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Manganese ion doped II-type quantum dot fluorescent material, and preparation method and application of fluorescent material

A technology of fluorescent materials and quantum dots, applied in the field of fluorescent materials, can solve the problem of low efficiency, and achieve the effects of improving quantum efficiency, long luminous life, and improving functions

Active Publication Date: 2017-05-24
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High-temperature nucleation growth and long-time annealing can reduce defects and improve the luminescence of type II excitons, but the efficiency is not high

Method used

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  • Manganese ion doped II-type quantum dot fluorescent material, and preparation method and application of fluorescent material
  • Manganese ion doped II-type quantum dot fluorescent material, and preparation method and application of fluorescent material
  • Manganese ion doped II-type quantum dot fluorescent material, and preparation method and application of fluorescent material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A specific synthesis steps of manganese-doped quantum dots CdS:Mn / ZnSe / ZnS:

[0029] (1) Preparation of high-quality nucleation-doped semiconductor quantum dots CdS:Mn: In an argon atmosphere, use 0.03g of manganese stearate and 0.045g of excess S powder to react in 12ml of octadecene solution at 260°C. To obtain the crystal nucleus MnS, first inject a small amount of 0.06g zinc stearate to cover a transition layer to facilitate the diffusion of manganese, anneal at 280°C for 10-20 minutes, and then inject about 0.25-0.5g of stearin at about 230°C The thicker CdS shell material is coated with cadmium acid, and annealed for about 15-30 minutes; the obtained quantum dots are purified and dissolved in a small amount of octadecene as the crystal nucleus for the next shell coating;

[0030] (2) Preparation of doped semiconductor quantum dots CdS:Mn coated ZnSe / ZnS shell: In an argon atmosphere, the Zn precursor ZnO (2.5mmol), oleic acid OA (12.5mmol) and tri-n-octylphosphine...

Embodiment 2

[0034] According to the method in Example 1, a manganese-doped quantum dot CdS:Mn / ZnSe / ZnS fluorescent material with slightly smaller core size (diameter ~ 3.5nm) was prepared.

[0035] The obtained fluorescent material was detected according to the detection method of Example 1, and the results showed that the type II luminescence peak position was blue-shifted, which was significantly stronger than that of non-doped type II quantum dots synthesized by a similar method.

Embodiment 3

[0037] According to the method of Example 1, a manganese-doped quantum dot CdS:Mn / ZnSe / ZnS fluorescent material with a slightly larger-sized core (diameter ~ 4.5 nm) was prepared.

[0038] The obtained fluorescent material was detected according to the detection method in Example 1, and the result showed that the type II luminescence peak position was red-shifted, which was significantly enhanced than that of non-doped type II quantum dots synthesized by a similar method.

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Abstract

The invention discloses a manganese ion doped II-type quantum dot fluorescent material, and a preparation method and application of the fluorescent material. The preparation method of the fluorescent material comprises the steps that Mn<2+> is doped in an inner core A of an II-type quantum dot A / B to form a manganese ion doped II-type quantum dot A:Mn / B; and then a high-quality wide band gap ZnS shell is coated to obtain the manganese ion doped II-type quantum dot (A:Mn / B / ZnS) fluorescent material. Compared with the prior art, the method introduces doped Mn<2+> into the II-type quantum dot to serve as an energy transfer station and an excitor coupler, so that the weakness of defect capturing of an II-type excitor (with low oscillator strength) is overcome, and the luminous efficiency of the II-type excitor is further improved.

Description

technical field [0001] The invention discloses a manganese ion-doped type II quantum dot fluorescent material, a preparation method and application thereof, and belongs to the technical field of fluorescent materials. Background technique [0002] One of the important characteristics of type II semiconductor quantum dots is that the electrons and holes of type II excitons have better spatial separation, their oscillator strength is weak, the radiation rate is small, and they are easily affected by non-radiative defects, so they have a lower Fluorescence quantum efficiency. High-temperature nucleation growth and long-time annealing can reduce defects and improve the luminescence of type II excitons, but the efficiency is not high. Contents of the invention [0003] Purpose of the invention: Aiming at the above technical problems, the present invention provides a manganese ion-doped type II quantum dot fluorescent material and its preparation method and application. [000...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/02G01N21/64H01L31/04
CPCY02E10/50C09K11/883C09K11/025G01N21/6486H01L31/04
Inventor 张家雨许瑞林
Owner SOUTHEAST UNIV