A kind of Ga-doped ZNO nano-ink and preparation method thereof

Abstract

The invention provides Ga-doped ZnO nano ink and a preparation method thereof. A Ga element can be codoped in ZnO nano ink through soluble salt, and a mole ratio between the Ga element and a Zn element is (1 to 12) to 100. The preparation method of the Ga-doped ZnO nano ink comprises the following steps: adding soluble Ga salt and soluble Zn salt in a solvent, and uniformly mixing, thus obtaining a precursor solution; mixing and stirring the obtained precursor solution with an alkali solution, thus obtaining a mixed solution; adding acetone in the mixed solution, and then centrifuging, thus obtaining sediment; finally dispersing the sediment in a dispersion solvent, thus obtaining nanoparticle ink. According to the preparation method provided by the invention, the synthetic conditions are simple and easy, a protective atmosphere is not needed, an additional organic ligand is not needed to be added, and regulation and control on Ga doping concentration can be realized; low-temperature solution film forming can be realized by doped ZnO nanoparticles obtained in the invention, and a high-quality charge transfer layer thin film can be obtained without an aftertreatment means.

Description

technical field [0001] The invention relates to the technical field of nanoparticles, more specifically, to a Ga-doped ZnO nano-ink and a preparation method thereof, belonging to the technical field of material preparation. Background technique [0002] ZnO has a bandgap width of 3.37eV at room temperature and an exciton binding energy of 60meV. It is a transparent conductive oxide direct bandgap wide bandgap semiconductor material. Usually, during the formation of ZnO particles, O vacancies and Zn interstitial atoms are generated, and these intrinsic defects make ZnO naturally exhibit n-type conductivity. In addition, ZnO nanoparticles have the characteristics of solution processing, making it an excellent thin-film electron transport material, which is widely used in optoelectronic devices such as solar cells and light-emitting diodes. [0003] The preparation of optoelectronic devices by ZnO nanoparticles needs to adjust their energy band structure to optimize the device...

AI Technical Summary

Problems solved by technology

The former requires cumbersome ligand exchange procedures, and many defects may be introduced on the surface after ligand exchange; the latter often damages the physical properties of the adjacent layers of ZnO due to high temperature heating, deteriorating device performance, and will also limit its use in flexible devices. However, at present, the low-temperature solution doping is generally doped with a single element, and the performance of the prepared doped ZnO is not high. Therefore, it is necessary to provide a doped ZnO with convenient doping and high performance to meet the current needs.

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