Metal etching solution and etching method for copper/molybdenum film
A technology of metal etching and film layer, which is applied in the field of metal etching solution, can solve the problems of high cost, complex composition, high cost of raw materials, etc., and achieve the effect of wide application range, simple composition and good uniformity
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[0033] Example 3
[0034] This embodiment provides an etching method for the copper / molybdenum film layer in the metal etching solution described in the foregoing embodiments 1 and 2, that is, the copper / molybdenum film layer is in liquid contact with the metal etching solution.
[0035] Specifically, the device with the copper / molybdenum film layer is brought into contact with the metal etching solution, for example, the device with the copper / molybdenum film layer can be immersed in the metal etching solution.
[0036] The above-mentioned etching process is preferably performed at 30°C to 35°C.
[0037] Reference figure 1 The device includes a substrate 1, and a barrier film 21, a copper wiring 22, and a resist layer 3 are sequentially stacked on the substrate 1. The combination of the barrier film 21 and the wiring 22 is the copper described in the embodiment of the present invention. / Molybdenum film layer.
[0038] It is worth noting that a good metal etching solution should make...
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