Method for real-time patterning of nitride growth silicon substrate

Abstract

The invention provides a method for real-time patterning of a nitride growth silicon substrate. The method comprises the following steps that (a) a substrate is provided; (b) back melting of the substrate is performed by utilizing metal liquid drops so that a patterned surface is formed on the surface of the substrate; and (c) epitaxial growth of nitride on the patterned surface of the substrate is performed. The advantages of the method are that a metal organic source is piped in the real-time growth process of the substrate, and the metal atoms are aggregated into the nanoscale liquid drops and uniformly combined on the surface of the substrate in high density. The metal liquid drops and the substrate form alloy under high temperature to corrode the substrate into an uneven surface so that stress caused by crystal lattice mismatch in the heteroepitaxial growth process of the substrate and a nitride epitaxial layer can be alleviated, and the epitaxial layer is enabled to be effectively relaxed. Meanwhile, penetrating dislocation density in the epitaxial layer can also be reduced so that defect density in the nitride epitaxial layer material can be reduced, the crystal quality of the material can be enhanced, and thus the optical and electrical properties of a device can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for real-time patterning of a nitride growth silicon substrate. Background technique [0002] Group III-V wide bandgap semiconductor materials represented by gallium nitride (GaN) have developed rapidly in recent years. GaN has the characteristics of wide band gap, direct band gap, good chemical stability and thermal stability. It has important and extensive application potential. [0003] Since GaN and aluminum nitride (AlN) and other intrinsic bulk single crystal materials are difficult to obtain, the current nitride thin film materials are mainly grown on sapphire, silicon carbide, silicon (Si), zinc oxide or gallium arsenide substrates. . Due to the lack of matching substrates for GaN-based epitaxial materials, the crystal quality needs to be further improved. [0004] Silicon materials are the cornerstone of today's microelectronics technology. Silicon material is...

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Problems solved by technology

The above-mentioned process is complicated, which greatly increases the manufacturing cost, and the pattern is limited by the photolithography layout, which is extremely unsuitable for the commercial application of silicon nitride semiconductor devices

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