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Vanadium oxide anode buffer layer and preparation method and application thereof

An anode buffer layer and vanadium oxide technology, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve the problems of complex organic modification process, expensive equipment, and unsuitable preparation process, so as to improve energy conversion efficiency , good compatibility, excellent interface properties

Active Publication Date: 2017-02-22
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the expensive equipment used for plasma treatment, or the relatively complicated organic modification process, it is not suitable for large-scale and low-cost preparation processes

Method used

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  • Vanadium oxide anode buffer layer and preparation method and application thereof
  • Vanadium oxide anode buffer layer and preparation method and application thereof
  • Vanadium oxide anode buffer layer and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0031] Prepare vanadium oxide film and use it as an anode buffer layer (or hole transport layer) to make organic polymer solar cells. Prepare a 1.0 mg / mL solution of vanadium acetylacetonate in isopropanol, sonicate for 8 minutes to dissolve it completely, and set aside. On the cleaned ITO conductive glass substrate, a layer of vanadium acetylacetonate thin film is prepared. Coating conditions: the spin coating speed is 2000 rpm, and the spin time is 40 seconds. The vanadium acetylacetonate thin film was annealed on a heating plate in air for 3 minutes, and the heating temperature was 150° C.

[0032] h 2 o 2 - UVO treatment of the film to obtain a vanadium oxide anode buffer layer. Treatment conditions: Coat a layer of 30vv% H on the film prepared above 2 o 2 The solution was processed at a rotation speed of 2000 rpm and a rotation time of 40 seconds. Then transfer to a UV ozone machine (power consumption: 0.5 KW), treat for 10 minutes, and cool naturally to room tempe...

Embodiment 2

[0035] Prepare a 1.5 mg / mL solution of vanadium acetylacetonate in isopropanol, sonicate for 10 minutes to dissolve it completely, and set aside. On the cleaned ITO conductive glass substrate, a layer of vanadium acetylacetonate thin film is coated. Coating conditions: the spin coating speed is 2000 rpm, and the spin time is 40 seconds. The vanadium acetylacetonate thin film was annealed on a heating plate in air for 3 minutes, and the heating temperature was 150° C.

[0036] h 2 o 2 -UVO treatment, treatment conditions: coat a layer of 30% H on the film prepared under the above conditions 2 o 2 The solution was processed at a rotation speed of 2000 rpm and a rotation time of 40 seconds. Then transfer to a UV ozone machine (power consumption: 0.5 KW), treat for 10 minutes, and naturally cool to room temperature to obtain a vanadium oxide anode buffer layer; coat a layer of PTB7- th:PC 71 BM (the mass ratio of the two is 1:1.5) photosensitive layer. Coating condition: P...

Embodiment 3

[0039] Prepare a 2.0 mg / mL solution of vanadium acetylacetonate in isopropanol, sonicate for 10 minutes to dissolve it completely, and set aside. On the cleaned ITO conductive glass substrate, a layer of vanadium acetylacetonate thin film is coated. Coating conditions: the spin coating speed is 2000 rpm, and the spin time is 40 seconds. The vanadium acetylacetonate thin film was annealed on a heating plate in air for 3 minutes, and the heating temperature was 150° C.

[0040] h 2 o 2 -UVO treatment, treatment conditions: coat a layer of 30% H on the film prepared under the above conditions 2 o 2 The solution was rotated at 2000 rpm for 40 seconds. Then transfer to an ultraviolet ozone machine (power consumption: 0.5 KW), treat for 10 minutes, and cool down to room temperature naturally to obtain a vanadium oxide anode buffer layer. Coating a layer of PTB7-th:PC with a thickness of about 80 nm on the ITO / vanadium oxide film 71 BM (the mass ratio of the two is 1:1.5) phot...

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Abstract

The invention belongs to the field of a photovoltaic material and discloses a vanadium oxide anode buffer layer and a preparation method and application thereof. The method is characterized by adopting a vanadium acetylacetonate isopropyl alcohol solution as a precursor; then, preparing a thin film on an anode substrate through methods of spin coating, blade coating and jet printing and the like; and after short-time heat annealing treatment, carrying out processing through an H2O2-ultraviolet ozone (UVO) method to form the anadium oxide anode buffer layer. The provided vanadium oxide anode buffer layer has an excellent light-transmission property, and interface property and stability thereof are superior to those of a conventional PEDOT:PSS anode buffer layer, so that the vanadium oxide anode buffer layer can be used for preparing an efficient and stable organic solar cell.

Description

technical field [0001] The invention belongs to the field of photovoltaic materials, and relates to an anode buffer layer material of an organic solar cell, in particular to a vanadium oxide anode buffer layer and a preparation method and application thereof. Background technique [0002] Although the photoelectric conversion efficiency of organic solar cells is still lower than that of silicon-based solar cells, it has become a research hotspot in the field of new energy in recent years because of its advantages of light weight, low cost, solution processing and low temperature processing. The anode buffer layer is a key part of organic solar cells, located between the anode and the photoactive layer. Its main function is to (1) inhibit the quenching of photogenerated excitons at the anode / organic layer interface; (2) reduce the transport barrier of photogenerated holes from the photoactive layer to the anode, and improve the hole transport efficiency. Therefore, the selec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/00H10K30/30H10K2102/00Y02E10/549
Inventor 冯莱韩东蔚周东营孙兵兵
Owner SUZHOU UNIV
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