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LED epitaxial structure with 3D layer and capable of improving brightness

An epitaxial structure and brightness band technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing radiation recombination probability, reducing radiation recombination efficiency, LED chip breakdown, etc., to increase radiation recombination efficiency and improve crystal quality. , The effect of improving the brightness of the chip

Inactive Publication Date: 2017-01-04
NANTONG TONGFANG SEMICON +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] One of the main problems is that In x Ga 1-x Reduced radiative recombination efficiency due to stress field induced by lattice mismatch in N / GaN multiple quantum wells
In x Ga 1-x The stress field caused by lattice mismatch in N / GaN multi-quantum well MQWs makes the energy bands in MQWs tilt, causing the wave functions of electrons and holes to separate in space (quantum confinement Stark effect), thereby reducing the probability of radiative recombination. lead to low brightness
At the same time, these stress fields will cause the LED chip to be easily broken down due to electrostatic action, that is, ESD deterioration

Method used

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  • LED epitaxial structure with 3D layer and capable of improving brightness

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Embodiment 1

[0015] The preparation method of the epitaxial structure of the present invention is carried out in the metal-organic chemical vapor deposition MOCVD reaction chamber:

[0016] First, the sapphire substrate 1 is annealed in a hydrogen atmosphere for 1 min, the surface of the substrate is cleaned, the temperature is controlled between 1060°C, and then nitriding treatment is performed;

[0017] Lower the temperature of the reaction chamber to 500°C to grow a 20nm-thick AlN buffer layer 2 grown at low temperature. During the growth process, the growth pressure is 75 mbar;

[0018] After the growth of the AlN buffer layer 2 grown at low temperature is completed, it is annealed in situ, the annealing temperature is between 1000° C., and the time is between 4 minutes;

[0019] After annealing, raise the temperature to 1100°C, raise the pressure to 800mbar, and inject an appropriate amount of SiH 4 Do n-doping, Si concentration is 2E+17atom / cm 3­ atom / cm 3 , the growth ti...

Embodiment 2

[0029] The preparation method of the epitaxial structure of the present invention is carried out in the metal-organic chemical vapor deposition MOCVD reaction chamber:

[0030] First, the sapphire substrate 1 is annealed in a hydrogen atmosphere for 15 minutes, the surface of the substrate is cleaned, the temperature is controlled at 1080 °C, and then nitriding is performed;

[0031] Lower the temperature of the reaction chamber to 650 °C, and grow a 30 nm-thick AlN buffer layer 2 grown at low temperature. During the growth process, the growth pressure is 75 mbar;

[0032] After the growth of the AlN buffer layer 2 grown at low temperature is completed, it is annealed in situ, the annealing temperature is 1100 ℃, and the time is 5 minutes;

[0033] After annealing, raise the temperature to 1110 °C, the pressure to 800 mbar, and feed SiH in an appropriate amount 4 For n doping, the Si concentration is 3.5E+17 atom / cm 3 , the growth time is 20 min, the T trimethyl flow...

Embodiment 3

[0043] The preparation method of the epitaxial structure of the present invention is carried out in the metal-organic chemical vapor deposition MOCVD reaction chamber:

[0044] First, the sapphire substrate 1 is annealed in a hydrogen atmosphere for 15 minutes, the surface of the substrate is cleaned, the temperature is controlled between 1100°C, and then nitriding treatment is performed;

[0045] Lower the temperature of the reaction chamber to 700°C to grow a 40nm-thick AlN buffer layer 2 grown at a low temperature. During the growth process, the growth pressure is 75 mbar;

[0046] After the growth of the AlN buffer layer 2 grown at low temperature is completed, it is annealed in situ, the annealing temperature is between 1200 ° C, and the time is between 10 min;

[0047] After annealing, raise the temperature to 1160°C, raise the pressure to 800mbar, and inject an appropriate amount of SiH 4 For n-doping, the Si concentration is 5E+17atom / cm 3 , the growth time i...

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Abstract

The invention discloses an LED epitaxial structure with a 3D layer and capable of improving brightness, relating to the LED epitaxial structure of the light emitting diode. The LED epitaxial structure with a 3D layer and is capable of improving brightness successively comprises, from the bottom to the top, a sapphire substrate, an AlN buffering layer, a u-GaN layer, an n-AlGaN layer, an n-GaN layer, a multi-quantum well layer, an electronic barrier layer, a p-GaN layer and a metal contact layer. The LED epitaxial structure is characterized in that a high-temperature high-voltage n-doped 3D layer is arranged between the AlN buffering layer and the u-GaN layer, and SiH4 is introduced during a growth process of the 3D layer to perform n doping. Compared with the prior, the LED epitaxial structure with the 3D layer can effectively reduce dislocation density, improves crystalline quality and improves brightness of the light emitting diode.

Description

technical field [0001] The invention relates to the technical field of epitaxy of light-emitting diodes, in particular to an LED epitaxy structure with a 3D layer that can improve brightness. Background technique [0002] Semiconductor LEDs have the advantages of small size, low power consumption, long service life, environmental protection, and durability, and are widely used in lighting, display screens, and backlight sources. High-power light-emitting diodes have been made into solid-state lighting sources and put on the market. They are a new type of light source that will replace traditional lighting in the future. Compared with traditional semiconductor materials such as Si, GaAs, and InP, GaN materials have the characteristics of wide bandgap, high breakdown field strength, high electron saturation and velocity, and are therefore known as the representative of the third-generation semiconductor materials. The output power density of GaN HEMT is more than an order of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/12
CPCH01L33/06H01L33/12
Inventor 翟小林程腾胥真奇林政治赖志豪曾颀尧
Owner NANTONG TONGFANG SEMICON
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