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A kind of preparation method of manganese bismuth permanent magnet alloy film with high saturation magnetization

A high-strength manganese-bismuth, permanent magnet alloy technology, applied in metal material coating process, vacuum evaporation coating, coating, etc., can solve the problems affecting the saturation magnetization, difficult to single-phase MnBi, etc., to achieve the solution of saturation magnetization The effect of low and broad application prospects

Active Publication Date: 2019-04-09
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since Mn atoms are easily segregated from the MnBi liquid phase when the peritectic reaction occurs in the MnBi alloy at 719K, it is difficult to obtain pure single-phase MnBi, which directly affects its saturation magnetization.

Method used

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  • A kind of preparation method of manganese bismuth permanent magnet alloy film with high saturation magnetization
  • A kind of preparation method of manganese bismuth permanent magnet alloy film with high saturation magnetization
  • A kind of preparation method of manganese bismuth permanent magnet alloy film with high saturation magnetization

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Experimental program
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Effect test

Embodiment 1

[0023] 1) Ingredients: According to the nominal composition Mn 45 Bi 55 , Using Mn and Bi alloys with a purity of 99.99% or more for weighing ingredients;

[0024] 2) Melting: using arc smelting method to put the prepared raw materials into an arc melting furnace under the protection of argon, and smelting to obtain Mn 45 Bi 55 Alloy ingot

[0025] 3) Heat treatment of the ingot; vacuum annealing the ingot, the annealing temperature is 340℃, and the annealing time is 24h;

[0026] 4) Coating: Using the electron beam evaporation deposition method, using the heat-treated ingot as the target and the silicon wafer as the substrate, sequentially deposit 5min of tantalum buffer layer, 10min of manganese-bismuth alloy layer, and 5min of tantalum anti-oxidation layer;

[0027] 5) Measurement: A superconducting quantum interferometer (SQUID) is used to measure the hysteresis loop of the film sample.

Embodiment 2

[0029] 1) Ingredients: According to the nominal composition Mn 55 Bi 45 , Using Mn and Bi alloys with a purity of 99.99% or more for weighing ingredients;

[0030] 2) Melting: using arc smelting method to put the prepared raw materials into an arc melting furnace under the protection of argon, and smelting to obtain Mn 55 Bi 45 Alloy ingot

[0031] 3) Heat treatment of the ingot; vacuum annealing the ingot, the annealing temperature is 360℃, and the annealing time is 12h;

[0032] 4) Coating: using electron beam evaporation deposition method, using the heat-treated ingot as the target and silicon wafer as the substrate, sequentially deposit 5min of tantalum buffer layer, 20min of manganese-bismuth alloy layer, and 5min of tantalum anti-oxidation layer;

[0033] 5) Measurement: A superconducting quantum interferometer (SQUID) is used to measure the hysteresis loop of the film sample.

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Abstract

The invention discloses a preparation method of an Mn-Bi permanent magnet alloy film with high saturation magnetization. The preparation method comprises the following steps: 1) proportioning: carrying out proportioning by weighing Mn and Bi alloy with the purity of 99.99% or above according to the nominal component MnyBi100-y and the molar fraction y=45, 50, 55; 2) smelting: placing the proportioned raw materials into an argon-shielded arc melting furnace by using an arc melting method, and smelting the raw materials to obtain an MnyBi100-y alloy ingot; 3) heat treatment of the ingot: placing the ingot into a vacuum annealing furnace to carry out vacuum annealing heat treatment; and 4) coating: preparing an MnyBi100-y alloy film by taking the ingot subjected to heat treatment as a target, a silicon wafer as a substrate and Ta as a buffering layer and an antioxidation layer by using an electron beam evaporation-deposition method.

Description

Technical field [0001] The invention belongs to the technical field of permanent magnetic films, and in particular relates to a method for preparing a manganese-bismuth alloy film with high saturation magnetization, which has good application prospects in magnetic microelectromechanical systems (Mag-MEMS). Background technique [0002] As the most important functional material, permanent magnet materials have a wide range of applications in the national economy and science and technology fields. With the development of miniaturization and integration of electronic, mechanical, electromechanical and other equipment, the thin film of magnetic materials is the development trend. Permanent magnetic films have important and extensive application prospects in magnetic microelectromechanical systems (MEMS) and magnetic recording. Among them, magnetic MEMS is the most important application field of permanent magnetic films. MEMS is a system that uses microelectronics technology and pre...

Claims

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Application Information

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IPC IPC(8): C23C14/30C23C14/18
CPCC23C14/18C23C14/30
Inventor 吴琼葛洪良张朋越杨洋
Owner CHINA JILIANG UNIV
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