A kind of double-layer perovskite light-emitting diode and its preparation method
A technology of light-emitting diodes and double-layer perovskite, which is applied in semiconductor/solid-state device manufacturing, electrical components, and electric solid-state devices, etc., can solve problems such as energy waste, heat loss, and unfavorable electron transmission, so as to improve luminous efficiency and reduce Open voltage, good stability effect
Active Publication Date: 2018-07-31
SUZHOU UNIV
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Problems solved by technology
However, due to the high potential barrier formed between the semiconductor electron transport layer and the perovskite used in the conventional device structure, it is not conducive to the transmission of electrons, and the perovskite light-emitting diode usually has a relatively high turn-on voltage (greater than 3V), so The high turn-on voltage will cause waste of energy and heat loss
Method used
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Embodiment 1
[0042] CH 3 NH 3 PbBr 3 The precursor solution was diluted to a mass ratio of 1.25% to obtain a green light-emitting perovskite solution, and the photoluminescence spectrum of the prepared light-emitting diode was as follows: image 3 as shown in a.
Embodiment 2
[0044] The CH with a mass ratio of 2.5% 3 NH 3 PB 3 and CH at a mass ratio of 1.25% 3 NH 3 PbBr 3 The perovskite precursor solutions of two different systems were mixed according to the molar ratio of 0.3:2.7 to obtain a yellow-emitting perovskite solution. The photoluminescence spectrum of the prepared light-emitting diode was as follows: image 3 as shown in b.
Embodiment 3
[0046] The CH with a mass ratio of 2.5% 3 NH 3 PB 3 and CH at a mass ratio of 1.2% 3 NH 3 PbBr 3 The perovskite precursor solutions of two different systems are mixed according to the molar ratio of 1.05:1.95 to obtain a red-emitting perovskite solution. The photoluminescence spectrum of the prepared light-emitting diode is as follows: image 3 as shown in c.
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The invention relates to a double-layer perovskite light-emitting diode and a preparation method thereof. The double-layer perovskite light-emitting diode respectively includes: ITO conductive glass as an anode, and a layer of poly-3,4-ethylene with a thickness of about 20 nm is spin-coated. Dioxythiophene-polystyrene sulfonic acid (PEDOT:PSS) is used as the hole transport layer; the double-layer perovskite light-emitting layer is prepared by the spin coating method twice, and the perovskite light-emitting layer used can be of different halogen ratios. Perovskite; spin-coat a layer of calcium-doped zinc oxide (Ca:ZnO) with a thickness of about 50nm on the perovskite layer as the electron transport layer; finally evaporate metal calcium and aluminum as the cathode. On the one hand, the present invention obtains an optimal band gap by regulating the concentration of Ca in Ca:ZnO, reduces the potential barrier between the electron transport layer and the perovskite, thereby reduces the turn-on voltage of the light-emitting diode, and at the same time improves the luminescence of the light-emitting diode Efficiency and internal quantum efficiency; on the other hand, by adjusting the ratio of halogen in perovskite, different colors of light can be achieved.
Description
technical field [0001] The invention belongs to the field of electroluminescent devices, in particular to a double-layer perovskite light-emitting diode and a preparation method thereof. Background technique [0002] Metal halide perovskite materials can be expressed by the chemical formula MAPbX 3 to represent, where X is Br, I, and / or Cl, this type of material has excellent photoelectric properties and can be applied to photoelectric devices such as solar cells, photodetectors, and light-emitting diodes. Perovskite-based light-emitting diodes have the characteristics of high luminous purity, high emission efficiency and low excitation energy, so they may become new light-emitting materials that replace inorganic quantum dots and traditional organic light-emitting materials. However, due to the high potential barrier formed between the semiconductor electron transport layer and the perovskite used in the conventional device structure, it is not conducive to the transmissio...
Claims
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IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/00H10K50/11H10K50/80H10K50/805H10K71/00
Inventor 鲍桥梁卡西木李绍娟李鹏飞
Owner SUZHOU UNIV