Digital X-ray image detector based on ZnO semiconductor and preparation method thereof

Abstract

The invention discloses a digital X-ray image detector based on a ZnO semiconductor and a preparation method thereof. The digital X-ray image detector comprises a photovoltaic conversion device based on the ZnO semiconductor, a controller, a multichannel amplifier, a multiplexer, an analog-to-digital converter and a data output circuit. A bit line of the photovoltaic conversion device based on the ZnO semiconductor is connected with the data output circuit through the multichannel amplifier, the multiplexer and the analog-to-digital converter in sequence; and the output end of the controller is connected with a word line and a bias voltage line of the photovoltaic conversion device based on the ZnO semiconductor, the control end of the multiplexer, the control end of the analog-to-digital converter and the control end of the data output circuit. The digital X-ray image detector based on the ZnO semiconductor is low in cost, stable in performance, long in service life and simple in manufacturing method.

Description

technical field [0001] The invention belongs to the field of semiconductor X-ray image detection devices, and relates to a digital X-ray image detector based on ZnO semiconductor and a preparation method thereof. Background technique [0002] X-ray imaging is one of the current routine clinical diagnosis and non-destructive testing methods, and it is of great significance to the diagnosis of various diseases, metal flaw detection and safety inspection. Direct energy conversion X-ray image detectors not only have high resolution to clearly display the details of objects, but also have high sensitivity to greatly reduce the amount of exposure radiation. It is considered to be the ultimate development direction of flat panel detectors. Direct conversion flat panel detectors are mainly composed of X-ray photodetectors and thin film transistor arrays. [0003] The direct energy conversion flat panel detector widely used at present uses a-Se photoelectric detection material. How...

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Problems solved by technology

However, the production process of a-Se flat panel detectors is immature, and the working voltage is high, so the life is short, the failure rate is high, the overall performance quality is not high, and the manufacturing and maintenance costs are high

Other X-ray photoconductive layer materials for FPXI include polycrystalline TlBr, PbI 2 , HgI 2 , CdZnTe and PbO, etc., where HgI 2 , PbI 2 Because of its breakthroughs in large-area growth, high-resistance dark current, and high charge collection efficiency, it has been used in the development of commercial FPXI devices in recent years; due to environmental protection requirements from materials and processes, iodide, lead-containing materials, and cadmium-containing Materials and arsenic-containing materials (As is added to a-Se sensitive film to improve its stability) are potential threats to the environment. Wide bandgap semiconductor materials such as ZnO, GaN, and SiC have gradually attracted attention in the application research of X-ray detectors, but Existing X-ray detectors have high cost and poor performance stability

[0004] In terms of thin-film transistors, since the 1970s, polysilicon and amorphous silicon TFTs have been widely studied and industrialized first, but polysilicon and amorphous silicon TFTs have low mobility, performance degradation under light, and large size Uniformity problem, however, the cost of X-ray detector devices prepared using polysilicon and amorphous silicon TFT substrates is high and the service life is short

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