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Preparation method for polysilicon wafer

A polycrystalline silicon wafer, polycrystalline silicon technology, applied in the final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation and other directions, can solve the problems of short life, low conversion efficiency of polycrystalline silicon cells, etc., achieve low dislocation density, beautiful appearance, The effect of improving conversion efficiency

Inactive Publication Date: 2017-05-31
WENZHOU HAIXU SCI & TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, compared with Czochralski monocrystalline, polycrystalline silicon cells have lower conversion efficiency and shorter service life

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] The invention provides a technical solution: a method for preparing a polycrystalline silicon wafer, comprising the following steps:

[0032] A, preparation of polysilicon suede;

[0033] B. High temperature diffusion;

[0034] C, wet etching;

[0035] D. PECVD coating;

[0036] E. Screen printing;

[0037] F. Sorting test;

[0038] G. Packaging and warehousing.

Embodiment 1

[0040] The preparation process of the polysilicon textured surface in the step A comprises the following steps:

[0041] A. Put the silicon wafer into the mixed solution of hydrofluoric acid and nitric acid to etch until the surface oxide layer is completely removed;

[0042] B. Rinse the corroded silicon wafer in deionized water for 30 minutes;

[0043] C. Put the cleaned silicon chip into sodium hydroxide solution to corrode, and put it into deionized water to rinse for 30 minutes after corroding;

[0044] D. Then put the silicon chip into the mixed solution of hydrofluoric acid and hydrochloric acid for corrosion, and rinse it in deionized water for 60 minutes after corrosion;

[0045] E. Finally, dry the silicon wafer with nitrogen.

[0046] In this embodiment, the high-temperature diffusion method in step B includes the following steps:

[0047] A. Put the silicon wafer that needs to be diffused at high temperature into the diffusion furnace to slowly heat up;

[0048...

Embodiment 2

[0058] The preparation process of the polysilicon textured surface in the step A comprises the following steps:

[0059] A. Put the silicon wafer into the mixed solution of hydrofluoric acid and nitric acid to etch until the surface oxide layer is completely removed;

[0060] B. Rinse the corroded silicon wafer in deionized water for 30 minutes;

[0061] C. Put the cleaned silicon chip into sodium hydroxide solution to corrode, and put it into deionized water to rinse for 30 minutes after corroding;

[0062] D. Then put the silicon chip into the mixed solution of hydrofluoric acid and hydrochloric acid for corrosion, and rinse it in deionized water for 60 minutes after corrosion;

[0063] E. Finally, dry the silicon wafer with nitrogen.

[0064] In this embodiment, the high-temperature diffusion method in step B includes the following steps:

[0065] A. Put the silicon wafer that needs to be diffused at high temperature into the diffusion furnace to slowly heat up;

[0066...

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PUM

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Abstract

The invention discloses a preparation method for a polysilicon wafer. The preparation method comprises the following steps of A, polysilicon texture preparation; B, high-temperature diffusion; C, wet etching; D, PECVD film coating; E, silk-screen printing; F, sorting and testing; and G, packaging and warehousing. The preparation method is simple in method; and the prepared polysilicon wafer is low in dislocation density and uniform in crystal particles, so that the conversion efficiency of a solar battery can be improved.

Description

technical field [0001] The invention relates to the technical field of preparing polycrystalline silicon wafers, in particular to a method for preparing polycrystalline silicon wafers. Background technique [0002] Polysilicon ingot technology is one of the mainstream technologies for producing solar crystalline silicon materials. Wafer efficiency has become one of the most important weights in the competition in the solar industry. Polycrystalline silicon ingot has surpassed monocrystalline silicon produced by Czochralski method to a large extent because of its large amount of material, simple operation and low cost. At the same time, compared with Czochralski monocrystalline, polycrystalline silicon cells have lower conversion efficiency and shorter service life. Through the transformation and optimization of the thermal field structure of the ingot furnace, as well as the optimization of the polysilicon ingot casting process, the production of low defect density and hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02363H01L31/1804H01L31/182Y02E10/546Y02E10/547Y02P70/50
Inventor 陈德榜
Owner WENZHOU HAIXU SCI & TECH CO LTD