium-gallium-selenium solar battery

Abstract

The invention relates to a solar battery, and specifically relates to a dual perovskite / copper-indium-gallium-selenium solar battery. The dual perovskite / copper-indium-gallium-selenium solar battery comprises a perovskite layer at an upper layer and a copper-indium-gallium-selenium layer at a lower layer. The perovskite layer comprises an upper transparent conductive layer, a perovskite absorption layer and a lower transparent conductive layer which are successively laminated. The copper-indium-gallium-selenium layer comprises a zinc oxide aluminum-doped conductive layer, a zinc oxide layer, a cadmium sulfide thin film layer, a copper-indium-gallium-selenium absorption layer, a molybdenum conductive layer and a soda-lime glass base layer which are successively laminated. Dual perovskite and copper-indium-gallium-selenium can improve absorption of spectrums, enable photons which are not absorbed when passing through the upper-layer thin film perovskite layer to be continuously absorbed by lower-layer copper-indium-gallium-selenium, and the conversion rate can exceed 30%. The dual perovskite / copper-indium-gallium-selenium solar battery has the function of a high conversion rate and is suitable for batch production.

Description

technical field [0001] The invention relates to a solar cell, in particular to a dual-junction perovskite and copper indium gallium selenide solar cell. Background technique [0002] Existing "thin-film" solar cells, including "copper indium gallium selenide (CIGS)" thin-film photovoltaic solar cells, have lower material costs than general "crystalline silicon" solar cells, but some "thin-film" production processes are too complicated, making the total The manufacturing cost is high and cannot be commercialized; so far, the production cost of general "thin film" solar energy manufacturers has not been lower than the production cost of "kerosene" power generation, which hinders the commercialization of "thin film" solar energy; and the average conversion In terms of efficiency, it can only be close to "crystalline silicon", or slightly lower than "crystalline silicon", and needs to be further improved. [0003] The double-section "perovskite / copper indium gallium selenide" c...

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Problems solved by technology

[0009] In order to make a "copper indium gallium selenide (CIGS)" thin film at high temperature, and ensure that it holds the optimal chemical composition ratio, and become a standard mass production process, we use "copper indium gallium selenide" with a well-matched chemical composition (CIGS)" four-element solid-state target, using magnetron sputtering or radio frequency sputtering process, one-time coating; at the same time, in order to avoid the loss of "selenium (Se)" at high temperature, the process adopted by the general industry is to use "selenium Hydrogen" gas to supplement the loss of "selenium (Se)"; but this gas is toxic and not suitable for mass production; in order to avoid this defect, we separate the "selenization" annealing process, and first perform a one-time low-temperature coating " Copper indium gallium selenide" four elements, and then the "selenization" annealing process, separate out, use solid "selenium (Se)" to control the loss of "selenium (Se)"

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