High voltage porcelain insulating semiconductor glaze

Abstract

The invention relates to the technical field of semiconductor glaze, and in particular relates to a high-voltage porcelain insulating semiconductor glaze. The semiconductor glaze is prepared from the following components in parts by weight: 25-35 parts of high-potassium and low-iron feldspar, 8-14 parts of mud, 4-10 parts of Dongsheng soil, 1-4 parts of calcined talc, 20-30 parts of quartz powder, 2-4 parts of barium carbonate, 12-18 parts of iron oxide red, 1-3 parts of chrome oxide green, 9-12 parts of titanium dioxide and 1-2 parts of spodumene. The semiconductor glaze is high in structure stability, fine in surface and glossy in surface, the eutectic point is reduced, and the melting efficiency is improved; and meanwhile, the combining capacity of the semiconductor glaze after being glazed is improved by adopting the Dongsheng soil and mud.

Description

technical field [0001] The invention relates to the technical field of semiconductor glazes, in particular to high-voltage porcelain insulating semiconductor glazes. Background technique [0002] Semiconductor glaze is a kind of glaze with special properties for high-voltage electromagnetic, and its surface resistivity is between that of insulator and conductor. Semiconductor glaze is usually formed by adding a certain amount of conductive metal oxide or compound to ordinary electric enamel. The formed microstructure is different from ordinary glazes. In addition to a large number of glass phases and a small amount of bubbles, semiconductor glazes also contain various forms of conductive crystals or solid solutions. These conductive phases run through the glass matrix to form an uninterrupted conductive network. [0003] The conductivity of semiconductor glaze mainly depends on the conductivity of the semiconductor crystal phase in the glaze. When the semiconductor crystal...

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Problems solved by technology

[0005] However, this solution has the following problems: 1. The content of ferric oxide in this formula is too high, which will cause the content structure of the formed semiconducting glaze to be loose, the structural stability is not high, and the smoothness of the semiconducting glaze is not enough, relatively dull, semiconducting The surface of the glaze is relatively rough; 2. Generally, compounds containing potassium or sodium ions are used as fluxes. Due to the small atomic weight of potassium or sodium elements, the chemical properties are relatively active and the stability is poor; 3. The three oxides of this formula are added to the base In the glaze, its eutectic point is high, which leads to a decrease in melting efficiency; 4. Levolomite is mostly used now, and the glazing bonding ability of semiconductor glaze is poor

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