Back structure of electron multiplying charge-coupled device (EMCCD) and production method of back structure

Abstract

The invention relates to a back structure of an electron multiplying charge-coupled device (EMCCD) and a production method of the back structure. The back structure comprises an EMCCD chip, electrode extracting regions, a photosensitive region, a storage grain region, ion implanting regions, an antireflection film and a metal shielding layer, wherein the electrode extracting regions are arranged on two sides of the back side of the EMCCD chip; bonding graphs are arranged on the electrode extracting regions at intervals; the photosensitive region and the storage grain region on the back side of the EMCCD chip are positioned between the electrode extracting regions; the ion implanting regions formed by implanting low-energy ions are separately formed inside the photosensitive region and the storage grain region; by using the antireflection film on the surface of the photosensitive region, a standing wave effect can be reduced, and reflected light rays are reduced; by using the metal shielding layer on the surface of the storage grain region, transmission of incident light on the surface of the storage grain region can be prevented. The back structure disclosed by the invention can be used for improving the photoelectric conversion efficiency of the EMCCD; meanwhile, the manufacturing cost of the device also can be reduced, and the rate of finished products is improved.

Description

technical field [0001] The invention relates to a back structure of an electron multiplying charge-coupled device and a manufacturing method thereof, belonging to the technical field of charge-coupled devices. Background technique [0002] After years of development, electron multiplying charge-coupled devices (EMCCDs) have been widely used in image scanning, industrial non-contact measurement, aerospace, astronomical remote sensing, military, medical and many other fields. Electron multiplying charge-coupled device is a large-scale integrated optoelectronic device, which has the functions of photoelectric conversion, charge storage, charge transfer, charge measurement, etc., and also has technical characteristics such as high sensitivity, high signal-to-noise ratio, high modulation transfer function, and all solid state. No matter in the technical upgrading of the traditional daytime digital imaging industry, such as X-ray digital imaging systems, various high frame rate ca...

AI Technical Summary

Problems solved by technology

However, the current domestic research on the back structure of electron multiplier charge-coupled devices is still in the research and development stage, and the cost and process have not yet been achieved to achieve a suitable balance

At present, the mainstream backside structure manufacturing method requires multi-step adjustment of process parameters during grinding and polishing, which not only results in low process efficiency but also easily leads to chip breakage, requires custom-made special fixing fixtures, and the cost is high. The graphics are single, the graphics control accuracy is relatively rough, and there are few applicable device solutions, so it is not suitable for the production of the back structure of the electron multiplying charge-coupled device.

Images