Yttria-zirconia sosoloid ceramics for temperature field of ultrahigh-temperature crystal growing furnace and preparation method for yttria-zirconia sosoloid ceramics

Abstract

The invention relates to the field of application of zirconia ceramics and particularly relates to yttria-zirconia sosoloid ceramics for a temperature field of an ultrahigh-temperature crystal growing furnace and a preparation method for the yttria-zirconia sosoloid ceramics. The yttria-zirconia sosoloid ceramics are prepared from the following chemical ingredients: 80% of (ZrO2+HfO2), 19.5% of Y2O3 and 0.5% of other trace impurities, wherein the other trace impurities are oxides. A high-purity yttria-zirconia sosoloid ceramic product for an artificial crystal furnace is obtained through thoroughly and uniformly mixing zirconia and yttria, carrying out magnetic stirring, smelting and crystallizing on yttria-zirconia sosoloid by using a high-frequency heating shell melting method, carrying out yttria-zirconia sosoloid crushing and granularity preparing and shaping, and carrying out sintering on yttria-zirconia sosoloid ceramics by adopting a two-step sintering method. Compared with metallic molybdenum materials, the yttria-zirconia sosoloid ceramic material has the advantages that the service temperature is higher, the safe service temperature is below 2,500 and is higher compared with that of the traditional metallic molybdenum materials, and the problems such as high-temperature supercontraction and cracking caused by high-temperature deformation of metallic materials are solved.

Description

technical field [0001] The invention relates to the application field of zirconia ceramics, in particular to a yttrium-zirconium solid solution ceramic used in the temperature field of an ultra-high temperature crystal growth furnace and a preparation method thereof. Background technique [0002] As an important crystal material, sapphire crystal has been widely used in many fields of science and technology, national defense and civil industry, and electronic technology. Such as infrared window materials, substrate substrates in the field of microelectronics, laser substrates, optical components, mobile phone screen glass and other uses. [0003] At present, the most mainstream method for stably growing large-size sapphire crystals in the world is the KY Kyropoulos method. The preparation cycle of sapphire crystal is long under the premise of maintaining single crystal phase and low dislocation density yield, and the quality assurance of crystal growth requires a constant t...

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Problems solved by technology

The insulation system of traditional sapphire crystal growth furnaces usually adopts the form of multi-layer tungsten-molybdenum heat shield, which is generally a multi-layer structure. Although it can meet the needs of crystallization, the loss of heat energy consumption is relatively serious, which seriously affects the production cost, quality and benefit of sapphire. , this phenomenon is also an important problem that crystal growth companies are eager to solve. In order to maintain a stable temperature field inside the furnace, the more heat the system flows out, the more heat the system needs to generate, and the greater the power consumption, which means The electric energy will continue to increase. At the same time, the greater the constant temperature fluctuation inside the temperature field, the greater the impact on the crystallization of the gradient temperature of the sapphire molten soup, which will cause a series of grain boundary bubbles, crystal stress cracking, sticking pots, etc. that are not conducive to the crystal yield. factor

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