High thermal conductivity graphene composite interface material and preparing method thereof

A technology of high thermal conductivity graphite and interface materials, which is applied in the field of thermal conductivity materials, can solve problems such as difficulty in greatly improving thermal conductivity, and achieve the effects of good mechanical strength performance, improved dispersion, and good compressibility

Inactive Publication Date: 2017-04-05
ZTE CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the thermal conductivity of thermal interface materials used on a large scale is mostly below 5W / m K. Under the existing powder system and production process conditions, it is difficult to greatly improve the thermal conductivity.

Method used

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  • High thermal conductivity graphene composite interface material and preparing method thereof
  • High thermal conductivity graphene composite interface material and preparing method thereof
  • High thermal conductivity graphene composite interface material and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] 1. Prepare the first mixture

[0077] Dry methacrylate siloxane, spherical alumina powder, spherical zinc oxide powder and polyhedral boron nitride powder at 110°C for 20 minutes, then cool to room temperature;

[0078] Weigh dry vinyl polysiloxane 3g, methyl acrylate siloxane 2g, spherical aluminum oxide and spherical zinc oxide mixed powder 90g (D50=3.0-100μm, the mass ratio of spherical aluminum oxide and spherical zinc oxide 7:3), polyhedral boron nitride powder 1g (D50=0.4-1.0μm), graphene powder 0.5g (sheet structure, thickness 2-10nm, sheet length 3-50μm,) placed in a mixer , stirring at a speed of 30r / min for 60min to prepare the first mixture.

[0079] 2. Preparation of the second mixture

[0080] Mix and stir the aluminate coupling agent and polyethylene glycol 200 evenly to prepare an auxiliary agent solution with a concentration of 10g / L. Weigh 2.0g of the auxiliary agent solution and add it to the first mixture, at a speed of 60r / min Stir for 20 minutes ...

Embodiment 2

[0087] 1. Prepare the first mixture

[0088] Dry styryl polysiloxane, spherical zinc oxide powder, spherical boron nitride powder and polyhedral aluminum nitride powder at 90°C for 60 minutes, then cool to room temperature;

[0089] Take by weighing dry vinyl polysiloxane 6g, styrene-based polysiloxane 4g, the mixed powder 70g (D50=0.2-50 μ m of spherical zinc oxide and spherical boron nitride, the mass of spherical zinc oxide and spherical boron nitride The ratio is 6:4), polyhedral aluminum nitride powder 5g (D50=0.2-0.6μm), graphene powder 1g (sheet structure, thickness 2-10nm, sheet length 3-50μm,) placed in the mixer , stirring at a speed of 60r / min for 20min to prepare the first mixture.

[0090] 2. Preparation of the second mixture

[0091] Mix and stir the titanate coupling agent and polyethylene glycol 400 evenly to prepare an auxiliary agent solution with a concentration of 10g / L; weigh 0.5g of the auxiliary agent solution and add it to the first mixture, at a spee...

Embodiment 3

[0098] 1. Prepare the first mixture

[0099] Spherical alumina powder, spherical aluminum nitride powder, polyhedral alumina powder and graphene powder were dried at 100°C for 30 minutes, then cooled to room temperature;

[0100] Weigh 8g of methyl vinyl polysiloxane, 80g of dry mixed powder of spherical alumina and spherical aluminum nitride (D50=1-70μm, the mass ratio of spherical alumina and spherical aluminum nitride is 7:3), Polyhedral alumina powder 3g (D50=0.2-1.0μm), graphene powder 2g (sheet structure, thickness 2-10nm, sheet length 3-50μm,) placed in a mixer, at a speed of 45r / min The mixture was stirred for 30 minutes to obtain the first mixture.

[0101] 2. Preparation of the second mixture

[0102] Mix and stir the silane coupling agent and polyethylene glycol 200 evenly to prepare an additive solution with a concentration of 10g / L; weigh 1.0g of the additive solution and add it to the first mixture, and stir at a speed of 45r / min After 40 minutes, the second p...

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Abstract

The invention provides a high thermal conductivity graphene composite interface material. The high thermal conductivity graphene composite interface material comprises organosilicon polymer, heat conduction powder, graphene powder and an assisting agent. The heat conduction powder comprises spherical heat conduction powder and polyhedron heat conduction powder. The invention meanwhile provides a preparing method for the polyhedron high thermal conductivity graphene composite interface material. The above raw materials are mixed and calendered, and the high thermal conductivity graphene composite interface material is prepared. Through utilization of the polyhedron heat conduction powder and adding of graphene, the contact faces of the raw materials are increased, an effective heat conduction network structure is formed, accordingly, heat conduction channels are increased, the heat dissipation efficiency is improved, and accordingly the material heat conduction performance is improved. The thermal conductivity of the prepared high thermal conductivity graphene composite interface material reaches 7.5 W / m.K-9.5 W / m.K, meanwhile, through control over the adding amount of the graphene, the prepared high thermal conductivity graphene composite interface material has a certain insulating property, and the volume resistance is 1,010 omega.cm-1,013 omega.cm.

Description

technical field [0001] The invention relates to a novel high thermal conductivity graphene composite interface material and a preparation method thereof, belonging to the field of thermal conductivity materials. Background technique [0002] Heat dissipation has always been a key research task in the electronics industry, and the actual operating temperature of electronic components is one of the key factors affecting their reliability. With the development of electronic equipment towards miniaturization and high power consumption, its power consumption density gradually increases. The calorific value of electronic equipment has also increased exponentially, which also puts forward higher requirements on the heat dissipation performance of the system. [0003] The thermal interface material is the key material of the heat dissipation system, and it is the bridge connecting the heat transfer between the chip and the heat sink. According to the different fillers and producti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L83/07C08K9/06C08K9/04C08K3/22C08K3/38C08K3/04C08K3/28
Inventor 郑金桥刘伟德彭典明张航汪磊刘欣焦兰
Owner ZTE CORP
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