Novel AlGaN-based ultraviolet light emitting diode

Abstract

The invention relates to the technical field of a semiconductor photoelectronic device, in particular to a novel AlGaN-based ultraviolet light emitting diode. The novel AlGaN-based ultraviolet light-emitting diode comprises a tube body, wherein a sapphire substrate, a AlN nucleating layer, a non-doped u-type Al<x1>In<y1>Ga<1-x1-y1>N buffer layer, an n-type Al<x2>In<y2>Ga<1-x2-y2>N layer, a Al<x3>In<y3>Ga<1-x3-y3>N/Al<x4>In<y4>Ga<1-x4-y4>N quantum well active region, a p-type NiO/Al<x5>In<y5>Ga<1-x5-y5>N superlattice structure electron blocking layer, a p-type Zn<z1>Mg<z2>Ni<1-z1-z2>O layer and an indium tin oxide transparent conductive layer are sequentially arranged in the tube body from bottom to top, a p-type ohmic electrode is led out of the indium tin oxide transparent conductive layer, and an n-type ohmic electrode is led out of the n-type Al<x2>In<y2>Ga<1-x2-y2>N layer. In the novel AlGaN-based ultraviolet light emitting diode, the forbidden bandwidth and the lattice constant can be independently adjusted by the AlInGaN material, the crystal quality of an epitaxial layer is effectively improved, the p-type NiO/Al<x5>In<y5>Ga<1-x5-y5>N superlattice structure has a high quantum limitation effect on a carrier, the p-type Zn<y2>Mg<y2>Ni<1-y2-y2>O is used for improving the combination efficiency of the carrier in the active region, the sapphire substrate material on a r surface, an m surface or an a surface is a non-polarity or semi-polarity AlGaN material, the separation of electron and hole wave functions in a space is reduced, and the radiation combination efficiency of the carrier is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a novel AlGaN-based ultraviolet light-emitting diode. Background technique [0002] The ultraviolet light band ranges from 100-400nm. Compared with the visible light band, ultraviolet light photons have higher energy, stronger penetrating ability, and strong lethality to biological viruses. Therefore, ultraviolet light sources are used in the detection of biochemical harmful substances, water It has great application value in the fields of purification, high-density storage, short-wavelength security communication, and military affairs. Quaternary compound Al x In y Ga 1-x-y N(0≤x≤1, 0≤y≤1) has an energy bandgap range of 0.7-6.2eV, which can be continuously adjusted by changing the composition of Al and In, so that the wavelength range of its absorption spectrum can range from 200nm (deep Ultraviolet) to 1770nm (near infrared), it has wide applica...

AI Technical Summary

Problems solved by technology

The results show that the overflow of electrons from the active region and the inefficiency of hole injection have been confirmed to be the key factors leading to the efficiency decay under high current drive

At present, there are no reports on ultraviolet light-emitting diodes with p-type ZnMgNiO layer structure and p-type NiO / AlInGaN superlattice electron blocking layer structure and their preparation methods

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