Semiconductor structure and method for preparing semiconductor structure

Abstract

The invention discloses a semiconductor structure and a preparation method thereof. Specifically, the method comprises the following steps: (1) providing a substrate; (2) arranging a graphene layer on the upper surface of the substrate; and (3) forming a first nitride semiconductor layer on the upper surface of the graphene layer through sputtering deposition to get the semiconductor structure, wherein the first nitride semiconductor layer has crystal preferred orientation. Therefore, the preparation cost is reduced, the preparation technology is simplified, and a first nitride semiconductor layer with crystal preferred orientation is obtained.

Description

technical field [0001] The invention relates to the field of semiconductor technology and semiconductor manufacturing, in particular, the invention relates to a semiconductor structure and a method for preparing the semiconductor structure. Background technique [0002] In the field of semiconductor technology, the substrates of solar cells or light emitting diodes (LEDs) are mostly glass or metal. Using glass as the substrate can take advantage of the light transmittance of glass, and the cost is low, so it has good application prospects; using metal as the substrate, you can use the good electrical conductivity of metal to improve device performance, or use flexible metal film lining Fabrication of flexible semiconductor devices. However, for solar cells or LEDs with better performance, the semiconductor materials therein are generally required to be single crystals or polycrystals with good crystal orientation consistency, that is, the crystals therein have a preferred o...

AI Technical Summary

Problems solved by technology

At present, epitaxial growth or sputtering deposition methods can be used to obtain semiconductor thin films on the glass surface. The semiconductor thin films prepared by these methods are either amorphous materials or polycrystalline materials without crystal preferred orientation. It is difficult to obtain semiconductors with good crystal preferred orientation. Thin films, difficult to meet the requirements of high-performance solar cells or light-emitting diodes

[0003] Therefore, the current semiconductor technology for preparing nitride semiconductor materials based on glass or metal substrates still needs to be improved.

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