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LED and manufacturing method therefor

A manufacturing method and epitaxial layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as driving current increase

Active Publication Date: 2016-09-07
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an LED and its manufacturing method to solve the problem that the driving current corresponding to the LED chip in the constant voltage driving mode increases sharply as the temperature rises

Method used

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  • LED and manufacturing method therefor
  • LED and manufacturing method therefor
  • LED and manufacturing method therefor

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Embodiment

[0047] Use epoxy resin as the polymer matrix material, indium tin oxide (ITO) as the conductive filler, and mix uniformly according to the volume ratio of 1:0.4 to make the conductive polymer composite material. The conductive polymer composite material is evenly coated on the epitaxial layer by a spin coating method. Then the epitaxial wafer was placed in an oven and cured at 110° C. for 10 minutes. After standard photolithography and etching processes, a transparent conductive layer with variable resistivity is formed with a thickness of 1200A. After standard photolithography, evaporation, and alloying processes, the metal electrodes are fabricated. Finally, the substrate is ground and polished, and the epitaxial wafer is cut into an area of ​​about 120,000 um 2 stand-alone light-emitting diode devices. The Curie temperature Tc of the variable resistivity transparent conductive layer in this embodiment is about 100° C., its resistivity at room temperature is about 50 Ωcm,...

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Abstract

The invention discloses an LED. An epitaxial layer is grown on a substrate; a transparent conductive layer with variable electrical resistivity is manufactured on the epitaxial layer; a P electrode is manufactured on the transparent conductive layer; an N electrode is manufactured on the epitaxial layer; the transparent conductive layer is prepared from a conductive polymer composite material; the conductive polymer composite material comprises a polymer base material and a conductive filler at a volume ratio of 1 to 0.01-1 to 1; the polymer base material is one of epoxy resin, silica resin, polyethylene or vinylidene fluoride; and the conductive filler is one or more of carbon black, graphene, carbon nanotube, metal granules, metal fibers or metal oxide granules. The invention also discloses a manufacturing method for the LED. According to the LED, the problem that the corresponding driving current of the LED chip under a constant-voltage driving mode is increased sharply along with the increasing of temperature can be solved.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to an LED and a manufacturing method thereof. Background technique [0002] In the prior art, there are two driving modes of LEDs: constant voltage driving and constant current driving. Among them, the disadvantages of the constant voltage driving mode are as follows: figure 1 As shown, when the junction temperature of the LED rises from T1 to T2, since the forbidden band width of the semiconductor will decrease as the temperature rises, the turn-on voltage of the LED will also decrease accordingly, that is figure 1 The I-V curve shown is shifted to the left. If the driving voltage of the LED is maintained at V, when the junction temperature of the LED rises from T1 to T2, the corresponding driving current will rise from I1 to I2, resulting in the corresponding driving current of the LED chip in the constant voltage driving mode. The current rises sharply as the temperature rises, ca...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/00
CPCH01L33/005H01L33/02H01L2933/0008
Inventor 陈凯轩周弘毅邬新根李俊贤王新华
Owner XIAMEN CHANGELIGHT CO LTD
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