MEMS device, method for manufacturing MEMS device, and electronic device

A technology for electronic devices and devices, applied in the field of MEMS devices and their preparation, can solve problems such as device damage, and achieve the effects of suppressing damage, protecting devices, and improving yield

Active Publication Date: 2016-12-07
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the manufacturing process of MEMS devices (such as uPhone), the angle and thickness of the thin film appear slits during padding, and chemical etchant (C

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS device, method for manufacturing MEMS device, and electronic device
  • MEMS device, method for manufacturing MEMS device, and electronic device
  • MEMS device, method for manufacturing MEMS device, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0040] The current preparation methods of MEMS devices are as follows Figure 1a-1e As shown, the method will be further described below with reference to the accompanying drawings. First, a semiconductor substrate 101 is provided, and a MEMS device 103, such as a diaphragm or a sensing film, is formed on the semiconductor substrate 101, to obtain Figure 1a The pattern shown.

[0041] Next, a sacrificial material layer 102 is formed on the semiconductor substrate and patterned to expose a part of the semiconductor substrate to form a stepped pattern to obtain Figure 1b The pattern shown.

[0042] A functional material layer 104 is deposited to cover the semiconductor substrate and the sacrificial material layer 102 to obtain Figure 1b The pattern shown.

[0043] A spacer 105 is formed on the side wall of the functional material layer 104 to obtain Figure 1c The pattern shown.

[0044] A metal layer 106 is formed on the sidewalls of the functional material layer 104 and the spacer 10...

Example Embodiment

[0048] Example 1

[0049] The present invention also provides a method for preparing the MEMS device, which is combined with Figure 2a-2g To further explain the method, the 2a-2g are schematic diagrams of the manufacturing process of the MEMS device in this embodiment.

[0050] First, step 201 is performed to provide a semiconductor substrate 201 on which a sacrificial layer 202 partially covering the semiconductor substrate 201 is formed to form a stepped structure.

[0051] Specifically, such as Figure 2a As shown, in this step, the semiconductor substrate 201 may be at least one of the following materials: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), germanium-on-insulator Silicon (S-SiGeOI), silicon germanium on insulator (SiGeOI), germanium on insulator (GeOI), etc.

[0052] A MEMS element 203 is formed on the semiconductor substrate 201, wherein the MEMS element 203 can be selected according to the type of the MEMS device, for example, it can be a diaphrag...

Example Embodiment

[0083] Example 2

[0084] The present invention also provides a MEMS device, which is prepared by using the method described in Embodiment 1. The semiconductor device prepared by the method described in Example 1 of the present invention can improve the thin film composite layer, so that the metal at the corners of the device has no cracks, and can resist the corrosion of wet chemical etchant (Wet Chemical) at a low level, protect the device, and further improve The performance and yield of the MEMS device are improved.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention relates to a MEMS device, a method for manufacturing the MEMS device, and an electronic device. The method comprises six steps: in step one, a semiconductor substrate is provided and a sacrificial layer covering a part of the semiconductor substrate is formed on the semiconductor substrate to form a stepped structure; in step two, a functional material layer is deposited in a conformal manner in order to cover the semiconductor substrate and the sacrificial layer; in step three, a gap wall is formed on the sidewall of the functional material layer at the stepped structure; in step four, a dry film layer is formed on the sidewall of the functional material layer and the gap wall, in order to cover the gap wall and the sidewall; in step five, a metal material layer is deposited and patterned, in order to form a metal layer and cover the dry film layer; and in step six, the sacrificial layer is removed to form a cavity. The MEMS device, the method for manufacturing the MEMS device, and the electronic device in the present invention have the advantages of (1) improving film stack of a thin film composite layer; (2) inhibiting wet chemical etching from damaging the device; and (3) protecting the device and improving yield.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a MEMS device, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, smartphones, integrated CMOS and micro-electromechanical systems (MEMS) devices have increasingly become the most mainstream and advanced technologies in the market for sensor products, and with technology updates, towards The direction of small size, high performance and low power consumption is developing. [0003] Among them, MEMS sensors are widely used in automotive electronics: such as TPMS, engine oil pressure sensor, air pressure sensor of automobile brake system, automobile engine intake manifold pressure sensor (TMAP), common rail pressure sensor of diesel engine; consumer electronics: such as tire pressure gauge , sphygmomanometer, cabinet scale, health scale, pressure sensor for washing m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B81C1/00B81B7/02
Inventor 郑超王伟
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap