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Epitaxial growth method capable of improving deep-ultraviolet LED luminous performance

A technology of epitaxial growth and luminous performance, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve stress problems, epitaxial layer cracks and other problems, reduce lattice mismatch, improve luminous performance, improve Effects of crystal quality and surface topography

Inactive Publication Date: 2016-10-12
NANTONG TONGFANG SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the AlN film prepared by the magnetron reactive sputtering method is directly used as the buffer layer for the epitaxial growth of AlN, it will bring serious stress problems, resulting in cracks in the epitaxial layer.

Method used

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  • Epitaxial growth method capable of improving deep-ultraviolet LED luminous performance
  • Epitaxial growth method capable of improving deep-ultraviolet LED luminous performance
  • Epitaxial growth method capable of improving deep-ultraviolet LED luminous performance

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Experimental program
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Embodiment 1

[0054] A 10nm-thick AlN film was sputtered on a flat sapphire substrate by magnetron sputtering, and then a low-temperature AlN buffer layer with a thickness of 10nm was grown by controlling the growth temperature to 500°C, the reaction chamber pressure to 50mbar, and the V / III ratio to 100. . Next, the growth temperature is controlled to be 900° C., the reaction chamber pressure is 50 mbar, the V / III ratio is 100, and an AlN stress control layer with a thickness of 0.1 μm is grown. Finally, a high-temperature AlN layer, an N-type AlGaN contact layer, and an Al x Ga 1-x N / Al y Ga 1-y N multi-quantum well active layer, P-type AlGaN electron blocking layer, P-type AlGaN confinement layer and P-type GaN contact layer.

[0055] see figure 2 , using X-ray diffraction rocking curve half-maximum width to characterize the crystal quality of AlN epitaxial thin films. It was found that the FWHM of the XRD (102) planes of the samples grown by using the growth method of the present...

Embodiment 2

[0057] A 100nm-thick AlN film was sputtered on a flat sapphire substrate by magnetron sputtering, and then the growth temperature was controlled at 900°C, the reaction chamber pressure was 200mbar, the V / III ratio was 5000, and a low-temperature AlN buffer layer with a thickness of 50nm was grown. . Then control the growth temperature to 1200°C, the reaction chamber pressure to 200mbar, the V / III ratio to 5000, and grow an AlN stress control layer with a thickness of 1μm. Finally, a high-temperature AlN layer, an N-type AlGaN contact layer, and an Al x Ga 1-x N / Al y Ga 1-y N multi-quantum well active layer, P-type AlGaN electron blocking layer, P-type AlGaN confinement layer and P-type GaN contact layer.

Embodiment 3

[0059] A 30nm-thick AlN film was sputtered on a flat sapphire substrate by magnetron sputtering, and then a low-temperature AlN buffer layer with a thickness of 30nm was grown by controlling the growth temperature at 800°C, the reaction chamber pressure at 100mbar, and the Ⅴ / Ⅲ ratio of 1000. . Next, the growth temperature is controlled to be 1100° C., the reaction chamber pressure is 100 mbar, the V / III ratio is 1000, and an AlN stress control layer with a thickness of 0.5 μm is grown. Finally, a high-temperature AlN layer, an N-type AlGaN contact layer, and an Al x Ga 1-x N / Al y Ga 1-y N multi-quantum well active layer, P-type AlGaN electron blocking layer, P-type AlGaN confinement layer and P-type GaN contact layer.

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Abstract

The invention discloses an epitaxial growth method for improving the luminous performance of a deep ultraviolet LED, which belongs to the field of semiconductor optoelectronics. The steps of the growing method from bottom to top in the present invention are: 1) processing the substrate; 2) growing a low-temperature AlN buffer layer; 3) growing an AlN stress control layer; 4) growing a high-temperature AlN layer; 5) growing an N-type AlGaN contact layer; 6) ) to grow Al x Ga 1‑x N / Al y Ga 1‑y N multi-quantum well active layer; 7) growing P-type AlGaN electron barrier layer; 8) growing P-type AlGaN confinement layer; 9) growing P-type GaN contact layer. Compared with the prior art, the method of the invention can improve the crystal quality and surface morphology of AlN and AlGaN materials, and significantly improve the luminous performance of deep ultraviolet LED devices.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronics, in particular to an epitaxial growth method for improving the luminous performance of deep ultraviolet LEDs. Background technique [0002] Deep ultraviolet LEDs based on high-quality high-Al composition AlGaN epitaxial films can be widely used in fields such as disinfection and sterilization, water and food treatment, biochemical detection, information storage, radar detection, and secure communication, with huge market potential and application prospects. The AlN and AlGaN materials with high crystal quality are the core basis for the preparation of the above-mentioned high-performance deep ultraviolet LEDs. [0003] At present, high-quality AlN single crystal substrates are expensive and difficult to prepare. Therefore, in the prior art, international researchers choose to use metal-organic chemical vapor deposition on sapphire substrates to prepare high-quality AlN thin films, oft...

Claims

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Application Information

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IPC IPC(8): H01L33/12H01L33/00C30B25/18C30B29/40
CPCH01L33/12C30B25/183C30B29/403C30B29/406H01L33/007
Inventor 吴真龙郑建钦田宇曾颀尧李鹏飞
Owner NANTONG TONGFANG SEMICON