Preparation method of microchannel heat sink for high-heat flux heat dissipation
A high heat flux density, micro-channel technology, applied in semiconductor/solid state device manufacturing, electrical components, electrical solid state devices, etc., can solve problems such as difficulty in meeting high heat flux density heat dissipation requirements, chip thermoelectric mismatch, and circuit power rise. , to achieve the effect of good weldability and stability, good mechanical support, and large cross-sectional area
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[0015] A method for preparing a microfluidic heat sink for heat dissipation with high heat flux, comprising the following steps:
[0016] a) Material selection, select a plate with a thermal conductivity of 1.0 to 300W / m.k, and a linear expansion coefficient (TEC) that matches the linear expansion coefficient of silicon, gallium arsenide, silicon nitride, and gallium nitride;
[0017] b) Make micro-channels inside the plate, and process micro-channels with a width of 0.3-1.0mm on the plate by combined processing methods such as etching, laser cutting and mechanical stamping;
[0018] c) The three-dimensional micro-channel is formed without deformation, and the plates with the internal channel structure are combined by filling the filling material into the channel and laminated by hot pressing, and the micro-channel heat sink is formed through subsequent processing;
[0019] d) Integrate the metal frame, ceramic frame, outer leads, IC devices, sensors, and heaters on the active...
Embodiment 1
[0028] The present invention relates to very suitable for preparing thermal expansion coefficient in (4.5~7)X10 -6 / K, the power density is 10~5000w / cm 2 Heat dissipation requires an active microfluidic heat sink, the steps of which include:
[0029] a) The method of laser cutting or mechanical punching has a thickness of 0.1-2.0mm, has a stable dielectric constant, excellent mechanical strength and high temperature stability, and is compatible with silicon, gallium arsenide, silicon nitride, gallium nitride, etc. Through-holes with a diameter of 0.1-0.5 mm and micro-channels with a width of 0.3-1.0 mm are processed on green ceramics with very close thermal expansion coefficients;
[0030] b) Inject the conductor metallization paste into the through hole processed in step a through the mask plate with a thickness of 0.1-0.5 mm; fill the heterogeneous material into the micro-channel;
[0031] c) Use a precision wire mesh with a wire diameter of 12-35um and a thick film patter...
Embodiment 2
[0036] The present invention is very suitable for the preparation of thermal expansion coefficient in (5 ~ 17.6) * 10 -6 / K, the power density is 10~5000w / cm 2 Heat dissipation requires an active microfluidic heat sink, the steps of which include:
[0037] a) The method of etching, mechanical stamping or milling has a thickness of 0.1-2.0mm, has excellent mechanical properties and high temperature stability, and has a thermal expansion coefficient of (5-17.6) ×10 -6 Process microchannels with a width of 0.3-1.0mm on plates such as Al, Cu, Kovar, Cu / W and Cu / M between / K;
[0038] b) stacking the plates that have passed through step a, and forming a heat sink containing micro-channels by welding or hot pressing.
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