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Synthetic method of ZnO/WO3 heterojunction arrays

A synthesis method and heterojunction technology, applied in chemical instruments and methods, metal/metal oxide/metal hydroxide catalysts, chemical/physical processes, etc., can solve problems such as performance impact, improve efficiency, and broaden capture Range, the effect of improving separation efficiency

Active Publication Date: 2017-03-22
HENAN NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The patent with the publication number CN103071482A discloses a method for preparing ZnO / WO by ball milling 3 Powder method, the ZnO / WO prepared by this method 3 Compared with ZnO, the photocatalytic activity of powder is improved, but ZnO / WO 3 When the powder is used as a photoelectrode, due to the existence of a large number of grain boundaries, the recombination efficiency of photogenerated charges is improved, and the performance of the photoelectrode for photoelectrochemical water splitting will be affected.

Method used

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  • Synthetic method of ZnO/WO3 heterojunction arrays
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Examples

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Embodiment 1

[0016] (1) Add 6.585g zinc acetate to 100mL ethanol solution and stir for 2h, then add 3mL diethanolamine and continue stirring for 2h to obtain a precursor solution, soak the conductive glass (FTO) in the precursor solution for 30min, and get covered ZnO seed crystals the FTO;

[0017] (2) Add 0.5488g of zinc acetate and 0.0517g of polyethyleneimine to 100mL of deionized water and stir in an ice bath for 30min, then add 0.3505g of cyclohexamethylenetetramine and continue stirring for 30min, and finally the step (1) is obtained The FTO covered with ZnO seed crystals was placed in the above solution, heated in an oil bath at 80 °C for 10 h, cooled naturally to room temperature, taken out and cleaned, dried naturally, and then placed in a muffle furnace and annealed at 500 °C for 2 h to obtain growth organic FTO of ZnO nanorod arrays;

[0018] (3) Add 0.25g ammonium paratungstate to 25mL acetic acid and water mixed solution with a volume ratio of 1:1, stir for 10min, then add 0...

Embodiment 2

[0021] (1) Add 6.585g zinc acetate to 100mL ethanol solution and stir for 2h, then add 3mL diethanolamine and continue stirring for 2h to obtain a precursor solution, soak FTO in the precursor solution for 30min to obtain FTO with ZnO seeds;

[0022] (2) Add 0.5488g of zinc acetate and 0.0517g of polyethyleneimine to 100mL of deionized water and stir in an ice bath for 30min, then add 0.3505g of cyclohexamethylenetetramine and continue stirring for 30min, and finally the step (1) is obtained The FTO with ZnO seed crystals was placed in the above solution and heated in an oil bath at 95°C for 5h, cooled naturally to room temperature, the sample was taken out, cleaned and dried naturally, then placed in a muffle furnace and calcined at 500°C for 2h to obtain a ZnO FTO of nanorod arrays;

[0023] (3) Add 0.25g of ammonium paratungstate to 25mL of acetic acid and water mixed solution with a volume ratio of 1:2, stir for 10min, then add 0.5mL of concentrated hydrochloric acid solut...

Embodiment 3

[0025] (1) Add 6.585g of zinc acetate to 100mL ethanol solution and stir for 2h, then add 3mL diethanolamine and continue stirring for 2h to obtain a precursor solution, soak FTO in the precursor solution for 30min to obtain FTO with ZnO seeds;

[0026] (2) Add 0.5488g of zinc acetate and 0.0517g of polyethyleneimine to 100mL of deionized water and stir in an ice bath for 30min, then add 0.3505g of cyclohexamethylenetetramine and continue stirring for 30min, and finally the step (1) is obtained The FTO with ZnO seed crystals was placed in the above solution and heated in an oil bath at 110°C for 1h, cooled naturally to room temperature, the sample was taken out, cleaned and dried naturally, then placed in a muffle furnace and calcined at 500°C for 2h to obtain a ZnO FTO of nanorod arrays;

[0027] (3) Add 0.25g of ammonium paratungstate to 25mL of a mixed solution of acetic acid and water with a volume ratio of 2:1, stir for 10min, then add 0.5mL of concentrated hydrochloric a...

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Abstract

The invention discloses a synthetic method of ZnO / WO3 heterojunction arrays. The synthetic method comprises the specific steps that 1, ZnO crystal seeds grow on an FTO substrate; 2, the FTO covered with the ZnO crystal seeds is placed into a container containing a mixed water solution of zinc acetate, polyethyleneimine and methenamine, and an oil bath heating reaction is carried out to obtain an FTO on which ZnO nanometer bar arrays grow; and 3, the FTO on which the ZnO nanometer bar arrays grow is placed into a hydrothermal reaction kettle containing an ethyl alcohol-water mixed solution of ammonium paratungstate, a concentrated hydrochloric acid solution and hydrogen peroxide, and a hydrothermal reaction is carried out to prepare the ZnO / WO3 heterojunction arrays. The synthetic method is simple in technology, environmentally friendly and beneficial for mass production.

Description

technical field [0001] The invention belongs to the technical field of synthesis of composite nanomaterials, in particular to a ZnO / WO 3 Synthetic methods of heterojunction arrays. Background technique [0002] Energy and environmental issues are currently important bottlenecks restricting the development of society and technology. Therefore, the development of new energy materials based on semiconductor nanomaterials has attracted widespread attention from researchers. e.g. TiO 2 、WO 3 , ZnO and SnO 2 A variety of semiconductor materials such as solar cells and photocatalysis are used in photoelectric conversion electronic devices such as solar cells to realize the conversion of solar energy to electrical energy and chemical energy, which has far-reaching theoretical and practical significance for solving the shortage of traditional fossil energy and environmental problems. [0003] ZnO is cheap, has a wide range of raw material sources, and has high electron mobility. ...

Claims

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Application Information

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IPC IPC(8): B01J23/30
CPCB01J23/30B01J35/39
Inventor 徐芳梅晶晶陈会敏武大鹏蒋凯高志永
Owner HENAN NORMAL UNIV
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