Preparation method of porous silicon dioxide antireflection film

A technology of porous silica and anti-reflection film, applied in the direction of coating, etc., can solve the problems of particle deformation, different pore size, unsuitable for anti-reflection film formation, etc., and achieve strong adhesion, high hardness, and solar energy utilization efficiency Improved effect

Inactive Publication Date: 2017-06-27
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Most of the preparation methods of silica hollow spheres are template methods. This method has factors such as the balance between multiple phases and the functionalization of the surface of the soft and hard templates, resulting in pr

Method used

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  • Preparation method of porous silicon dioxide antireflection film

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Effect test

Embodiment 1

[0031] First, use deionized water and electronics industry cleaning agent to clean and remove the dirt on the surface of the flake or tubular glass. After washing, put it in absolute ethanol and acetone for ultrasonic treatment for 30 minutes each, and dry the cleaned glass sample;

[0032] At room temperature, add 0.0005mol cetyltrimethylammonium bromide to 50mL phosphate buffer solution, stir for 2 hours to dissolve; after heating the solution to 80°C, add 0.003mol ethyl orthosilicate and 0.003 mol of ammonia water, then continue to stir and react for 2 hours; after the reaction, the reaction solution is transferred to a dialysis bag with a molecular weight cut-off of 14000, and dialyzed in water for 48 hours to obtain solution A;

[0033] Transfer the dialyzed solution into a clean glass bottle, dry at 100°C, and then bake at 700°C in air for 2 hours to obtain silica hollow sphere powder B;

[0034] Mix the dried silica hollow spheres, 0.4mol deionized water, 0.005mol hydro...

Embodiment 2

[0038] First, use deionized water and electronics industry cleaning agent to clean and remove the dirt on the surface of the flake or tubular glass. After washing, put it in absolute ethanol and acetone for ultrasonic treatment for 30 minutes each, and dry the cleaned glass sample;

[0039] At room temperature, add 0.0006mol of cetyltrimethylammonium bromide to 50mL of phosphate buffer solution, stir for 2 hours to dissolve; after heating the solution to 80°C, add 0.012mol of ethyl orthosilicate and 0.012 mol of ammonia water, then continue to stir and react for 2 hours; after the reaction, the reaction solution is transferred to a dialysis bag with a molecular weight cut-off of 14000, and dialyzed in water for 48 hours to obtain solution A;

[0040] Transfer the dialyzed solution into a clean glass bottle, dry at 100°C, and then bake at 700°C in air for 2 hours to obtain silica hollow sphere powder B;

[0041]Mix the dried silica hollow spheres, 0.2mol deionized water, 0.005m...

Embodiment 3

[0045] First, use deionized water and electronics industry cleaning agent to clean and remove the dirt on the surface of the flake or tubular glass. After washing, put it in absolute ethanol and acetone for ultrasonic treatment for 30 minutes each, and dry the cleaned glass sample;

[0046] At room temperature, add 0.0007mol of cetyltrimethylammonium bromide to 50mL of phosphate buffer solution, stir for 2 hours to dissolve; after heating the solution to 80°C, add 0.008mol of ethyl orthosilicate and 0.008 mol of ammonia water, then continue to stir and react for 2 hours; after the reaction, the reaction solution is transferred to a dialysis bag with a molecular weight cut-off of 14000, and dialyzed in water for 48 hours to obtain solution A;

[0047] Transfer the dialyzed solution into a clean glass bottle, dry at 100°C, and then bake at 700°C in air for 2 hours to obtain silica hollow sphere powder B;

[0048] Mix the dried silica hollow spheres, 0.2mol deionized water, 0.005...

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Abstract

The invention discloses a preparation method of a porous silicon dioxide antireflection film. The preparation method comprises the following steps: (1) preparing a silicon dioxide nano hollow particle sol from ethyl orthosilicate, cetyl trimethylammonium bromide, a phosphate buffer solution and an alkali catalyst used as raw materials; (2) dialyzing the silicon dioxide nano hollow particle sol through a dialysis bag, baking, and annealing to obtain silicon dioxide hollow sphere particles; (3) preparing a colloidal solution from the silicon dioxide hollow sphere particles, ethyl orthosilicate, deionized water, an acid catalyst and anhydrous ethanol used as raw materials; and (4) performing dip coating on a clean glass substrate in the colloidal solution, and annealing to obtain the porous silicon dioxide antireflection film. The antireflection film prepared by the method is a closed-pore porous film, and simultaneously has the characteristics of high transmittance, large hardness and film adhesion and good weather resistance.

Description

technical field [0001] The invention relates to a method for preparing a porous silicon dioxide anti-reflection film, which belongs to the technical field of sol-gel coating and anti-reflection film. Background technique [0002] The sol-gel coating method uses a variety of liquid materials to be fully reacted and plated on the substrate. Its advantage is that the composition of various materials is uniform after mixing and reacting, which can ensure the uniformity of the film. It can be adjusted by adjusting the ratio of raw materials. change the properties of the film. The sol-gel coating method can also adjust the thickness and refractive index of the film, thereby changing the transmittance of the anti-reflection film. At present, the anti-reflection coating prepared by the sol-gel method on the glass substrate can increase the transmittance by 2-7%. Widely used in photovoltaic solar energy and photothermal solar energy industries. [0003] The anti-reflection coating...

Claims

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Application Information

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IPC IPC(8): C03C17/25
CPCC03C17/25C03C2217/213C03C2217/70
Inventor 杨海龄郝雷张子楠王吉宁米菁于庆河杜淼赵旭山王笑静李世杰余航刘晓鹏蒋利军
Owner GRIMAT ENG INST CO LTD
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