Beta-FeSi2 nano-hexahedron particle chitosan composite material and preparation method thereof

A composite material and hexahedral technology, applied in the field of magnetic semiconductors, can solve the problems of low Curie temperature and inability to meet the application, and achieve the effect of good biocompatibility

Active Publication Date: 2017-06-20
NANJING UNIV
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the Curie temperature of the existing magnetic semiconductors is lower than room temperature. Although the III-V dilute magnetic semiconductors have realized the function of low-temperature prototype devices, the highest Curie temperature is only 200K, which cannot meet practical applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Beta-FeSi2 nano-hexahedron particle chitosan composite material and preparation method thereof
  • Beta-FeSi2 nano-hexahedron particle chitosan composite material and preparation method thereof
  • Beta-FeSi2 nano-hexahedron particle chitosan composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] A β-FeSi with enhanced room temperature ferromagnetism 2 Nano-hexahedral particle chitosan composite material and preparation method, 0.056g of anhydrous ferrous chloride powder and 1cm*1cm P-type silicon wafer are reacted at 800°C±10°C to synthesize β-FeSi 2 A film composed of nano-hexahedral particles; weigh 20 mg of carboxylated chitosan, add it to 10 ml of deionized water, and oscillate ultrasonically for 30 minutes to disperse evenly; use a pipette to draw 200 μL of carboxylated chitosan aqueous solution and drop-coat it on the hexahedral nano-particle film Surface: place the drop-coated film in a vacuum oven and dry at 20°C for 20 minutes to form a tightly bonded composite film.

[0019] figure 1 For the scanning electron microscope photo of the wrapping different content carboxylated chitosan that the present invention prepares, as can be seen, along with the increase of carboxylated chitosan content, film thickness increases, and hexahedral particle becomes fuz...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a beta-FeSi2 nano-hexahedron particle chitosan composite material and a preparation method thereof. The preparation method comprises the following steps: reacting anhydrous ferrous chloride with silicon wafers at 800+ / -10 DEG C, so as to synthesize beta-FeSi2 nano-hexahedron particles; preparing a carboxylation chitosan water solution with a mass ratio of 0.2+ / -0.03%; sucking the carboxylation chitosan water solution by virtue of a pipette, and drowpise coating the surface of a beta-FeSi2 nano-hexahedron particle film with the carboxylation chitosan water solution; putting the dropwise-coated film into a vacuum drying oven, and drying at the room temperature for 20 minutes, so as to form a tightly-combined composite film, namely the beta-FeSi2 nano-hexahedron particle chitosan composite material. The composite material has enhanced room temperature ferromagnetism and further has great potentiality in application of magnetic sensing, semiconductor spintronics, biomedical treatment and the like.

Description

technical field [0001] The present invention relates to a β-FeSi with enhanced room temperature ferromagnetism 2 The invention discloses a preparation method of nano hexahedral particle chitosan composite material, which belongs to the field of magnetic semiconductors. Background technique [0002] With the continuous development of science and technology, semiconductor and magnetic materials have been widely used. Semiconductor devices can process information quickly, and magnetic materials can store information without energy consumption by maintaining the direction of magnetization. If the material can combine semiconductor characteristics and magnetism, it can change the existing mode of semiconductor integrated circuit processing information and magnetic material disk storage information. The computer core components made of magnetic semiconductors can store data in a non-volatile manner while processing data. Even if the power is suddenly cut off, the data will not b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C08L5/08C08K7/00C08K3/34H01F1/40H01F10/193H01F41/30
CPCH01F1/40H01F10/007H01F10/193H01F41/301C08K3/34C08K7/00C08K2201/011C08L5/08
Inventor 吴淑毅单云吴兴龙沈剑沧
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap