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High power density substrate inlaid with diamond copper and preparation method thereof

A high power density, diamond technology, applied in metal processing equipment, manufacturing tools, metal processing, etc., can solve the problems of high price, high relative density, low thermal conductivity, etc., and achieve raw material saving, low density and high thermal conductivity high effect

Active Publication Date: 2017-06-06
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problems of low thermal conductivity, high relative density and high price in current electronic packaging materials, the present invention proposes a high power density substrate embedded with diamond copper and a preparation method thereof

Method used

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  • High power density substrate inlaid with diamond copper and preparation method thereof
  • High power density substrate inlaid with diamond copper and preparation method thereof
  • High power density substrate inlaid with diamond copper and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] to combine figure 1 and figure 2 To illustrate this example, a porous diamond preform is placed at position 2 of the near-net mold, and a high-power-density substrate with 5×20 mm rectangular diamond / copper embedded in oxygen-free copper is prepared by vacuum pressure infiltration technology, and the thermal load power is applied 400W / cm 2 , The junction temperature of the chip tested by a thermal imager is 56°C, which is 8-10°C lower than the junction temperature of the oxygen-free copper substrate.

Embodiment 2

[0026] to combine figure 1 and figure 2 To illustrate this example, a porous diamond preform is placed at position 2 of the near-net mold, and a high power density substrate with 8×30mm rectangular diamond / copper embedded in oxygen-free copper is prepared by vacuum pressure infiltration technology, and the thermal load power is applied 600W / cm 2 , The junction temperature of the chip tested by a thermal imager is 63°C, which is 20-25°C lower than the junction temperature of the oxygen-free copper metal substrate.

Embodiment 3

[0028] to combine figure 1 and figure 2 To illustrate this embodiment, first add molybdenum powder to position 1 of the near-net shape mold and then sinter it into porous molybdenum, fill diamond powder at position 2 of the near-net shape mold, and sinter again to obtain a composite porous preform inlaid with diamonds, using vacuum pressure The high power density substrate of 8×30mm rectangular diamond / copper embedded in molybdenum copper was prepared by impregnation technology, and the applied thermal load power was 400W / cm 2 , The junction temperature of the chip tested by a thermal imager is 64°C, which is 18-20°C lower than the junction temperature of the molybdenum-copper metal substrate.

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Abstract

The invention provides a high power density substrate inlaid with diamond copper and a preparation method thereof. A substrate body comprises a diamond copper composite material portion, a tungsten copper and molybdenum copper alloy or an oxygen-free copper portion. The alloy portion is inlaid on the composite material or the composite material is inlaid on the alloy, and the two portions are in metallurgical bonding or welding bonding; by means of a vacuum pressure infiltration process, newly net forming can be directly performed. The substrate has heat conductivity which is higher than that of alloys such as tungsten copper alloy; the coefficient of thermal expansion is matched with that of a semiconductor material; the substrate is likely to be machined, and is better than a pure diamond copper material in machinability; the substrate is small in relative mass and moderate in price and convenient to popularize and use, and can meet the heat-dissipating demands of a high power electronic apparatus, so that the heat-dissipating problem restricting high power and miniaturized development of the electronic apparatus is solved.

Description

technical field [0001] The invention belongs to the technical field of electronic packaging, in particular to a high power density substrate embedded with diamond copper and a preparation method thereof. Background technique [0002] With the rapid development of microelectronics technology, the third-generation wide-bandgap semiconductor chips represented by GaN chips have begun to be widely used, and the control of the heat of electronic devices has become the key to their normal operation, which puts forward higher requirements for electronic packaging materials. . An ideal electronic packaging material should have high thermal conductivity, a thermal expansion coefficient that matches chips such as GaN, and certain strength and rigidity. [0003] At present, tungsten-copper and molybdenum-copper alloys are widely used in the market, and their thermal conductivity is up to 280W / mK, which can no longer meet the heat dissipation requirements of high-power chips. In additio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/10B23K1/00B23K101/36
CPCC22C1/1015C22C1/1036B23K1/00B23K2101/36C22C1/1073
Inventor 郭宏张习敏王亚宝刘铭坤
Owner GRIMAT ENG INST CO LTD
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