High-temperature-resistant radar and infrared compatible stealth material based on frequency selective surface and preparation method of high-temperature-resistant radar and infrared compatible stealth material

A frequency-selective surface, stealth material technology, applied in chemical instruments and methods, metal material coating processes, manufacturing tools, etc., to achieve the effects of excellent oxidation resistance, low price, and good high temperature resistance

Active Publication Date: 2016-10-12
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Based on the above analysis, there is still no radar infrared compatible stealth material that can be applied to high temperature environments,

Method used

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  • High-temperature-resistant radar and infrared compatible stealth material based on frequency selective surface and preparation method of high-temperature-resistant radar and infrared compatible stealth material
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  • High-temperature-resistant radar and infrared compatible stealth material based on frequency selective surface and preparation method of high-temperature-resistant radar and infrared compatible stealth material

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Embodiment 1

[0048] a kind of like figure 1 The high temperature resistant radar and infrared compatible stealth material based on the frequency selective surface shown in the present invention includes a four-layer structure, including a dielectric layer I, a resistance layer, a dielectric layer II and a frequency selective surface layer in sequence from the inside to the outside, wherein the dielectric layer Layer Ⅰ and dielectric layer Ⅱ are both made of mullite fiber reinforced mullite-based composite material, and the thickness of both dielectric layer Ⅰ and dielectric layer Ⅱ is 2.5mm (that is, d1=d3=2.5mm); the resistance layer is made of ruthenium dioxide Glass-based resistive coating (ruthenium dioxide, RuO 2 is the conductive phase and lead borosilicate glass is the binder), the thickness of the resistance layer is d2=0.02mm; the frequency selective surface layer is composed of metal coatings with high temperature resistance, oxidation resistance and low infrared emissivity in pe...

Embodiment 2

[0061] a kind of like figure 1 The high temperature resistant radar and infrared compatible stealth material based on the frequency selective surface shown in the present invention includes a four-layer structure, including a dielectric layer I, a resistance layer, a dielectric layer II and a frequency selective surface layer in sequence from the inside to the outside, wherein the dielectric layer Layer Ⅰ and dielectric layer Ⅱ are both made of alumina fiber reinforced alumina matrix composite material, the thickness of dielectric layer Ⅰ is d1=2.8mm, the thickness of dielectric layer Ⅱ is d3=2.2mm; the resistance layer is ruthenium dioxide-based glass-based resistance coating (ruthenium dioxide RuO 2 is the conductive phase and lead borosilicate glass is the binder), the thickness of the resistance layer is d2=0.02mm; the frequency selective surface layer is composed of metal coatings with high temperature resistance, oxidation resistance and low infrared emissivity in period...

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Abstract

The invention discloses a high-temperature-resistant radar and infrared compatible stealth material based on a frequency selective surface. The high-temperature-resistant radar and infrared compatible stealth material comprises a dielectric layer I, a resistance layer, a dielectric layer II and the frequency selective surface from inside to outside sequentially, wherein the dielectric layer I and the dielectric layer II are made of oxide fiber reinforced oxide based composite materials; the resistance layer mainly comprises a high-temperature-resistant resistance coating; the frequency selective surface mainly comprises an anti-oxidative metal coating with periodical patterns, high temperature resistance and low infrared emittance. The preparation method comprises steps as follows: the dielectric layer I is prepared firstly, and the resistance layer is prepared on the dielectric layer I with a silk-screen printing technology; then the dielectric layer II is prepared on the resistance layer; finally, the frequency selective surface is prepared on the dielectric layer II with a physical deposition technology and a laser etching technology, and the stealth material is prepared. The radar and infrared compatible stealth material can be resistant to high temperature of 1,000 DEG C or higher, and has better high temperature resistance and excellent oxidation resistance.

Description

technical field [0001] The invention belongs to the field of radar wave-absorbing materials, in particular to a high-temperature resistant radar-infrared compatible stealth material based on a frequency selective surface and a preparation method thereof. Background technique [0002] With the rapid development of multi-spectral detection and guidance technology, single-function stealth materials can no longer meet the needs of equipment development. Multi-band compatible stealth materials, especially radar and infrared compatible stealth materials, have become the development direction of stealth materials research. However, in order to realize the integration (that is, mutual compatibility) of materials in radar and infrared stealth functions, there are still certain contradictions. The reason is that radar stealth requires strong absorption and low reflection of electromagnetic waves, while infrared stealth requires low absorption and high reflection. . Therefore, how to...

Claims

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Application Information

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IPC IPC(8): B32B5/02B32B5/06B32B5/26B32B33/00B32B37/02B32B38/14B23K26/362C23C14/35C23C14/14
CPCB23K26/361B32B5/02B32B5/06B32B5/26B32B33/00B32B37/02B32B38/145B32B2307/304B32B2307/306B32B2307/50B32B2307/714C23C14/14C23C14/35
Inventor 刘海韬田浩黄文质程海峰周永江
Owner NAT UNIV OF DEFENSE TECH
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