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Method for filling organic polymers in conductive or semiconducting micropores

A technology for filling polymers and semiconductors, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as chip short circuits, achieve the effects of buffering stress corrosion resistance, low cost, and improving corrosion resistance

Active Publication Date: 2020-07-14
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, while the packaging density is increased, the possibility of chip short circuit is also increased.

Method used

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  • Method for filling organic polymers in conductive or semiconducting micropores
  • Method for filling organic polymers in conductive or semiconducting micropores

Examples

Experimental program
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Effect test

Embodiment 1

[0025] This embodiment relates to a method for filling organic polymers in conductor or semiconductor micropores, the specific steps are as follows:

[0026] Step (1): Put the copper sheet with micropores on the surface into acetone and ethanol for degreasing treatment, then pickle to remove oxides on the surface of the substrate, and finally rinse the surface of the substrate with pure water;

[0027] Step (2): Put the cleaned copper sheet into the configured aqueous phase solution, its components are 0.01g / mL sodium dodecylsulfonate, 6% volume fraction of acrylic acid, 0.002g / mL of Diazonium tetrafluoroborate, 0.01g / mL EDTA-2Na;

[0028] Step (3): Take out the sample after reacting for a period of time, and measure the thickness of the organic matter at the section;

[0029] Step (4): Adjust the reaction time according to the thickness in step (3), and repeat steps (1) to (3), so that the organic matter deposited on the copper substrate can fill the defects in the pores; th...

Embodiment 2

[0031] This embodiment relates to a method for filling organic polymers in conductor or semiconductor micropores, the specific steps are as follows:

[0032] Step (1): Put the p-type silicon chip with a resistivity of 5Ω·cm and micropores into acetone and ethanol for degreasing treatment, then pickle to remove oxides on the surface of the substrate, and finally clean the substrate with pure water Rinse the surface clean;

[0033] Step (2): Put the cleaned silicon chip into the configured aqueous phase solution, its components are 0.01g / mL sodium dodecylsulfonate, 6% volume fraction of acrylic acid, 0.002g / mL of Pyrazole diazonium inner salt, 0.01g / mL of EDTA-2Na;

[0034] Step (3): Take out the sample after reacting for a period of time, and measure the thickness of the organic matter at the section;

[0035] Step (4): adjusting the reaction time according to the thickness in step (3), and repeating steps (1) to (3), so that the organic matter deposited on the silicon wafer ...

Embodiment 3

[0037] This embodiment relates to a method for filling organic polymers in conductor or semiconductor micropores, the specific steps are as follows:

[0038] Step (1): Put the n-type GaAs sheet with a resistivity of 50Ω·cm and micropores into acetone and ethanol for degreasing treatment, then pickle to remove oxides on the surface of the substrate, and finally wash the substrate with pure water Rinse the surface clean;

[0039] Step (2): Put the cleaned GaAs sheet into the prepared aqueous phase solution, the components of which are 1g / mL sodium dodecylsulfonate, 6% volume fraction of acrylic acid, 0.002g / mL tris Pterene diazonium salt, 0.01g / mL EDTA-2Na;

[0040] Step (3): Take out the sample after reacting for a period of time, and measure the thickness of the organic matter at the section;

[0041] Step (4): Adjust the reaction time according to the thickness in step (3), and repeat steps (1) to (3), so that the organic matter deposited on the GaAs sheet can fill the defe...

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Abstract

The invention relates to a method for filling organic polymer in micropores of a conductor or a semiconductor. The method includes the steps of placing the conductor or the semiconductor, with micropores, subjected to surface pretreatment in a water phase solution to conduct chemical grafting to finally realize the purpose of filling organic polymer in the micropores from bottom to top. Filling organic polymer in micropores through chemical grafting can solve the problem that flawless filling can not be achieved through a common coating and spin coating method. The filled organic polymer provides insulating and stress buffering functions and also can increase corrosion resisting performance of porous materials according to use purposes. The method is widely applied to surface treatment of various materials, and the field of microelectronic manufacture of high-class electronic devices.

Description

technical field [0001] The invention belongs to the fields of material chemistry and microelectronics manufacturing, and in particular relates to a method for filling organic polymers in conductor or semiconductor micropores. Background technique [0002] In the field of microelectronics manufacturing and packaging, it is an important form of electronic packaging to realize 3D stacked electronic packaging through micro-holes on conductor or semiconductor substrates. However, in the post-packaging process, the micropores need to be completely filled to avoid stress concentration, so that the microelectronic device has better performance and higher reliability. However, in the filling process, it is difficult to achieve defect-free filling by general coating or spin coating methods, and the preparation process is complicated, which reduces the repeatability of the process. Although the current methods have made great progress in optimizing the hole filling problem, there are ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56C08F120/06
CPCC08F120/06H01L21/56
Inventor 高兰雅李明张珊珊张俊红
Owner SHANGHAI JIAOTONG UNIV
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