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Application of B-doped SiC nanowire in field emission cathode material

A field emission cathode and emission cathode technology, which is applied in the field of nanomaterials, can solve the problems of SiC flexible cathodes being insufficient, and achieve the effects of good cost controllability, high electron emission stability, and high flexibility

Active Publication Date: 2016-10-26
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Abstract
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Problems solved by technology

[0004] However, the current research and development on SiC flexible cathodes is still not systematic enough, especially the research on SiC flexible cathodes with low turn-on electric field and high electron emission stability under different bending states and different temperatures is still very insufficient, which has excellent construction performance. There are great obstacles in flexible field emission devices, which need to be solved urgently

Method used

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  • Application of B-doped SiC nanowire in field emission cathode material
  • Application of B-doped SiC nanowire in field emission cathode material
  • Application of B-doped SiC nanowire in field emission cathode material

Examples

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Effect test

Embodiment 1

[0046] The initial raw material is polysilazane, in N 2 Under the protection of the atmosphere, heat preservation at 260°C for 30 minutes for thermal crosslinking and curing. Put the solidified SiCN solid into a nylon resin ball mill tank, and ball mill it into powder. Weigh 300mg polysilazane powder and 60mg B 2 o 3 Powder, mix the powder evenly and place it at the bottom of the graphite crucible. Cut the carbon cloth 5×5cm (length×width), in 0.05mol / L Co(NO 3 ) 3 Immerse in ethanol solution and sonicate for 10s, take it out and let it dry naturally in air environment. The treated carbon cloth substrate is placed on the top of the graphite crucible, and then put into the atmosphere sintering furnace heated by graphite resistance together with the crucible. The atmosphere furnace is first evacuated to 10- 4 Pa, and then filled with high-purity argon (purity: 99.99%) until the pressure is one atmospheric pressure (~0.11Mpa), after which the pressure is constant. Then heat...

Embodiment 2

[0049] Taking the B-doped SiC nanowire grown on the carbon fiber cloth in Example 1 as the flexible cathode, it was cut into five pieces of 0.4×0.6cm 2 Bending five pieces of flexible cathodes for 0, 50, 100, 150 and 200 times respectively (the bending radius is 1.2cm), then put the cathodes in a planar structure into the field emission test system in turn, and vacuum the system to 1.5×10 - 7 Pa, and finally the field emission performance test of the flexible cathode was carried out at room temperature. Figure 6 A digital photo of the flexible field emission cathode used for testing, showing that the cathode has high flexibility. Figure 7 It is the field emission current density-electric field intensity curve of the flexible cathode after 0, 50, 100, 150 and 200 times of bending, indicating that after different bending times, the open electric field of the flexible cathode is 0.94, 0.93, 0.95, 0.91, 0.92V / μm, has a very low turn-on electric field, and remains basically u...

Embodiment 3

[0051] Using the B-doped SiC nanowire grown on carbon fiber cloth in Example 1 as a flexible cathode, it was cut into five pieces of 0.4×0.6cm 2 The five flexible cathodes are bent into concave type I, concave type II, planar type, convex type I and convex type II structures respectively (wherein, the bending radius of concave surface I and convex surface I is 1.2cm, concave surface II and convex surface II has a bending radius of 0.4cm), then the cathodes are sequentially loaded into the field emission test system, and the system is evacuated to 1.5×10 -7 Pa, and finally the field emission performance test of the flexible cathodes with five structures was carried out at room temperature. Figure 9 It is the field emission current density-electric field intensity curve of the flexible cathode in five bending states, which shows that in different bending states, the open electric field of the flexible cathode is only 1.01, 0.98, 0.94, 0.89 and 0.86V / μm, indicating that in It h...

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Abstract

The invention relates to nanowire material applied in field emission material, particularly relates to application of a B-doped SiC nanowire in field emission cathode material, and belongs to the technical field of nano-material. The B-doped SiC nanowire is a field emission cathode. An emission electric field is formed between the field emission cathode and a field emission anode in voltage applying. The turn-on field intensity of the field emission cathode is 0.6-1.05V / muA when emission current density is 10muA / cm2 under the condition of vacuum. The B-doped SiC nanowire field emission cathode material is convenient to process, great in cost controllability, stable in performance and high in flexibility; the material has low turn-on electric field after different bending frequency and basically remains unchanged and maintains high electron emission stability; the material has low turn-on electric field under different bending states and basically remains unchanged and maintains high electron emission stability; and the material has low turn-on electric field under different temperature and maintains high electron emission stability.

Description

technical field [0001] The invention relates to a nanowire material used in field emission materials, in particular to the application of B-doped SiC nanowires in field emission cathode materials, and belongs to the technical field of nanometer materials. Background technique [0002] Since the beginning of the 21st century, the design and synthesis of nanostructures based on a new generation of flexible nanostructure devices has become a new hotspot in nanomaterials research. Field emission is one of the intrinsic properties of low-dimensional nanomaterials. A large number of research results show that nanostructures have excellent field emission properties that traditional materials do not have, and have great potential application prospects in the fields of field emission displays, X-ray tubes and other optoelectronic devices. Among many field emission research systems, flexible field emission cathodes have attracted much attention in recent years due to their wide appli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/304H01J9/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01J1/304H01J9/025H01J2209/0223
Inventor 杨为佑陈善亮高凤梅郑金桔杨祚宝
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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