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Nanometer TiO2-based low-power consumption micro-nano gas sensor and preparation method thereof

A gas sensor and low power consumption technology, which is applied in the field of low power consumption micro-nano gas sensor structure and preparation, can solve the problems of easy rupture of film stress, complicated process, and reduced device yield, so as to achieve good gas response characteristics, increase The effect of large specific surface area and optimized mechanical properties

Active Publication Date: 2017-06-13
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the micro-heater composed of various layers of thin films is prone to cracking due to the complexity of the process and the stress of the film, which reduces the yield of the device.

Method used

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  • Nanometer TiO2-based low-power consumption micro-nano gas sensor and preparation method thereof
  • Nanometer TiO2-based low-power consumption micro-nano gas sensor and preparation method thereof
  • Nanometer TiO2-based low-power consumption micro-nano gas sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] (1) if Figure 4 As shown in (a), on the front and back of the Si substrate, SiO was prepared by thermal oxidation and low-pressure chemical vapor deposition, respectively. 2 -Si 3 N 4 Double-layer composite film; silicon wafer double-sided thermal oxidation 500nm SiO 2 layer, double-sided LPCVD (low pressure chemical vapor deposition) deposited 150nm Si 3 N 4 .

[0056] (2) if Figure 4 As shown in (b), on the front side SiO 2 -Si 3 N 4 On the double-layer composite film, 500nm SiO is sequentially deposited on the front side by PECVD 2 , 150nm Si 3 N 4 , Annealed at 500°C for 7h.

[0057] (3) if Figure 4 As shown in (c), on the front insulating layer, the patterns of sensitive electrodes and lead pads, heating electrodes and lead pads, temperature measuring electrodes and lead pads are obtained through uniform photolithography process, and the photoresist is positive resist EPG535.

[0058] (4) if Figure 4 As shown in (d), sputter the Cr bonding layer ...

Embodiment 2

[0069] (1) On the front and back of the Si substrate, SiO was prepared by thermal oxidation and low-pressure chemical vapor deposition, respectively. 2 -Si 3 N 4 Double-layer composite film; silicon wafer double-sided thermal oxidation 500nm SiO 2 layer, double-sided LPCVD (low pressure chemical vapor deposition) deposited 150nmSi 3 N 4 .

[0070] (2) On the front side SiO 2 -Si 3 N 4 On the double-layer composite film, 500nm SiO is sequentially deposited on the front side by PECVD 2 , 150nm Si 3 N 4 , Annealed at 600°C for 5h.

[0071] (3) On the front insulating layer, the patterns of the sensitive electrode and the lead plate, the heating electrode and the lead plate, the temperature measuring electrode and the lead plate are obtained through the uniform photolithography process, and the photoresist is positive resist EPG535.

[0072] (4) Sputter a Cr adhesive layer on the heating electrode, lead pad, sensitive electrode, and lead pad pattern, and then sputter an...

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Abstract

The invention discloses a nanometer TiO2-based low-power consumption micro-nano gas sensor and a preparation method thereof. The sensor is provided with an SiO2-Si3N4 masking layer, a silicon substrate, an SiO2-Si3N4-SiO2-Si3N4 composite insulation layer, an electrode layer and a sensitive material layer from bottom to top; by arranging a temperature measurement electrode, the temperature in the center of a chip is measured in real time; a majority of Si under the Si substrate is corroded and removed through a wet method to form an SiO2-Si3N4-SiO2-Si3N4 composite floating film structure, a heating electrode and a sensitive electrode which are spirally arranged in a central symmetry manner are arranged on the floating film; and a sensitive material is arranged on the sensitive electrode, and a TiO2 film and a Ti film are sequentially sputtered in a sensitive material region, wherein the TiO2 film is used for defining a growth region of a subsequent nanorod, and a Ti source is oxidized to form a TiO2 nanorod to prepare a sensitive layer through a hot hydrochloric acid steam method to enable the TiO2 nanorod to grow on the TiO2 film. The nanorods are bridged and connected to each other, so that the nanometer TiO2-based low-power consumption micro-nano gas sensor has a very high specific surface area and a better gas response characteristic; the mechanical performance of the floating film is optimized, heat transfer is reduced, and the temperature is accurate and controllable; and the procedure is simplified, and the generation of a parasitic electric field is prevented.

Description

technical field [0001] The invention relates to a nano-TiO-based 2 Low power consumption micro-nano gas sensor structure and preparation method. Background technique [0002] Many areas of national production and life have a wide range of requirements for the detection of gas types and concentrations. For example, the air quality in confined spaces such as homes, offices, and carriages directly affects people's comfort. If toxic and harmful gases are not detected in time, an alarm will be triggered, and even human life will be threatened. In the field of industrial production, such as petrochemical, pharmaceutical, rubber, leather, etc., especially in workplaces that produce toxic, flammable or odorous gases, it is necessary to detect, monitor and alarm various toxic gases in production. And in the field of agriculture, the level of oxygen or carbon dioxide will directly affect the growth of crops. [0003] Gas sensors are an effective means of gas detection, which can re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00G01N27/12
CPCG01N27/00G01N27/127
Inventor 王海容王梦雅王博
Owner XI AN JIAOTONG UNIV