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Highly-heatproof water-soluble alkali-developable UV photosensitive anti-etching ink

A technology with high hot water resistance and alkali development, applied in ink, optics, photography, etc., can solve the problem that water-based UV ink cannot fully meet the heat resistance requirements of lead-free technology

Active Publication Date: 2017-06-16
JIANGSU KUANGSHUN PHOTOSENSITIVITY NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current water-based UV ink cannot fully meet the heat resistance requirements of the lead-free process

Method used

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  • Highly-heatproof water-soluble alkali-developable UV photosensitive anti-etching ink
  • Highly-heatproof water-soluble alkali-developable UV photosensitive anti-etching ink
  • Highly-heatproof water-soluble alkali-developable UV photosensitive anti-etching ink

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] Embodiment 1: Preparation of water-soluble photo-oligomer 1

[0082] 1) Synthesis of novolac epoxy acrylate resin: 177 parts of novolac epoxy resin (manufactured by Changchun Artificial Resin, PNE-177) and 30 parts of trimethylolpropane triacrylate were heated to 83°C to dissolve, and then slowly added dropwise A mixture of 65 parts of acrylic acid, 0.3 part of catalyst triphenylphosphine, and 0.1 part of polymerization inhibitor p-hydroxyanisole was heated to 100°C for 7 hours to obtain novolac epoxy acrylate resin;

[0083] 2) Cool the novolac epoxy acrylate prepared above to 65°C, add 0.25 parts of polymerization inhibitor and 0.1 part of catalyst, stir well, add 100 parts of maleic anhydride, heat up to 78°C, and react for 2 hours.

[0084] 3) Stop the reaction when the acid value is close to the theoretical acid value, add 0.1 part of polymerization inhibitor, lower the temperature, when the temperature drops to 45°C, slowly add 10 parts of organic amine N, N-dimet...

Embodiment 2

[0085] Embodiment 2: Preparation of water-soluble photo-oligomer 2

[0086] 1) Synthesis of novolac epoxy acrylate resin: 187 parts of novolac epoxy resin (manufactured by Changchun Artificial Resin, PNE-177) and 30 parts of trimethylolpropane triacrylate were heated to 75°C to dissolve, and then slowly added dropwise A mixture of 72 parts of acrylic acid, 0.35 parts of catalyst triphenylphosphine, and 0.12 parts of polymerization inhibitor p-hydroxyanisole was heated to 105 ° C for 7 hours to obtain novolac epoxy acrylate resin;

[0087] 2) Cool the novolac epoxy acrylate prepared above to 50°C, add 0.3 parts of polymerization inhibitor and 0.15 parts of catalyst, stir well, add 140 parts of maleic anhydride, heat up to 75°C, and react for 2.5 hours.

[0088] 3) Stop the reaction when the acid value is close to the theoretical acid value, add 0.15 parts of polymerization inhibitor, lower the temperature, when the temperature drops to 40°C, slowly add 12 parts of N,N-dimethyle...

Embodiment 3

[0089] Embodiment 3: Preparation of water-soluble photo-oligomer 3

[0090] 1) Synthesis of novolac epoxy acrylate resin: 177 parts of novolac epoxy resin (manufactured by Changchun Artificial Resin, PNE-177) and 40 parts of trimethylolpropane triacrylate were heated to 80°C to dissolve, and then slowly added dropwise A mixture of 80 parts of acrylic acid, 0.4 parts of catalyst triphenylphosphine, and 0.2 parts of polymerization inhibitor p-hydroxyanisole was heated to 100°C for 8 hours to obtain novolac epoxy acrylate resin;

[0091] 2) Cool the novolac epoxy acrylate prepared above to 55°C, add 0.35 parts of polymerization inhibitor and 0.2 parts of catalyst, stir well, add 192 parts of metaphthalic anhydride, heat up to 75°C, and react for 2 hours.

[0092] 3) When the acid value is close to the theoretical acid value, stop the reaction, add 0.15 parts of polymerization inhibitor, and lower the temperature. When the temperature drops to 50°C, slowly add 12 parts of organic ...

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Abstract

The invention discloses a highly-heatproof water-soluble alkali-developable UV photosensitive anti-etching ink. The ink comprises, by weight, 120-150 parts of an aqueous photosensitive oligomer, 8-12 parts of a photosensitive monomer, 0.8-1.2 parts of a wetting agent, 0.1-0.4 parts of a dispersant, 0.2-0.5 parts of an anti-sag agent, 2-5 parts of an antifoaming agent, 4-6 parts of a drier, 8-15 parts of an aqueous photoinitiator, 0.6-1.5 parts of a pigment, 0.6-1.2 parts of a thixotropic agent, 40-70 parts of a filler and 2-5 parts of water. All above component raw materials are mixed in proportion, and are fully stirred and uniformly mixed, the obtained mixture is ground by a three-roller grinder to make the fineness be not more than 5 [mu]m, the surface of a printed circuit board is coated with the ground mixture in a screen printing, spraying or curtain coating manner, and the mixture undergoes radiation curing by using an ultraviolet light source to form an anti-etching coating layer. The ink disclosed in the invention has photosensitivity and water solubility, and an ink film formed by the ink has good heatproof property, high hardness and good anti-electroplating performance.

Description

technical field [0001] The invention relates to the technical field of inks, in particular to a heat-resistant, water-soluble, ultraviolet curing and alkali-developing anti-etching ink for printed circuit boards. Background technique [0002] Although ultraviolet (UV) curable inks avoid the problem of volatilization of organic compounds (VOC) caused by traditional solvent-based inks, but because their components contain photosensitive reactive diluents, although they are less toxic and less polluting to the environment, However, it has a strong odor and is irritating to the skin to a certain extent, and it is difficult to completely cure during the ultraviolet curing process. The residual active diluent will increase the shrinkage rate of the coating film and cause a decrease in physical properties. Reducing the amount of reactive diluent is the current development trend in the field of UV curable inks. [0003] Water-based UV curing system combines UV curing and water-base...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/101C09D11/03C09D11/102G03F7/027G03F7/004
CPCC09D11/03C09D11/101C09D11/102G03F7/004G03F7/027
Inventor 刘伟龙朱民袁燕华安丰磊冯玉进鲁平王晓东吴来喜
Owner JIANGSU KUANGSHUN PHOTOSENSITIVITY NEW MATERIAL
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