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A kind of vanadium oxide anode buffer layer and its preparation method and application

An anode buffer layer and vanadium oxide technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complex organic modification process, inapplicable preparation process, expensive equipment, etc., to improve energy conversion efficiency , good compatibility, excellent interface properties

Active Publication Date: 2019-05-07
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the expensive equipment used for plasma treatment, or the relatively complicated organic modification process, it is not suitable for large-scale and low-cost preparation processes

Method used

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  • A kind of vanadium oxide anode buffer layer and its preparation method and application
  • A kind of vanadium oxide anode buffer layer and its preparation method and application
  • A kind of vanadium oxide anode buffer layer and its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0031] Prepare vanadium oxide film and use it as an anode buffer layer (or hole transport layer) to make organic polymer solar cells. Prepare a 1.0 mg / mL solution of vanadium acetylacetonate in isopropanol, sonicate for 8 minutes to dissolve it completely, and set aside. On the cleaned ITO conductive glass substrate, a layer of vanadium acetylacetonate thin film is prepared. Coating conditions: the spin coating speed is 2000 rpm, and the spin time is 40 seconds. The vanadium acetylacetonate thin film was annealed on a heating plate in air for 3 minutes, and the heating temperature was 150° C.

[0032] h 2 o 2 - UVO treatment of the film to obtain a vanadium oxide anode buffer layer. Treatment conditions: Coat a layer of 30vv% H on the film prepared above 2 o 2 The solution was processed at a rotation speed of 2000 rpm and a rotation time of 40 seconds. Then transfer to a UV ozone machine (power consumption: 0.5 KW), treat for 10 minutes, and cool naturally to room tempe...

Embodiment 2

[0035] Prepare a 1.5 mg / mL solution of vanadium acetylacetonate in isopropanol, sonicate for 10 minutes to dissolve it completely, and set aside. On the cleaned ITO conductive glass substrate, a layer of vanadium acetylacetonate thin film is coated. Coating conditions: the spin coating speed is 2000 rpm, and the spin time is 40 seconds. The vanadium acetylacetonate thin film was annealed on a heating plate in air for 3 minutes, and the heating temperature was 150° C.

[0036] h 2 o 2 -UVO treatment, treatment conditions: coat a layer of 30% H on the film prepared under the above conditions 2 o 2 The solution was processed at a rotation speed of 2000 rpm and a rotation time of 40 seconds. Then transfer to a UV ozone machine (power consumption: 0.5 KW), treat for 10 minutes, and naturally cool to room temperature to obtain a vanadium oxide anode buffer layer; coat a layer of PTB7- th:PC 71 BM (the mass ratio of the two is 1:1.5) photosensitive layer. Coating condition: P...

Embodiment 3

[0039] Prepare a 2.0 mg / mL solution of vanadium acetylacetonate in isopropanol, sonicate for 10 minutes to dissolve it completely, and set aside. On the cleaned ITO conductive glass substrate, a layer of vanadium acetylacetonate thin film is coated. Coating conditions: the spin coating speed is 2000 rpm, and the spin time is 40 seconds. The vanadium acetylacetonate thin film was annealed on a heating plate in air for 3 minutes, and the heating temperature was 150° C.

[0040] h 2 o 2 -UVO treatment, treatment conditions: coat a layer of 30% H on the film prepared under the above conditions 2 o 2 The solution was rotated at 2000 rpm for 40 seconds. Then transfer to an ultraviolet ozone machine (power consumption: 0.5 KW), treat for 10 minutes, and cool down to room temperature naturally to obtain a vanadium oxide anode buffer layer. Coating a layer of PTB7-th:PC with a thickness of about 80 nm on the ITO / vanadium oxide film 71 BM (the mass ratio of the two is 1:1.5) phot...

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Abstract

The invention belongs to the field of photovoltaic materials, and discloses a vanadium oxide anode buffer layer and its preparation method and application; the isopropanol solution of vanadium acetylacetonate is used as a precursor, and the anode is coated by methods such as spin coating, scraping coating, and spray printing. A thin film is formed on the substrate, and after a short-term heating and annealing treatment, the H 2 o 2 ‑Ultraviolet Ozone (UVO) treatment to form a vanadium oxide anode buffer layer. The vanadium oxide anode buffer layer provided by the invention has excellent light-transmitting properties, and its interface properties and stability are superior to traditional PEDOT:PSS anode buffer layers, so it can be used to prepare efficient and stable organic solar cells.

Description

technical field [0001] The invention belongs to the field of photovoltaic materials, and relates to an anode buffer layer material of an organic solar cell, in particular to a vanadium oxide anode buffer layer and a preparation method and application thereof. Background technique [0002] Although the photoelectric conversion efficiency of organic solar cells is still lower than that of silicon-based solar cells, it has become a research hotspot in the field of new energy in recent years because of its advantages of light weight, low cost, solution processing and low temperature processing. The anode buffer layer is a key part of organic solar cells, located between the anode and the photoactive layer. Its main function is to (1) inhibit the quenching of photogenerated excitons at the anode / organic layer interface; (2) reduce the transport barrier of photogenerated holes from the photoactive layer to the anode, and improve the hole transport efficiency. Therefore, the selec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/00H10K30/30H10K2102/00Y02E10/549
Inventor 冯莱韩东蔚周东营孙兵兵
Owner SUZHOU UNIV
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