GaN-based schottky diode having hybrid anode electrode structure and preparation method thereof
A Schottky diode and electrode structure technology, applied in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of limited reverse voltage withstand characteristics, limited work function size of the metal layer, etc., to reduce turn-on voltage, enhance reverse breakdown characteristics, improve the effect of electric field distribution
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0036] The preparation method of the GaN-based Schottky diode of the mixed anode electrode structure of the present invention comprises the following steps:
[0037] a. Using metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) or hydride vapor phase epitaxy (HVPE) technology, the nucleation layer, stress and position used to form the epitaxial layer are sequentially grown on a suitable substrate fault buffer layer and charge drift layer;
[0038] b. Use photolithographic mask technology and inductively coupled plasma etching (ICP) or chemical reaction etching (RIE) or wet chemical etching technology to complete the discrete isolation of GaN-based Schottky diodes on the epitaxial layer (that is, after processing process, the epitaxial layer changes from the original all connected state to the discrete state, for example: 2-inch epitaxial wafer, the epitaxial layer can be separated into many Schottky diodes with a size of 300 microns*300 microns, but ...
Embodiment 1
[0046] Such as figure 1 As shown, this embodiment provides a GaN-based Schottky diode device with a simple mixed anode electrode structure, including:
[0047] The substrate 1 is a sapphire substrate; the nucleation layer 2 is an AlN nucleation layer; the stress and dislocation buffer layer 3 is an unintentionally doped GaN buffer layer; the charge drift layer 4 is an n-type doped GaN charge drift layer; The cathode electrode 5 is a Ti-Al-Ni-Au alloy; the low work function metal layer of the first anode electrode 6 is a Ti-Au alloy layer; the extremely thin dielectric layer 71 of the second anode electrode 7 is Al 2 o 3 Very thin dielectric layer; passivation dielectric insulating layer 8 is HfO 2 passivation dielectric insulating layer; the high work function metal layer 72 of the second anode electrode 7 is a Ni-Au alloy layer.
[0048] In this embodiment, the preparation method of a GaN-based Schottky diode device with a mixed anode electrode structure, the specific proc...
Embodiment 2
[0057] Such as figure 2As shown, this embodiment provides a GaN-based Schottky diode device with a field plate structure and a groove structure with a mixed anode electrode structure, including:
[0058] The substrate 1 is a GaN-sapphire composite substrate; the nucleation layer 2 is a GaN nucleation layer; the stress and dislocation buffer layer 3 is an unintentionally doped AlN buffer layer; the charge drift layer 4 is a high-resistance GaN / Al 0.3 Ga 0.7 N heterojunction; the cathode electrode 5 is a Ti-Al-Mo-Au alloy; the low power function metal layer of the first anode electrode 6 is a Ti-Al-Ti-Au alloy layer; the extremely thin dielectric layer of the second anode electrode 7 71 is an extremely thin dielectric layer of MgO; the passivation dielectric insulating layer 8 is SiN x passivation dielectric insulating layer; the high power function metal layer 72 of the second anode electrode 7 is a Pd-Pt-Au alloy layer.
[0059] The specific process steps of the preparatio...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More