Rare earth ion-doped Na5Lu9F32 single crystal and growing method thereof
A technology of na5lu8.865tb0.135f32 and na5lu8.73eu0.27f32, which is applied in the field of rare earth ion-doped Na5Lu9F32 single crystal and its growth, can solve the problems of unfavorable large-scale production of high-quality fluoride single crystal, affecting crystal quality, and a large number of color bands. Achieve the effects of avoiding pollution and erosion, high material density and simple equipment
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Embodiment 1
[0037] A rare earth ion doped Na 5 Lu 9 f 32 A method for growing a single crystal, comprising the following specific steps:
[0038] (1), according to the following composition: 40mol% NaF, 58.5mol% LuF 3 , 1.5mol% CeF 3 , weighing a total amount of 150 grams of each preparation raw material with a purity greater than 99.99%, placing them in a mill after mixing, and milling and mixing for 5 hours to obtain a uniform powder;
[0039] (2), the above-mentioned mixture is placed in the boat-shaped platinum crucible, and then installed in the platinum pipeline of the tubular resistance furnace, and then firstly use N 2 Remove the air in the platinum pipe with gas, and then conduct reaction treatment for 5 hours at a temperature of 770°C under HF gas. 2 Gas cleaning the residual HF gas in the pipeline to obtain polycrystalline powder;
[0040] (3), the above-mentioned polycrystalline powder is placed in a grinder and ground into powder, then placed in a Pt crucible and compac...
Embodiment 2
[0045] It is basically the same as Example 1, except that the raw materials in step (1) are composed according to the following proportions: 40mol%NaF, 56mol%LuF 3 , 4mol% EuF 3 , placed in a mill after mixing, milling and mixing for 6 hours; in the step (2), at a temperature of 800 ° C, under HF gas, the reaction treatment was carried out for 1 hour; the parameters for growing crystals in the step (4) were: furnace body temperature is 1020°C, the inoculation temperature is 880°C, the temperature gradient of the solid-liquid interface is 80°C / cm, and the upward movement speed of the thermal field is 2mm / h; in step (5), the furnace temperature is lowered to room temperature at 50°C per hour, and finally Eu 3+ ion-doped Na5 Lu 9 f 32 single crystal.
[0046] For prepared Eu-containing 3+ Ion-doped Na 5 Lu 9 f 32 The single crystal is tested for performance, the XRD pattern of the single crystal is the same as image 3 are basically the same, so the sample obtained by gr...
Embodiment 3
[0048] It is basically the same as Example 1, except that the raw materials in the step (1) are composed according to the following proportions: 40mol% NaF, 57.2mol% LuF 3 , 2.8mol% TbF 3 , placed in a mill after mixing, milling and mixing for 5.5 hours; in step (2), at a temperature of 780 ° C, under HF gas, the reaction treatment was carried out for 3 hours; the parameters for growing crystals in step (4) were: furnace body temperature The inoculation temperature is 1010°C, the inoculation temperature is 870°C, the temperature gradient of the solid-liquid interface is 60°C / cm, and the upward movement speed of the thermal field is 1.2mm / h; in step (5), the furnace temperature is lowered to room temperature at 30°C per hour, and finally get Tb 3+ ion-doped Na 5 Lu 9 f 32 single crystal.
[0049] For prepared Tb-containing 3+ Ion-doped Na 5 Lu 9 f 32 The single crystal is tested for performance, the XRD pattern of the single crystal is the same as image 3 are basical...
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