Carbon substrate surface TaC coating layer and preparation method thereof

A carbon substrate and coating technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of complex coating composition, easy cracking of the coating, affecting the protection of the substrate, etc., to achieve outstanding thermal stability, combined with The effect of high strength and high bond strength

Inactive Publication Date: 2017-01-04
NAT UNIV OF DEFENSE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the coating prepared by the sol-gel method is easy to crack and cannot cover the surface of the substrate densely; because the raw material is easily doped by the embedding method, there are often Ta in the product. 2 C, TaO 2 and Ta 2 O a variety of non-target phases, the coating composition is complex; the plasma spraying method has high process costs and is prone to oxidation during the spraying process; the CVD method can prepare TaC coatings with reasonable chemical composition and density, but

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  • Carbon substrate surface TaC coating layer and preparation method thereof
  • Carbon substrate surface TaC coating layer and preparation method thereof
  • Carbon substrate surface TaC coating layer and preparation method thereof

Examples

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Example Embodiment

[0032] Example 1:

[0033] A TaC coating on the surface of a carbon substrate of the present invention includes TaC formed in situ by a hybrid complex containing Ta and C and carbon of the carbon substrate, and TaC formed by decomposition of the hybrid complex containing Ta and C.

[0034] In this embodiment, the hybrid complex containing Ta and C is Ta(O)C, and the carbon matrix is ​​graphite material.

[0035] In this embodiment, the average grain size of the TaC coating on the surface of the carbon substrate is 10 μm, and the average thickness is 50 μm.

[0036] The preparation method of the TaC coating on the surface of the carbon substrate of this embodiment includes the following steps:

[0037] (1) Synthesis of TaC precursor: TaCl 5 Is the tantalum source, the first solvent is the mixture of acetylacetone (chelating agent) and methanol, TaCl 5 The molar ratio of acetylacetone:methanol is 1:2:60, the precursor sol is obtained by stirring at 40℃ for 12h; then the solvothermal react...

Example Embodiment

[0043] Example 2

[0044] A TaC coating on the surface of a carbon substrate of the present invention includes TaC formed in situ by a hybrid complex containing Ta and C and carbon of the carbon substrate, and TaC formed by decomposition of the hybrid complex containing Ta and C.

[0045] In this embodiment, the hybrid complex containing Ta and C is Ta(O)C, and the carbon matrix is ​​graphite material.

[0046] In this embodiment, the average grain size of the TaC coating on the surface of the carbon substrate is 15 μm, and the average thickness is 90 μm.

[0047] The preparation method of the TaC coating on the surface of the carbon substrate of this embodiment includes the following steps:

[0048] (1) Synthesis of TaC precursor: TaCl 5 Is the tantalum source, the first solvent is the mixture of acetylacetone (chelating agent) and methanol, TaCl 5 The molar ratio of acetylacetone:methanol is 1:5:80, the precursor sol is obtained by stirring at 50℃ for 12h; then the solvothermal reacti...

Example Embodiment

[0053] Example 3

[0054] A TaC coating on the surface of a carbon substrate of the present invention includes TaC formed in situ by a hybrid complex containing Ta and C and carbon of the carbon substrate, and TaC formed by decomposition of the hybrid complex containing Ta and C.

[0055] In this embodiment, the hybrid complex containing Ta and C is Ta(O)C, and the carbon matrix is ​​a C / C composite material.

[0056] In this embodiment, the average grain size of the TaC coating is 10 μm and the average thickness is 40 μm.

[0057] The preparation method of the TaC coating on the surface of the carbon substrate in this embodiment is basically the same as that in Embodiment 1, except that the carbon substrate in this embodiment is a C / C composite material.

[0058] The TaC coating prepared in this embodiment has golden metallic luster, good TaC crystallinity, no other impurity phases, no preferential orientation, and the average thickness of the coating is 40μm. The TaC coating and the c...

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Abstract

The invention discloses a carbon substrate surface TaC coating layer and a preparation method thereof. The carbon substrate surface TaC coating layer comprises TaC generated by in-situ reaction of a hybrid complex of Ta and C and carbon of a carbon substrate, and TaC generated by decomposition of the hybrid complex of Ta and C. The preparation method comprises the following steps of (1) synthesizing a TaC precursor; (2) preparing TaC precursor paste; and (3) performing high-temperature segmented thermal processing. The carbon substrate surface TaC coating layer has the advantages of high bonding strength with the substrate, high crystallinity, uniformity, compactness, corrosion resistance, remarkable thermal stability and the like. The preparation method is simple in requirement on a process device, short in period and low in cost and has wide adaptability.

Description

technical field [0001] The invention belongs to the field of production and preparation of crystals and semiconductors, and relates to a high-performance coating on the surface of carbon materials used in crystals and semiconductor production and a preparation method thereof, in particular to a TaC coating on the surface of a carbon matrix and a preparation method thereof. Background technique [0002] In the field of crystal and semiconductor production, it is widely used at home and abroad to coat SiC and BN protective layers on crystal growth carriers such as graphite bases, crucibles, or corrosive gas channels such as guide tubes to prevent the source of C impurities during crystal growth. The introduction of graphite and the avoidance of corrosion of graphite by corrosive gases in high temperature environments. However, for the production of new semiconductors with harsher and harsher environments, such as the preparation of the third main group nitride epitaxial wafer ...

Claims

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Application Information

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IPC IPC(8): H01L21/02C04B35/56
CPCH01L21/02183C04B35/56C04B35/5607H01L21/02225
Inventor 王松沈小松李伟蒋进明张健
Owner NAT UNIV OF DEFENSE TECH
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